35 results about "Electron configuration" patented technology

A solid electrolytic capacitor that comprises an anode, a dielectric layer overlying the anode; and a cathode that contains a solid electrolyte layer overlying the dielectric layer. The anode comprises a porous, sintered body that defines a surface. The body is treated so that the surface contains a non-metallic element having a ground state electron configuration that includes five or more valence electrons at an energy level of three or more (e.g., phosphorous).

An electrolytic capacitor that includes an anode body formed from a powder comprising electrically conductive ceramic particles and a non-metallic element in an amount of about 100 parts per million or more is provided in one embodiment of the invention. The non-metallic element has a ground state electron configuration that includes five valence electrons at an energy level of three or more. Examples of such elements include, for instance, phosphorous, arsenic, antimony, and so forth. The capacitor also comprises a dielectric layer overlying the anode body and an electrolyte layer overlying the dielectric layer.

A method of carrying out a catalytic reaction with a catalytic reaction system comprising octahedral-based structures, such as a solid-solution or an ordered layered material, with specific early and late transition metals are described. A late transition metal is included in the solids so that a greater amount of solar energy can be absorbed by the catalytic reaction system and the solar efficiency of the method is increased. Catalytic compounds and compositions for carrying out the method are also described.

The invention provides a thin film transistor. The thin film transistor comprises a grid electrode, an active layer, a source electrode and a drain electrode which are formed on a substrate, wherein the active layer contains an ion-doped oxide, doped ions are of p-track electron configuration structures, and the p-track energy level of the doped ions is higher than 2 p-track energy level of oxygen ions in the oxide so as to enable the valence-band top of the active layer after doping to be higher than the energy level of oxygen vacancy formed in the active layer. Correspondingly, the invention further provides a manufacturing method of the thin film transistor, an array substrate and a display device. The active layer of the thin film transistor is mainly made of the ion-doped oxide, the stability of the thin film transistor can be improved, a shading structure is not needed to be added on the display device, and a manufacturing process is simplified.

The invention provides a red fluorescent material of which the chemical formula is (Li1−a−bMIaMII2b)2+m(Gd1−x−yEuxLny)4−2b(MoO4)7−c−z(WO4)c(A)z. The invention further provides a preparation method of the red fluorescent material, and an electric light source prepared from the red fluorescent material and a preparation method of the electric light source. The invention has the beneficial effect that the red fluorescent material uses Eu3+ ions as the main activator; under the excitation of near ultraviolet light or blue light emitted by a semiconductor LED chip, the red fluorescent material has high light conversion efficiency, and emits light in a mode of red sharp lines of characteristic 4f electron-configuration 5D0−>7F2 energy level transition of Eu3+; and the red fluorescent material has high color purity, high emissive power and stable performance.

A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.

The invention relates to a printed document of value having at least one authenticity feature in the form of a luminescent substance based on doped host lattices. The host lattice has a strong crystal field and is doped with at least one chromophore with the electron configuration (3d)2.

The invention is a system and method for conditioning fluids utilizing a magnetic fluid processor or device that includes an elongated housing comprising a core enclosed by a magnetic component in combination with an electrical return path. The process utilizes said device to affect and electron configuration within fluids by generating a magnetic field, thereby separating, for example, metals and organic or inorganic materials from fluids, in order to achieve desired fluid composition and properties.

Provided are an electronic device and a light-receiving and light-emitting device which can control the electron configuration of a graphene sheet and the band gap thereof, and an electronic integrated circuit and an optical integrated circuit which use the devices. By shaping the graphene sheet into a curve, the electron configuration thereof is controlled. The graphene sheet can be shaped into a curve by forming the sheet on a base film having a convex structure or a concave structure. The local electron states in the curved part can be formed by bending the graphene sheet. Thus, the same electron states as the cylinder or cap part of a nanotube can be realized, and the band gaps at the K points in the reciprocal lattice space can be formed.

A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.

The invention discloses an optimized electron configuration Co for efficient oxygen evolution reaction 4 The preparation method of N nanosheets, comprising: synthesizing Co(CO 3 ) 0.5 (OH)·0.11H 2 O nanosheet precursor; synthesis of Co 3 o 4 Nanosheet precursor: Co(CO 3 ) 0.5 (OH)·0.11H 2 O nanosheet precursors were calcined in air atmosphere and cooled to room temperature to obtain Co 3 o 4 Precursor; Synthesis of Co 4 N nanosheets: Calcination of Co in ammonia atmosphere 3 o 4 Precursor, to get Co 4 N nanosheets; regulation of Co 4 Electronic configuration of N nanosheets: by calcination of Co in an argon-hydrogen mixed atmosphere 4 N nanosheets to regulate Co 4 The nitrogen content of the N nanosheets can be adjusted to achieve the purpose of regulating the electronic configuration of Co. The present invention adopts Co 4 Partial reduction of N nanosheets yielded defect-type Co with different nitrogen contents 4 N nanosheets. Deficient Co with different nitrogen contents 4 N nanosheets have different electronic configurations, where the e of Co ions g The electronic filling number is also different, which has great potential for use in catalysis, energy storage and other fields.

The invention provides a red fluorescent material of which the chemical formula is (Li1−a−bMIaMII2b)2+m(Gd1−x−yEuxLny)4−2b(MoO4)7−c−z(WO4)c(A)Z. The invention further provides a preparation method of the red fluorescent material, and an electric light source prepared from the red fluorescent material and a preparation method of the electric light source. The invention has the beneficial effect that the red fluorescent material uses Eu3+ ions as the main activator; under the excitation of near ultraviolet light or blue light emitted by a semiconductor LED chip, the red fluorescent material has high light conversion efficiency, and emits light in a mode of red sharp lines of characteristic 4f electron-configuration 5D0−>7F2 energy level transition of Eu3+; and the red fluorescent material has high color purity, high emissive power and stable performance.

The invention relates to the technical field of magnetic information materials and especially relates to a low SFD magnetic recording material and a preparation method thereof. The low SFD magnetic recording material is mainly prepared from the following ingredients in parts by weight: 100 to 200 parts of iron oxide, 10 to 20 parts of strontium salt, 5 to 10 parts of barium salt, 1 to 2 parts of VIIB metal oxide, 0.5 to 1 part of VB metal oxide, 0.5 to 2 parts of samarium oxide, 4 to 10 parts of additive and 1 to 3 parts of fluxing agent, wherein the additive includes one or more of titanium oxide, cobalt oxide, zirconium oxide and nickel oxide. According to the low SFD magnetic recording material disclosed by the invention, the VIIB metal oxide and the VB metal oxide are added, special electron distribution of the VIIB metal oxide and the VB metal oxide are utilized, the VIIB metal oxide and the VB metal oxide perform alloying action with iron, strontium and barium, and a lattice constant is changed; thus, magnetism of the magnetic recording material is changed, and an SFD value is promoted to be reduced.