The application discloses a photomask structure and a method for forming through holes in a negative photoresistive pattern, as well as application. The photoresistive structure comprises shading parts corresponding to the through holes, each shading part is defined with a central shading region and a peripheral shading region distributed around the central shading region, a plurality of vertically hollowed slits are distributed in an array in the peripheral shading regions in at least one radial direction of the shading parts, and the widths of the slits meet: bn is larger than bn+1, where bnand bn+1 are the widths of two adjacent slits and bn is farther away from the central shading region compared with the slit corresponding to bn+1. According to the photomask structure, the method andthe application, the hollowed slits are formed in the array in the shading parts, so that the exposure of the positions of the through holes is increased; gentle slopes are formed on the edges of thethrough holes, so that the quality of electrical connections between pixel electrodes and signal wires of metal layers of thin film transistors is improved, meanwhile, film breakage of protective layers in a back-end process is reduced, and the quality and the yield of a product is improved.