Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, 
artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial 
dielectric includes a 
dielectric material with a plurality of nanowires (or other nanostructures) embedded within the 
dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, 
diameter, carrier density, shape, 
aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an 
electric field to the controllable artificial dielectric. A wide range of electronic devices can use 
artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, 
microstrip devices, 
surface acoustic wave (SAW) filters, other types of filters, and 
radar attenuating materials (RAM).