394 results about "High Bandwidth Memory" patented technology

Stacked devices and methods of fabrication are provided. Die-to-wafer (D2W) direct-bonding techniques join layers of dies of various physical sizes, form factors, and foundry nodes to a semiconductor wafer, to interposers, or to boards and panels, allowing mixing and matching of variegated dies in the fabrication of 3D stacked devices during wafer level packaging (WLP). Molding material fills in lateral spaces between dies to enable fan-out versions of 3D die stacks with fine pitch leads and capability of vertical through-vias throughout. Molding material is planarized to create direct-bonding surfaces between multiple layers of the variegated dies for high interconnect density and reduction of vertical height. Interposers with variegated dies on one or both sides can be created and bonded to wafers. Logic dies and image sensors from different fabrication nodes and different wafer sizes can be stacked during WLP, or logic dies and high bandwidth memory (HBM) of different geometries can be stacked during WLP.

A photonic integrated circuit (PIC) disposed on a substrate and comprising a semiconductor die hosting an active portion and a passive portion mutually coupled, the active portion being configured to consume electrical power when activated, and the passive portion comprising an optical transmission medium configured to propagate an optical signal to or from the active portion of the PIC; an electronic integrated circuit (EIC) electrically coupled to the active portion of the PIC and comprising components that electrically operate on the active portion of the PIC; and a packaging compound at least partially encapsulating the PIC, the packaging compound defining a cavity on a side of the semiconductor die that is opposite from the substrate, the cavity being filled with an optically transparent medium such that the optical signal can be received from or transmitted to the passive portion of the PIC through the cavity.

The invention discloses a hardware accelerator and equipment oriented to triple sparse matrix multiplication and an application method thereof.The hardware accelerator comprises a high-bandwidth memory HBM, a crossbar switch network and an on-chip processing unit which are connected in sequence, and the on-chip processing unit comprises a hierarchical cache module, a global controller and a plurality of computing chips; each calculation piece comprises an RA calculation array, a TP calculation array and a local controller, wherein the RA calculation array and the TP calculation array are respectively used for executing front-end operation T = R * A and rear-end operation C = T * P in triple sparse matrix multiplication. The method aims at solving the problem that when a traditional universal processor processes triple sparse matrix multiplication, due to irregular memory access, uneven calculation load and sharp increase of middle parts and results, huge off-chip data carrying is confronted with serious performance and energy efficiency bottlenecks, and the calculation performance and energy efficiency of triple sparse matrix multiplication are improved.

Methods and apparatus relating to techniques for multi-tile memory management. In an example, a graphics processor includes an interposer, a first chiplet coupled with the interposer, the first chiplet including a graphics processing resource and an interconnect network coupled with the graphics processing resource, cache circuitry coupled with the graphics processing resource via the interconnect network, and a second chiplet coupled with the first chiplet via the interposer, the second chiplet including a memory-side cache and a memory controller coupled with the memory-side cache. The memory controller is configured to enable access to a high-bandwidth memory (HBM) device, the memory-side cache is configured to cache data associated with a memory access performed via the memory controller, and the cache circuitry is logically positioned between the graphics processing resource and a chiplet interface.

A package includes a photonic integrated circuit (PIC) disposed on a substrate and comprising a semiconductor die hosting an active portion and a passive portion mutually coupled, the active portion being configured to consume electrical power when activated, and the passive portion comprising an optical transmission medium configured to propagate an optical signal to or from the active portion of the PIC; an electronic integrated circuit (EIC) electrically coupled to the active portion of the PIC and comprising components that electrically operate on the active portion of the PIC; and a packaging compound at least partially encapsulating the PIC, the packaging compound defining a cavity on a side of the semiconductor die that is opposite from the substrate, the cavity being filled with an optically transparent medium such that the optical signal can be received from or transmitted to the passive portion of the PIC through the cavity.

There is provided a memory device including a processing-in-memory (PIM) dynamic random access memory (DRAM) die(s) and PIM-high bandwidth memory (HBM) devices. The memory device includes a core peripheral circuit structure including a bank core circuit including a row decoder and a sense amplifier of each of a plurality of banks, and a cell array structure disposed on the core peripheral circuit structure. The bank core circuit includes a plurality of sub core circuits correspondingly connected to the plurality of sub cell blocks, respectively. Each of the plurality of sub core circuits includes a sense amplifier segmented to be connected to a corresponding sub cell block, and a processing element connected to the segmented sense amplifier and configured to perform a logical operation on an operand that is data loaded into the segmented sense amplifier.

Disclosed is a system and method for sharing memory and enlarging capacity between computer resources using optical links. In certain embodiments, high bandwidth memory is shared between multiple processing units through electrical and optical switching.

