The application discloses a workpiece, and relates to the technical field of
optics. In the application, the workpiece is a
mask or a
wafer, the workpiece has a functional area and an alignment area on a
measurement plane, the alignment area is arranged around the functional area, the workpiece has a rotationally symmetric center, the alignment area has a plurality of alignment marks, one of any two alignment marks can be rotated around the rotationally symmetric center to a position coinciding with the other, and the alignment mark comprises two symmetrical sub-patterns and an asymmetrical sub-pattern arranged on the
measurement plane. Each symmetrical sub-pattern has a first symmetry axis and a second symmetry axis perpendicular to each other. The asymmetrical sub-pattern is configured as a pattern asymmetric about the first symmetry axis and the second symmetry axis. The workpiece in the application has the alignment mark, so that a
photolithography device can simultaneously realize direction identification and high-precision measurement, and the reliability of an alignment process is remarkably improved.