37results about How to "The induction process is simple" patented technology

The invention discloses a film preparation process and a gas sensor preparation method related to the process, and relates to the technical field of sensor preparation. The thin film preparation process adopted in the present invention integrates spin coating-spray coating process. After combining the traditional spin coating process and spray coating process, it has the advantages of uniform film formation by spin coating process and morphology regulation and control by spraying process. At the same time, the uniformity of the film is guaranteed. The atomized solution droplets are immediately spin-coated as soon as they touch the substrate, which solves the erosion of the upper layer solvent on the lower layer film during the solution method film preparation process, and forms a film with better uniformity. The independent spin-coating of droplets makes the organic semiconductor layer produce more grain boundaries, which effectively enhances the interaction between the gas to be measured and the organic semiconductor, and realizes the high-sensitivity detection of the gas to be measured by the device. At the same time, more grain boundaries are conducive to the diffusion of the gas. The recovery characteristics of the device are improved.

The invention discloses a temperature sensor based on an organic field effect tube and a preparation method thereof. The temperature sensor is a bottom-gate top-contact structure, and the temperature sensor is sequentially composed of a substrate, a biodielectric layer, and a doped semiconductor from bottom to top. A layer and an encapsulation layer, the biodielectric layer has a gate electrode on the upper surface of the substrate, the upper surface of the doped semiconductor layer is respectively provided with a source electrode and a drain electrode, and the doped semiconductor layer The material is a hybrid material composed of pectin and biosemiconductor materials. The extracted pectin works synergistically with bio-semiconductor materials and is sensitive to temperature; when mixed with bio-semiconductor materials and pectin, when the temperature changes, the electrical conductivity will change greatly, which will cause changes in the mobility and contact resistance of semiconductor materials, thereby Its electrical properties have changed greatly, and it is easier to sense the temperature of the outside world, which improves the temperature sensing response of the organic field effect tube, and realizes the highly sensitive and high-response detection of the device for temperature.

The invention provides a radix pseudostell adventitious root induction method and a radix pseudostell adventitious root tissue culture method of the medicinal technical field, which comprises that (1) a poisoned radix pseudostell explant is cancelled, and is inoculated on a callus tissue induction culture base after being cut under the bacteria-free condition, and the callus tissue is induced under the bacteria-free light-free condition; (2) the callus tissue that is grown fast with light-yellow color is fetched to be arranged on a 1 / 2MS solid culture base comprising one or more plant hormones of the seradix, the rhodofix and the kinetin to be induced to form a adventitious root under the bacteria-free light-free condition; (3) liquid culture of the radix pseudostell adventitious root-theobtained adventitious root is arranged in a 1 / 2MS liquid culture base comprising one or more plant hormones of the seradix, the rhodofix and the kinetin to be cultivated. The method of the inventionis simple and the efficiency is high; the adventitious root induction rate of the explant of the stem and the leaves of the radix pseudostell reaches more than 90 percent. The adventitious root growsfast with less inoculation and the growth rate can reach more than 46 times after being cultured in a bottle for 18 days.

A solid-state image sensor capable of suppressing deterioration of a transfer efficiency of electrons is provided. The solid-state image sensor comprises a first conductive type first impurity region that can store electrons and holes; a second conductive type second impurity region that is formed so as to have a region where the first and second impurity regions overlap one another; and a transfer electrode that is formed to overlie and extend at least from the first impurity region to the region where the first and second impurity regions overlap one another.