A photonic integrated circuit (PIC) disposed on a substrate and comprising a semiconductor die hosting an active portion and a passive portion mutually coupled, the active portion being configured to consume electrical power when activated, and the passive portion comprising an optical transmission medium configured to propagate an optical signal to or from the active portion of the PIC; an electronic integrated circuit (EIC) electrically coupled to the active portion of the PIC and comprising components that electrically operate on the active portion of the PIC; and a packaging compound at least partially encapsulating the PIC, the packaging compound defining a cavity on a side of the semiconductor die that is opposite from the substrate, the cavity being filled with an optically transparent medium such that the optical signal can be received from or transmitted to the passive portion of the PIC through the cavity.

The invention relates to test access for stacked semiconductor devices and associated systems and methods. High bandwidth memory (HBM) devices and associated systems and methods are disclosed herein. In some embodiments, the HBM device includes a first die (e.g., an interface die), a plurality of second dies (e.g., memory dies) carried by the first die that may be communicatively coupled to the first die through a plurality of HBM buses through substrate vias (TSVs). The HBM device also includes an HBM test component at least partially carried by an upper surface of an uppermost second die. The HBM test component provides access to the first die and the second die through an uppermost surface of the HBM device to test the HBM device during fabrication. For example, the HBM test assembly allows the first die and the second die to be tested after the HBM device is mounted to a base substrate of a system-in-package without requiring any footprint for access pins on the base substrate.

In order to enable applications such as artificial intelligence (AI) and machine learning in a large scale, a large amount of information needs to be processed very fast. To improve the speed of the computation, not only faster graphical and central processors are required, but also the communication between processors and high bandwidth memories should be fast enough to reduce the latency. Optical interconnect can be a replacement for copper interconnect which is providing larger bandwidth and lower latency. As an efficient light source, micro-LEDs can be used as light source for chip-to-chip optical interconnect. Using a massively parallel memory-processor interconnect using low-power micro-LED, the computation speed will increase dramatically, and less amount of energy will be wasted through copper self-heating.

A package includes a photonic integrated circuit (PIC) disposed on a substrate and comprising a semiconductor die hosting an active portion and a passive portion mutually coupled, the active portion being configured to consume electrical power when activated, and the passive portion comprising an optical transmission medium configured to propagate an optical signal to or from the active portion of the PIC; an electronic integrated circuit (EIC) electrically coupled to the active portion of the PIC and comprising components that electrically operate on the active portion of the PIC; and a packaging compound at least partially encapsulating the PIC, the packaging compound defining a cavity on a side of the semiconductor die that is opposite from the substrate, the cavity being filled with an optically transparent medium such that the optical signal can be received from or transmitted to the passive portion of the PIC through the cavity.

The subject technology is directed to systems and methods for semiconductor devices with extended high-bandwidth memory (HBM) offsets. In a specific embodiment, the subject technology provides an apparatus that includes a circuit comprising a first connector and a second connector. The circuit is configured to send a first signal using the first connector to indicate a first selection. The apparatus further includes a first memory device comprising a first selector and a third connector and a fourth connector. The first selector is configured to couple the third connector to the second connector based on the first signal. The one or more connectors of the first memory devices cover a broad distance to ensure robust connectivity between the circuit and the first memory device. There are other embodiments as well.

An IC structure includes a memory stack including semiconductor dies horizontally separate with each other, wherein each semiconductor die has a top surface, a bottom surface, four sidewalls, and a plurality of edge pads arranged along a sidewall. The area of the bottom surface or the top surface of each semiconductor die is larger than that of any sidewall. The IC structure further includes a logic die with memory controller and processor circuit under the memory stack and electrically connected to the plurality of edge pads of each semiconductor memory die, and a packaging substrate under and electrically connected to the logic die with memory controller and processor. There is no interposer between the packaging substrate and the logic die with memory controller and processor circuit, and there is no TSV in each semiconductor die.

Memory systems and methods of assembly are described in which a memory system includes a routing substrate, a processor on a first side of the routing substrate, a memory die stack on the first side of the routing substrate, and a buffer bridge die embedded in the routing substrate and electrically connecting the memory die stack with the processor.

The invention relates to the technical field of large language model deployment, and discloses a large language model weight inverse quantization reasoning device and method.The method comprises the steps that low-precision weight data is transmitted to a high-bandwidth storage from a host and then transmitted to an on-chip storage through the high-bandwidth storage; data conversion from a low-precision format to a high-precision format is completed in the on-chip memory, the data is multiplied by an inverse quantization factor to obtain recovered high-precision weight data, and the functional unit is responsible for executing general matrix multiplication of input data and the high-precision weight data after inverse quantization. And pipeline parallel execution of the inverse quantization operation and the general matrix multiplication operation is realized through a double-buffering technology. According to the invention, on the basis of a dual-path inverse quantization architecture of the vector processing unit and a dual-buffer mechanism in the on-chip memory, the problem of hardware adaptation of low-precision calculation is solved, and efficient execution of a low-precision conversion algorithm is realized under the condition of limited hardware resources.

