37results about "Sialons" patented technology

A phosphor which emits light having high brightness, serves as an excellent orange or red phosphor whose light brightness is less decreased when exposed to an excitation source contains a crystal phase having the chemical composition expressed by the general formula [1]:(1−a−b)(Ln′pMII′1−pMIII′MIV′N3).a(MIV′(3n+2) / 4NnO).b(AMIV′2N3)  [1]wherein Ln′ represents a metal element selected from the group consisting of lanthanoids, Mn, and Ti; MnII′ represents a divalent metal element except the Ln′ element; MIII′ represents a trivalent metal element; MIV′ represents a tetravalent metal element; A represents a metal element selected from the group consisting of Li, Na, and K; 0<p≦0.2; 0≦a, 0≦b, a+b>0, 0≦n, and 0.002≦(3n+2)a / 4≦0.9.

The invention provides a ss-sialon phosphor exhibiting higher luminance which is usable in vacuum fluorescent displays (VFD), field emission displays (FED), plasma display panels (PDP), cathode ray tubes (CRT), light emitting diodes (LED), and so on. A novel high-luminance ss-sialon phosphor powder having an average aspect ratio of less than 1.5 can be obtained by mixing a-silicon nitride particles having particle diameters of 2[mu]m or above and an average aspect ratio of 1.3 or below with an AlN-containing aluminum source substance and either an oxide of metal Ln or a precursor capable of being converted into the oxide through pyrolysis in such a way as to give a composition represented by the general formula: Si6-zAlzOzN8-z:Lnx (wherein 0<z<4.2 and Ln is Eu) and firing the obtained mixture in a nitrogen atmosphere under a pressure of 0.05 to 100MPa at 1700 to 2100 DEG C.

An +--sialon which is represented by general formula: (M1)x (M2) Y (Si, Al) 12 (O, N) 16 (wherein M1 represents one or more elements selected from the group which consists of Li, Mg, Ca, Y and lanthanoid (except La and Ce) and M2 represents one or more elements selected from the group which consists of Ce, Pr, Eu, Tb, Yb and Er and wherein 0.3 < X + Y < 1.5 and 0 < Y < 0.7) is synthesized by loading a container with a mixed powdery material of silicon nitride, aluminum nitride, an M1 containing compound and an M2 containing compound and at need aluminum oxide so that its bulk density is not more than 1.5 g / cm 3 , heat-treating the mixed powdery material at 1,600 to 2,000 DEG C in a nitrogen atmosphere. The +--sialon is pulverized to make an +--sialon powder, which can be utilized as a phosphor material for a while LED which uses a blue or an ultraviolet LED as its light source.

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): EuaSibAlcOdNe, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MIfEugSihAlkOmNn or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MIIl-pEup)MIIISiN3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): EuaSibAlcOdNe, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MIfEugSihAlkOmNn or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII1-pEup)MIIISiN3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

Provided is a production method of a β-type sialon fluorescent substance, where luminescence intensity can be improved without adding a metal element other than elements composing a β-type sialon fluorescent substance. Namely, in a production method of a fluorescent substance containing an optically-active element as the luminescence center in a crystal of nitride or acid nitride, a β-type sialon fluorescent substance is produced by a burning process for heat-treating a mixture including metal compound powder and an optically-active element compound; a high-temperature annealing process for heat-treating the burned product after cooling under a nitrogen atmosphere; a rare-gas annealing process for heat-treating the high-temperature annealed product under a rare gas atmosphere; and a process for treating the rare-gas treated product with an acid.

Provided is a silicon nitride powder for siliconitride phosphor having high luminance, a Sr3Al3Si13O2N21 phosphor and a β-Sialon phosphor using the powder, which can be used for vacuum fluorescent displays (VFDs), field emission displays (FEDs), plasma display panels (PDPs), cathode ray tubes (CRTs), light emitting diodes (LEDs), or the like, and processes for producing these phosphors. The silicon nitride powder for the siliconitride phosphors is a crystalline silicon nitride powder for use as a raw material for producing siliconitride phosphors including a silicon element, a nitrogen element, and an oxygen element, and has an average particle diameter of 1.0 to 12 μm and an oxygen content of 0.2 to 0.9% by weight.

It is aimed at providing an oxynitride powder, which is suitable for usage as a phosphor, is free from coloration due to contamination of impurities, and mainly includes a fine α-sialon powder.An oxynitride powder is produced by applying a heat treatment in a reducing and nitriding atmosphere, to a precursor compound including at least constituent elements M, Si, Al, and O (where M is one element or mixed two or more elements selected from Li, Mg, Ca, Sr, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), thereby decreasing an oxygen content and increasing a nitrogen content of the precursor.

A combustion synthesis system (100) is equipped with: a supply section (1) in which a particle powder containing Si is mixed with a particle powder containing SiO2 and a N2 gas to produce a mixture; a reaction section (2) which has heat resistance and pressure resistance, and in which combustion synthesis using, as a raw material, the mixture supplied from the supply section (1) proceeds; an ignition section (7) which can ignite the mixture supplied to the reaction section (2); and a heat extraction section (8) in which a reaction heat of the combustion synthesis reaction in the inside of the reaction section (2) is removed to the outside of the reaction section (2).

A sintered compact contains cubic sialon, β-sialon, and at least one of a first component and a second component. The first component is at least one element selected from the group consisting of iron, cobalt, nickel, and group 4 elements, group 5 elements, and group 6 elements of the periodic table. The second component is at least one compound containing at least one element selected from the group consisting of group 4 elements, group 5 elements, and group 6 elements and at least one element selected from the group consisting of carbon, nitrogen, and boron.

A method of making a β-SiAlON is described in involves mixing nanoparticles of AlN, Al2O3, and SiO2 with particles of Si3N4 and spark plasma sintering the mixture. The sintering may be at a temperature of 1450-1600° C. or about 1500° C. The particles of Si3N4 may be nanoparticles comprising amorphous Si3N4, or 25-55 μm diameter microparticles comprising β-Si3N4.