42results about How to "Preferable performance" patented technology

The present invention provides a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a first transistor and a second transistor. The first transistor and the second transistor are disposed on the substrate. The first transistor includes a first channel and a first work function layer. The second transistor includes a second channel and a second work function layer, where the first channel and the second channel include different dopants, and the second work function layer and the first work function layer have a same conductive type and different thicknesses.

A method of laundering fabric in a laundry machine, comprising the steps of:a) placing the fabric into a laundry machine and adding a detergent composition;b) subjecting the fabric to a two-parts washing cycle having a first and a second consecutive sub-cycles, the first sub-cycle having a first washing liquor and the second sub-cycle having a second washing liquor wherein the first washing liquor is more concentrated than the second washing liquor and preferably wherein the duration of the first washing sub-cycle is longer than the duration of the second washing sub-cycle; andc) rinsing the fabric.

A heat spreader is presented which can provide effective thermal management in a cost effective manner. The heat spreader includes a plurality of diamond particles arranged in a single layer surrounded by a metallic mass. The metallic mass cements the diamond particles together. The layer of diamond particles is a single particle thick. Besides the single layer of diamond particles, the metallic mass has substantially no other diamond particles therein. A thermal management system including a heat source and a heat spreader is also presented, along with methods for making and methods for use of such heat spreaders.

A magnetoelectric converting element is constructed by four or more magnetic resistance segments symmetrically arranged at a predetermined pitch with respect to the central line of a magnet perpendicular to the rotating direction of a magnetic moving body. The magnetizing direction of the magnet is set to the direction perpendicular to the direction opposed to the magnetic moving body. Further, 0.7P≦X≦P and P≦Y≦1.6P are set when the size of the magnet in the moving direction of the magnetic moving body is set to X and the size of the magnet in the direction opposed to the magnetic moving body is set to Y and the pitch of the magnetic resistance segments at both ends constituting the magnetoelectric converting element is set to P.

A paper making elastic belt has a drainage channels in a surface. A surface roughness of a wall of the drainage channel is not more than 2.0 μm in arithmetic average roughness (Ra).

There is provided a diffraction grid which is easily produced without reducing a grid size. There is provided an optical scanning device having effects such as a chromatic aberration correction and a temperature compensation even when a short wavelength light source having a wavelength of 500 nm or less is used, and an image forming apparatus using the optical scanning device. In the optical scanning device having the diffraction grid, for which the short wavelength light source having a wavelength of 500 nm or less is used, a design order of the diffraction grid is set to a diffraction order equal to or larger than a second order to obtain a grid shape which is easily formed.

The following steps are included: a step of changing crystal states of the specific portion of an resist layer of a master disk having an etching layer and the resist layer formed on the etching layer through exposure, a step of removing the specific portion, a step of removing the portion of the etching layer overlapping the removed portion of the resist layer, a step of forming a conductive film from which the resist layer is removed, a step of performing electroforming by using the conductive film as an electrode, and a step of exfoliating the etching layer from the conductive film.

A fastener includes a shank defining a shank root, a head, a drilling portion and main threads. The main threads divide the shank root into recessed root sections. Each main thread with two cutting faces which converge at an edge is inclined to a shank axis by 60 to 82 degrees. At least one main lobe projects from the recessed root section and flares outward to at least a midpoint of at least one cutting face between the recessed root section and the edge of the main thread. The inclination allows the main threads to have a large rotating angle for increasing cutting and drilling efficiency. The extension of the main lobe supports the main thread to bear the drilling stress to prevent the shank and main threads from snapping and allow debris accommodation to provide a firm fastening effect.

A semiconductor device and a method of forming the same, the semiconductor device includes a plural fin structures, two gates, a protection layer and an interlayer dielectric layer. The fin structures are disposed on a substrate. The two gates are disposed on the substrate across the fin structures. The protection layer is disposed on the substrate, surrounded sidewalls of the two gates. The interlayer dielectric layer is disposed on the substrate, covering the fin structures and the two gates.

