Wafer processing method for dividing a
wafer (10) with a component area (10c) on its front face (10a), wherein the component area (10c) has several separate regions in which several components (12) are individually formed such that they are separated by several division lines (14), wherein a
test element group (16) is formed at each division line (14), wherein the
wafer (10) is divided along the division lines (14) to obtain several component chips, each having one of the several components (12), wherein the
wafer processing method comprises: a film joining step of placing a
thermoplastic polymer film (20) on the front (10a) of the wafer (10), wherein the
thermoplastic polymer film (20) has a size capable of covering the device area (10c), and next of performing a thermocompression joining to join the
polymer film (20) to the front (10a) of the wafer (10), thereby protecting the front (10a) of the wafer (10) with the polymer film (20); a
test element group
cutting step of applying a first
laser beam through the polymer film (20) onto the wafer (10) along each division line (14) in a state in which a focal point of the first
laser beam is arranged at each division line (14), thereby
cutting the
test element group (16) formed at each division line (14); a formation step of a modified layer by applying a second
laser beam to a back side (10b) of the wafer (10) along each division line (14) in a state in which a focal point of the second laser beam is arranged within the wafer (10) in a region corresponding to each division line (14), wherein the second laser beam has a transmission
wavelength for the wafer (10), thereby forming a modified layer (110) within the wafer (10) along each division line (14); and a wafer splitting step of applying an external force to the wafer (10) after performing the test element group
cutting step and the modified layer formation step, thereby splitting the wafer (10) along the splitting lines (14) to obtain the device chips.