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102results about How to "Potent inhibition" patented technology

Non-volatile semiconductor memory

A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has a first latch and a second latch that are selectively connected to the memory cell array and transfer data each other. A controller controls the reprogramming and retrieval circuits on data-reprogramming operation to and data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches in storing the two-bit four-level data in one of the memory cells in a predetermined threshold level range. In the caching operation mode, data transfer between one of the memory cells selected in accordance with a first address and the first latch is performed while data transfer is performed between the second latch and input / output terminals in accordance with a second address with respect to one-bit two-level data to be stored in one of the memory cells.
Owner:KIOXIA CORP

Non-volatile semiconductor memory

A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming an retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array, each reprogramming and retrieval circuit having a first latch and a second latch that are selectively connected to the memory cell array and transfer data each other, and a controller that controls the reprogramming and retrieval circuits on data-reprogramming operation to and data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode, in the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data being performed using the first and the second lathes in storing the two-bit four-level data in one of the memory cells in a predetermined threshold level range, in the caching operation mode, data transfer between one of the memory cells selected in accordance with a first address and the first latch being performed while data transfer is being performed between the second latch and input output terminals in accordance with a second address with respect to one-bit two-level data to be stored in one of the memory cells.
Owner:KIOXIA CORP

Pyrrole and pyrazole DAAO inhibitors

Methods for increasing D-Serine concentration and reducing concentration of the toxic products of D-Serine oxidation, for enhancing learning, memory and/or cognition, or for treating schizophrenia, Alzheimer's disease, ataxia or neuropathic pain, or preventing loss in neuronal function characteristic of neurodegenerative diseases involve administering to a subject in need of treatment a therapeutically effective amount of a compound of formula I, or a pharmaceutically acceptable salt or solvate thereof:
wherein
    • [0001]
    • R1 and R2 are independently selected from hydrogen, halo, nitro, alkyl, acyl, alkylaryl, and XYR5;
    • [0002]
    • or R1 and R2, taken together, form a 5, 6, 7 or 8-membered substituted or unsubstituted carbocyclic or heterocyclic group;
    • [0003]
    • X and Y are independently selected from O, S, NH, and (CR6R7)n;
    • [0004]
    • R3 is hydrogen, alkyl or M+; M is aluminum, calcium, lithium, magnesium, potassium, sodium, zinc ion or a mixture thereof;
    • [0005]
    • Z is N or CR4;
    • [0006]
    • R4 is from selected from hydrogen, halo, nitro, alkyl, alkylaryl, and XYR5;
    • [0007]
    • R5 is selected from aryl, substituted aryl, heteroaryl and substituted heteroaryl;
    • [0008]
    • R6 and R7 are independently selected from hydrogen and alkyl; n is an integer from 1 to 6;
    • [0009]
    • at least one of R1, R2 and R4 is other than hydrogen; and
    • [0010]
    • at least one of X and Y is (CR6R7)n. D-serine or cycloserine may be coadministered along with the compound of formula I.
Owner:SEPACOR INC

Pyrrole and pyrazole DAAO inhibitors

Methods for increasing D-Serine concentration and reducing concentration of the toxic products of D-Serine oxidation, for enhancing learning, memory and / or cognition, or for treating schizophrenia, Alzheimer's disease, ataxia or neuropathic pain, or preventing loss in neuronal function characteristic of neurodegenerative diseases involve administering to a subject in need of treatment a therapeutically effective amount of a compound of formula I, or a pharmaceutically acceptable salt or solvate thereof:whereinR1 and R2 are independently selected from hydrogen, halo, nitro, alkyl, acyl, alkylaryl, and XYR5;or R1 and R2, taken together, form a 5, 6, 7 or 8-membered substituted or unsubstituted carbocyclic or heterocyclic group;X and Y are independently selected from O, S, NH, and (CR6R7)n;R3 is hydrogen, alkyl or M+;M is aluminum, calcium, lithium, magnesium, potassium, sodium, zinc ion or a mixture thereof;Z is N or CR4;R4 is from selected from hydrogen, halo, nitro, alkyl, alkylaryl, and XYR5;R5 is selected from aryl, substituted aryl, heteroaryl and substituted heteroaryl;R6 and R7 are independently selected from hydrogen and alkyl;n is an integer from 1 to 6;at least one of R1, R2 and R4 is other than hydrogen; andat least one of X and Y is (CR6R7)n.D-serine or cycloserine may be coadministered along with the compound of formula I.
Owner:SEPACOR INC
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