The invention discloses a multi-modal extensible high-performance homomorphic encryption system, and relates to the technical field of computer systems, the system comprises an upper-layer server software and drive architecture and a multi-modal homomorphic encryption hardware architecture realized based on an FPGA (Field Programmable Gate Array), which are in communication connection; the upper-layer server software and drive architecture comprises a multi-modal homomorphic encryption algorithm software library, a software memory scheduler, a modulo calculation module software drive and a floating point calculation module software drive; the multi-modal homomorphic encryption hardware architecture realized based on the FPGA comprises a communication data controller, a plurality of modulo calculation modules, a floating point calculation module, a data read-write bus and a high-bandwidth memory, and each modulo calculation module comprises a fast number theory transformation calculation unit. Through a software and hardware collaborative design scheme, the problem of low scheduling efficiency of ciphertext calculation tasks of different scales in hardware architecture design under multi-modal homomorphic encryption is solved, and the calculation efficiency is remarkably improved.

Methods for fabricating flexible interposers for providing electrical connection between devices mounted at different vertical positions with respect to a substrate or a planar interposer. A bonded structure may comprise a bent flexible interposer extending from a first interposer portion between a main device on the substrate or the planar interposer and a second interposer portion above the main device and above or below a device positioned above the main device and electrically connected to the main device via a bent portion of the flexible interposer.

The invention discloses an FPGA prototype verification platform based on a vehicle gauge level millimeter wave radar SOC chip, and belongs to the technical field of chip verification. Comprising a data selection unit, a data generation unit, a data storage unit, a data transmission unit, a data processing unit, an analysis and verification unit and a result display unit. A signal selector is used for selecting different data, a dial switch is dialed to 0 to select data actually collected by a radio frequency front end and dialed to 1 to select test data in an HBM, and a verification platform is built by integrating a radio frequency front end analog chip, an ADC chip and an FPGA minimum system to verify the overall function of the millimeter wave radar SOC chip. The verification platform built by using a plurality of discrete devices can restore the function of a real millimeter wave radar SOC chip as much as possible, the risk of tape-out failure is greatly reduced, the HBM high-bandwidth memory integrated in the FPGA can replace plug-in DDR particles, and a higher transmission rate can be obtained, so that the development cost and power consumption of the verification platform can be reduced.

Stacked devices and methods of fabrication are provided. Die-to-wafer (D2W) direct-bonding techniques join layers of dies of various physical sizes, form factors, and foundry nodes to a semiconductor wafer, to interposers, or to boards and panels, allowing mixing and matching of variegated dies in the fabrication of 3D stacked devices during wafer level packaging (WLP). Molding material fills in lateral spaces between dies to enable fan-out versions of 3D die stacks with fine pitch leads and capability of vertical through-vias throughout. Molding material is planarized to create direct-bonding surfaces between multiple layers of the variegated dies for high interconnect density and reduction of vertical height. Interposers with variegated dies on one or both sides can be created and bonded to wafers. Logic dies and image sensors from different fabrication nodes and different wafer sizes can be stacked during WLP, or logic dies and high bandwidth memory (HBM) of different geometries can be stacked during WLP.

System-in-packages (SiPs) having combined high bandwidth memory (HBM) devices, and associated systems and methods, are disclosed herein. In some embodiments, the SiP includes a base substrate (e.g., a silicon interposer), a processing unit carried by the base substrate, and a HBM device carried by the base substrate. The combined HBM device can be electrically coupled to the processing unit through one or more traces. Further, the combined HBM device can include an interface die, one or more volatile memory dies carried by the interface die (e.g., a volatile, main memory component), and one or more non-volatile memory dies carried by the one or more memory dies. The combined HBM device can also include a shared bus that is electrically coupled to the interface die, the volatile memory dies, and the non-volatile memory dies to establish communication paths therebetween.

A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device may include: a first semiconductor chip; at least one semiconductor chip stack on a surface of the first semiconductor chip in a first direction of the semiconductor device, the at least one semiconductor chip stack configured to be electrically connected to the first semiconductor chip; and a dielectric on the first semiconductor chip in the first direction, and surrounding the at least one semiconductor chip stack in at least one second direction of the semiconductor device, perpendicular to the first direction, wherein the at least one semiconductor chip stack includes at least one second semiconductor chip.

