The invention belongs to the technical field of medical instrument manufacturing, and particularly relates to a manufacturing method of an intracranial deep
electrode device, which comprises the following steps: S1, carrying out
laser welding on a
macro /
micro electrode and a CFX
electrode wire, and carrying out
laser drilling on a PTFE outer tube; s2, mounting the
macro-
microelectrode on the PTFE outer tube, and primarily fixing the
macro-
microelectrode by using a fixing tool; s3, the CFX
electrode wire is guided through a mandrel of the corresponding size, and a line sequence is marked after the CFX electrode wire is led out; s4, a new PTFE outer
pipe is taken again and installed to be flush with the first outer
pipe through the core shaft, in this way, along with internal installation, the size of the PTFE outer
pipe is decreased, installation of 15 PTFE outer pipes is completed all the time, and final fixing of the macro electrode and the
micro electrode is completed; s5, after the macro electrode and the
micro electrode are installed, a Tip electrode is installed on the head, electrode leads are all led out and then welded to a PCB at the rear end, the problem of
electromagnetic interference isolation can be effectively solved, and the stability during brain electrode implantation is remarkably improved.