To provide an aluminum alloy plastic worked article in which an aluminum texture state having preferable corrosion resistance and preferable mechanical characteristics in terms of, for example, the strength, the proof stress, and the elongation is formed.In an aluminum alloy plastic worked article including a plastic worked portion which is formed of a thinned portion 22 formed by plastic working and rib portions 21 formed at two ends of this thinned portion 22 and which has an approximately H-shaped or U-shaped cross-section, the plastic worked portion is a plastic worked portion 2 having strain portions 23 in each of which an equivalent strain of up to 4.0 mm / mm generated by plastic working is present, and the strain portions 23 are each located in the vicinity of the surface of the plastic worked portion 2 at a boundary between the thinned portion 22 and each of the rib portions 21 and are each formed of a non-recrystalline texture N of aluminum (atomic symbol: Al) which is not recrystallized or are each formed of the non-recrystalline texture N and a fine crystalline texture M which is recrystallized but has a crystal grain of 500 μm or less.

There is provided a diffraction grid which is easily produced without reducing a grid size. There is provided an optical scanning device having effects such as a chromatic aberration correction and a temperature compensation even when a short wavelength light source having a wavelength of 500 nm or less is used, and an image forming apparatus using the optical scanning device. In the optical scanning device having the diffraction grid, for which the short wavelength light source having a wavelength of 500 nm or less is used, a design order of the diffraction grid is set to a diffraction order equal to or larger than a second order to obtain a grid shape which is easily formed.

A method for producing metal complex nanoparticles, the method having: providing an aqueous solution containing a metal cyano complex anion having a metal atom MA as a central metal, with an aqueous solution containing zinc cation, the pH of the aqueous solution containing zinc cation being adjusted; and mixing the solutions and thereby producing metal complex nanoparticles composed of the metal atom MA and zinc under controlling the properties of the obtained metal complex nanoparticles.

An information recording apparatus (1) is provided with: a recording device (11) for recording a data pattern onto a recording medium (100); a reading device (11) for reading the data pattern, thereby obtaining a read signal; an amplitude limit filtering device (15) for limiting an amplitude level of the read signal by using a predetermined amplitude limit value, thereby obtaining an amplitude limit signal and for performing a high frequency emphasis filtering process on the amplitude limit signal, thereby obtaining an equalization-corrected signal;a measuring device (19) for measuring jitter of the equalization-corrected signal or the read signal; a detecting device (20) for detecting the data pattern of the equalization-corrected signal; and an adjusting device (21) for adjusting a recording condition such that the jitter satisfies a desired condition, with reference to the data pattern.

The present invention can provide a polymer film having an Ra (arithmetic average roughness) of 0.5 μm to 2.5 μm, an Ry (maximum height) of 3 μm to 11 μm, an Rz (ten-point average height) of 3 μm to 8 μm, and a light transmittance of 85% or higher. A preferable embodiment of the present invention can provide, at the same time, an optical diffusion function, an improved luminance, a transmittance and the like which are of a sufficient level not realized conventionally. In a still preferable embodiment, Sm (average concave-concave / convex-convex interval) of 90 μm to 160 μm and the average inter-local peak interval (S) is 5 μm to 15 μm.

A paper making elastic belt has a drainage channels in a surface. A surface roughness of a wall of the drainage channel is not more than 2.0 μm in arithmetic average roughness (Ra).

A platinum thin film having a thickness of 0.01 to 5 mum is formed by means of the sputtering method on a press face of a die based on the use of a cemented carbide base material. A nickel thin film having a thickness of 0.05 to 0.5 mum and a thin film made of an alloy of platinum and iridium are allowed to intervene between the cemented carbide base material and the platinum thin film, if necessary. Alternatively, an alloy thin film having a thickness of 0.01 to 5 mum, which contains 10 to 70% by weight of iridium and 30 to 90% by weight of one or more species of metals selected from metals of the platinum group except for iridium, may be allowed to intervene between the cemented carbide base material and the platinum thin film.

