Method for manufacturing of optoelectronic devices based on thin-film, intermediate band materials, characterized in that it comprises, at least, the following steps:
a first stage wherein a substrate (1) is coated with a metal layer acting as electrode (2);
a second stage, whereby atop the metal layer (2) a p-type semiconductor (3) is deposited; and
a third stage, whereby the intermediate band material is processed;
and wherein such an intermediate band material comprises nanoscopic structures (4) of multinary material of the type (Cu,Ag)(Al,Ga,In)(S,Se,Te)2 embedded in a matrix (5) of a similar composition, except for the absence of, at least, one cationic species present in the nanostructure.