The application belongs to the technical field of
semiconductor lithography, and discloses a
mask absorption layer structure with low three-dimensional effect, which comprises a
quartz substrate, a bottom anti-reflection layer, an
absorption layer main body and a top anti-reflection layer. The bottom anti-reflection layer is deposited on the surface of the
quartz substrate. The
absorption layer main body is deposited on the side of the bottom anti-reflection layer away from the
quartz substrate. The top anti-reflection layer is deposited on the side of the absorption layer main body away from the bottom anti-reflection layer. The absorption layer main body forms a patterned groove structure required for
lithography in the XY plane. The absorption layer main body is provided with a partition modulation structure matched with the
diffraction characteristics of the patterned groove structure in the Z-axis direction perpendicular to the XY plane, which can adjust the
light field distribution of incident light and the phase of
transmitted light, eliminate multiple reflections and
phase distortion in the groove, reduce the adverse effects of
mask three-dimensional effect, improve the
lithography focusing precision and
pattern size control ability, and meet the lithography application requirements of advanced process nodes.