Provided is a close-up attachment lens suitably applicable to a taking lens body comprising a lens group in charge of a focus function and a lens group in charge of a zoom function completely separate from each other. The attachment lens is mounted on the taking lens body on an object side for close-up shooting. The attachment lens comprises a cemented lens having a negative refractive power as a whole, the cemented lens including a first lens with a convex surface on an object side having a positive refractive power and a second lens with a convex surface on an image plane having a negative refractive power, and a third single lens having a positive refractive power. The taking lens body comprises a focus lens group, a zoom lens group and a master lens group which are disposed independently of one another. The use of the attachment lens allows close-up shooting while maintaining various aberrations in a taking lens in a favorable condition.

A half-wave plate includes a single crystal plate made of an inorganic material having a birefringent property and rotatory power, wherein a polarization plane of linearly polarized light entering from an entrance surface of the crystal plate is rotated and then output from an exit surface of the crystal plate.

An integrated sprocket and housing used in a variable valve timing mechanism. The integrated sprocket and housing includes: a sprocket portion which is formed in a substantially annular shape, and which has teeth on the outer circumference thereof; and a housing portion which is disposed inside the sprocket portion, which has recesses in the inside thereof, and which is formed integrally with the sprocket portion as a sintered body made of a ferrous powder material, wherein the entire surface of the sprocket portion and the housing portion is covered with a steam oxidized layer which is formed by a steam treatment, and a nitrided layer which is formed by a gas soft nitriding treatment subsequent to the steam treatment.

An object of the present invention is to provide a zoom lens that can perform favorable correction of chromatic aberration in the entire zoom range, and can have higher performance and a smaller size than conventional ones; and an imaging apparatus including the zoom lens. To achieve the object, provided are a zoom lens and an imaging apparatus including the zoom lens. The zoom lens includes, in order from an object side: a positive first lens group G1; a negative second lens group G2; and a GR group including one or more lens groups. In the zoom lens, changing focal length is performed by varying intervals between the lens groups. The GR group includes convex lenses GpH and GpL satisfying predetermined conditional expressions. The convex lens GpH is the positive lens which is arranged second position or after from the object side in positive lenses in the GR group.

A method for in-situ repairing plasma damage, suitable for a substrate, is provided. A component is formed on the substrate. The formation steps of the component include a main etching process containing plasma. The method involves performing a soft plasma etching process in the apparatus of the main etching process containing plasma to remove a portion of the substrate. The soft plasma etching process is less than 30% of the power used in the main etching process.

A substrate structure includes a substrate body and a plurality of conductive pads formed on the substrate body and each having a first copper layer, a nickel layer, a second copper layer and a gold layer sequentially stacked. The thickness of the second copper layer is less than the thickness of the first copper layer. As such, the invention effectively enhances the bonding strength between the conductive pads and solder balls to be mounted later on the conductive pads, and prolongs the duration period of the substrate structure.

A method for fabricating a dual-damascene copper structure includes providing a semiconductor substrate having a dielectric layer thereon and a dual-damascene hole positioned in the dielectric layer, wherein a portion of the semiconductor substrate is exposed in the dual-damascene hole. A PVD process and an atomic CVD process are sequentially performed to form a substrate-protecting layer and a tantalum nitride layer in the dual-damascene hole. And then a copper layer is formed in the dual-damascene hole.

Provided are an oil removal system and an oil removal method with which good oil removal can be achieved, and a superheated steam generation device which can be used in the execution thereof. An oil removal device imparts, from a discharge part, superheated steam obtained by a superheated steam generation device to a treatment object, which includes oil on the surface thereof. The treatment object is set so that the surface temperature thereof is cooled by a cooling part so as to be lower than the superheated steam. Dew condensation is produced on the surface of treatment object by the discharge of the superheated steam from the discharge part, and the dew condensation is blown off and removed from the surface of the treatment object by a removal part, and thereby oil on the surface is removed together with the dew condensation.