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Trench MOSFET integrated with ESD protection and manufacturing method thereof

PendingCN110518063AStable ESD discharge characteristicsStable ESD protection capabilitySolid-state devicesSemiconductor/solid-state device manufacturingBody regionTrench mosfet
The invention discloses a more excellent trench MOSFET integrated with ESD protection and a manufacturing method thereof. The trench MOSFET integrated with ESD protection comprises a voltage stabilizing diode formed by connecting a positive PN junction and a negative PN junction in series between a grid electrode and a source electrode of the MOSFET, wherein one end of the voltage stabilizing diode is connected with the grid electrode of the MOSFET, and the other end of the voltage stabilizing diode is connected with the source electrode of the MOSFET. The trench MOSFET integrated with ESD protection comprises a voltage stabilizing diode formed by connecting a positive PN junction and a negative PN junction in series between the grid electrode and a drain electrode of the MOSFET, wherein one end of the voltage stabilizing diode is connected with the grid electrode of the MOSFET, and the other end of the voltage stabilizing diode is connected with the drain electrode of the MOSFET. In the manufacturing method of the trench MOSFET integrated with ESD protection, a P-type doped region of the voltage stabilizing diode integrated in the trench MOSFET and a P-type body region of the MOSFET can be synchronously formed in process, and an N-type doped region of the voltage stabilizing diode and an N-type source region of the MOSFET can be synchronously formed in process, so that lower manufacturing cost is realized.
Owner:深圳市芯电元科技有限公司
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