The present application relates to the technical field of computers, and discloses a dimension conversion chip, a method, a device, a storage medium and a program product. The chip comprises: an information acquisition circuit, used for acquiring dimension conversion information, the dimension conversion information being used for instructing to convert a tensor from a first layout format to a second layout format; a parameter determination circuit, used for determining parameters of a dimension conversion instruction on the basis of the dimension difference between the first layout format and the second layout format; and a dimension conversion circuit, used for reading the tensor from a high-bandwidth memory, and executing the dimension conversion instruction on the basis of the parameters so as to perform dimension transposition on the tensor in the first layout format to obtain a tensor in the second layout format, wherein the tensor in the second layout format is stored in the high-bandwidth memory and is used for being inputted into a neural network layer in a neural network model.

An apparatus including a high bandwidth memory circuit and associated systems and methods are disclosed herein. The high bandwidth memory circuit can include two or more physical layer circuits to communicate with neighboring devices. The high bandwidth memory circuit can broadcast a status to the neighboring devices. The neighboring devices can be configured according to the operating demands of the high bandwidth memory circuit.

An example microelectronic assembly includes a substrate, a bridge die over the substrate, and a die stack between the substrate and the bridge die, the die stack including a logic die and at least one memory die, where the logic die is between the at least one memory die and the bridge die.

The invention discloses a sparse LU decomposition acceleration method for an FPGA (field programmable gate array) with a flow-sensing high-bandwidth memory, belongs to the technical field of LU decomposition hardware acceleration, and aims to solve the problem of performance bottleneck and efficiency challenge faced by sparse LU decomposition on the FPGA. The acceleration method comprises the following steps of data stream preprocessing, wherein matrix data and metadata are stored and packaged based on a sparse storage format; customizing an FPGA hardware accelerator: carrying out HBM channel allocation and collaborative design of a control unit and memory management; parallel data flow management and scheduling are carried out, and sparse LU decomposition is executed; timely data supply is ensured through a multi-stage pipeline prefetching mechanism; and transmitting the task flow and the data flow to a special parallel processing engine for MAC / DIV calculation in combination with a flow sensing synchronous scheduling strategy.

The present disclosure relates methods, devices, systems, and techniques for high bandwidth memory (HBM). An example semiconductor device includes a first layer, a second layer, a first die between the first layer and the second layer, and a second die stacked together along a first direction. Each of the first die and the second die has a conductive layer. The first die and the second die are bonded through the second layer. The semiconductor device further includes a first contact structure coupled to the conductive layer of the first die and a second contact structure coupled to the conductive layer of the second die. The first contact structure extends along the first direction and contacts the conductive layer of the first die without extending through the second layer. The second contact structure extends through the second layer along the first direction without extending through the second die.

In an embodiment, a memory system may include at least two types of DRAM, which differ in at least one characteristic. For example, one DRAM type may be a high density DRAM, while another DRAM type may have lower density but may also have lower latency and higher bandwidth than the first DRAM type. DRAM of the first type may be on one or more first integrated circuits and DRAM of the second type may be on one or more second integrated circuits. In an embodiment, the first and second integrated circuits may be coupled together in a stack. The second integrated circuit may include a physical layer circuit to couple to other circuitry (e.g., an integrated circuit having a memory controller, such as a system on a chip (SOC)), and the physical layer circuit may be shared by the DRAM in the first integrated circuits.

An apparatus to facilitate processing in a multi-tile device is disclosed. In one embodiment, the apparatus includes a graphics processor comprising a first semiconductor die including a first high-bandwidth memory (HBM) device, a second semiconductor die including a second HBM device, and a third semiconductor die coupled with the first semiconductor die and the second semiconductor die in a 2.5-dimensional (2.5D) arrangement. The third semiconductor die includes a graphics processing resource and a cache coupled with the graphics processing resource. The cache is configurable to cache data associated with memory accessed by the graphics processing resource and the graphics processing resource includes a general-purpose graphics processor core and a tensor core.

A system includes a high bandwidth memory (HBM) and a convolutional neural network (CNN) engine. The HBM includes a virtual bank portion and a system memory portion. The virtual bank portion is configured to store a feature map data and the system memory portion is configured to support data exchanges with a host. The CNN engine includes a convolutional unit configured to execute convolutional layer instructions, a depthwise convolutional unit configured to execute depthwise layer instructions, and a first on-chip buffer. The first on-chip buffer is configured to receive and store the feature map data from the virtual bank portion or receive and store data results from the convolutional unit. The first on-chip buffer is further configured to send the feature map data or the data results from the convolutional unit to the depthwise convolutional unit for processing.

Provided are systems, methods, and apparatuses for high bandwidth memory configurations. In one or more examples, the systems, devices, and methods include positioning a first memory physical layer (PHY) interface on a surface of a compute die and connecting a first memory to the first memory PHY interface of the compute die via a first through-silicon via (TSV) connection. The systems, devices, and methods include connecting a second memory to a base die that connects to the compute die via a silicon interposer, positioning the compute die on the silicon interposer, and positioning the base die on the silicon interposer.