The application relates to the technical field of
semiconductor testing and
noise characterization, and discloses a low-error
semiconductor low-
frequency noise voltage spectral density measurement method, which comprises the following steps: establishing a static working point of a measured
semiconductor device through a bias supply unit, generating a pseudo-random
pilot signal through a
pilot injection unit and injecting the
pilot signal into an input end as a path characterization reference, capturing a mixed
signal after superposition of essential
noise and the pilot through a double-channel amplification unit in parallel, synchronously acquiring digital sequences of each channel, performing cross-power spectrum
estimation on the sequences and an original pilot reference sequence through a digital
processing unit, extracting an instantaneous
transfer function reflecting
channel complex gain characteristics, performing real-
time drift compensation according to the instantaneous
transfer function and constructing an environmental
coherence factor, stripping environmental correlation
noise from compensated data by using the factor, and deducting a pilot self-energy item in combination with the instantaneous
transfer function. The application eliminates the influence of
system drift and environmental interference, and improves the accuracy of low-
frequency noise characterization.