The invention discloses a
semiconductor device and a manufacturing method thereof, and
electronic equipment, and relates to the technical field of semiconductors, and a
metal connecting hole (3) adopted in the
semiconductor device has a relatively small resistance value and relatively high reliability. The
semiconductor device comprises a substrate (10), and a lower conductive pattern (1), an upper conductive pattern (2), a lower
dielectric layer (11), an upper
dielectric layer (12) and a
metal connecting hole (3) which are arranged on the substrate (10). Wherein the lower
dielectric layer (11) and the upper
dielectric layer (12) are located between the lower conductive pattern (1) and the upper conductive pattern (2), the
metal connecting hole (3) is located in the two dielectric
layers, and the lower conductive pattern (1) and the upper conductive pattern (2) are electrically connected through the metal connecting hole (3). The metal connection hole (3) comprises a first metal column (31), and the bottom of the first metal column (31) is in contact with the lower conductive pattern (1). A bonding layer (a1) is arranged between the first metal column (31) and the upper
dielectric layer (12), and the first metal column (31) is in contact with the lower
dielectric layer (11).