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33results about How to "Miniature size" patented technology

Floating gate type split gate flash memory device structure and manufacturing method thereof

The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a floating gate type split gate flash memory device structure and a manufacturing method thereof. The method comprises the following steps of forming a floating gate oxide layer, a floating gate polycrystalline silicon layer, a polycrystalline silicon spacer layer and a control gate polycrystalline silicon layer which are stacked in sequence on a flash memory region of a first conductive type substrate; defining a flash memory cell region; forming a first conductive type anti-punch-through injection region at the position of the flash memory cell region; depositing a first dielectric layer; etching the first dielectric layer to form a first side wall; taking a mask layer and the first side wall as masks, and etching and removing the control gate polycrystalline silicon layer and the polycrystalline silicon spacer layer which do not cover the first side wall; performing first conductive type halo injection to form a first conductive type halo; depositing a second dielectric layer, and etching to form a second side wall; etching and removing the floating gate polycrystalline silicon layer and the floating gate oxide layer which do not cover the first side wall and the second side wall; and forming a second conductive type injection region by taking the second side wall and the first side wall as masks.
Owner:HUA HONG SEMICON WUXI LTD +1

NAND memory and manufacturing method thereof

The invention provides an NAND memory and a manufacturing method thereof. The manufacturing method of the NAND memory comprises the steps that a substrate is provided, word lines and selection tubes which are arranged repeatedly are formed on the substrate, and first side walls are formed on the side walls of the word lines and the selection tubes; the first side walls between the adjacent selection tubes are etched to enable the upper surfaces of the first side walls between the adjacent selection tubes to be lower than the upper surfaces of the selection tubes; an interlayer dielectric layeris formed, wherein the interlayer dielectric layer covers the first side wall and the substrate between the adjacent selection tubes; the first side walls between the word lines and between the wordlines and the selection tubes are removed; and oxide layers are formed on the word lines, the selection tube and the interlayer dielectric layer so as to form air gaps among the word lines. The firstside walls between the adjacent selection tubes are partially etched before the interlayer dielectric layer is formed, so that the first side walls between the selection tubes are buried under the subsequently formed interlayer dielectric layer, the selection tubes are prevented from being removed in the process of forming the air gap, and holes are prevented from appearing in the interlayer dielectric layer.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Mobile device and antenna structure

The invention provides a mobile device and an antenna structure. The mobile device comprises a metal machine component, a dielectric substrate, a support element, a feed-in radiation part, a ground plane, a short circuit part, a circuit element, a first parasitic radiation part, a second parasitic radiation part and an additional radiation part. The metal machine component is provided with a slotted hole comprising a first closed end and a second closed end; the dielectric substrate is provided with a first surface and a second surface which are opposite; the support element is arranged on themetal machine component and supports the dielectric substrate; the ground plane and the short circuit part are respectively coupled to the metal machine component; the circuit element is coupled between the short circuit part and the first grounding point of the ground plane; the first parasitic radiation part and the second parasitic radiation part are respectively coupled to the ground plane; the additional radiation part is adjacent to or coupled to the feed-in radiation part, the first parasitic radiation part and the second parasitic radiation part, and the additional radiation part is arranged on the first surface of the dielectric substrate; and the feed-in radiation part, the circuit element, the first parasitic radiation part, the second parasitic radiation part, the additional radiation part and the slotted hole of the metal mechanism component form an antenna structure together. The mobile device has the advantages of small size, wide frequency band, beautiful appearance and the like.
Owner:WISTRON NEWEB

Floating-gate split-gate flash memory device structure and manufacturing method thereof

The present application relates to the technical field of semiconductor integrated circuit manufacturing, and in particular, to a floating gate type split-gate flash memory device structure and a manufacturing method thereof. The method includes: forming a floating gate oxide layer, a floating gate polysilicon layer, a polysilicon spacer layer, and a control gate polysilicon layer in sequence on a flash memory region of a substrate of a first conductivity type; defining a flash memory cell region; forming a first conductive type anti-penetration injection region; depositing a first dielectric layer; etching the first dielectric layer to form a first spacer; using the mask layer and the first spacer as a mask, not covering the first spacer The control gate polysilicon layer and the polysilicon spacer layer are removed by etching; the first conductivity type halo implantation is performed to form the first conductivity type halo; the second dielectric layer is deposited, and the second sidewall spacer is formed by etching; The floating gate polysilicon layer and the floating gate oxide layer of the sidewall spacer and the second sidewall spacer are removed by etching; the second sidewall spacer and the first sidewall spacer are used as masks to form a second conductive type implantation region.
Owner:HUA HONG SEMICON WUXI LTD +1

Mobile devices and antenna structures

Mobile device and antenna structure. The mobile device includes a metal mechanical component, a ground plane, first and second parasitic radiation parts, a feeding radiation part and a dielectric substrate; the metal mechanical component has a slot, wherein the slot has a first and a second closed end; the first and the second The two parasitic radiating parts are both coupled to the metal mechanism and extend across the slot; the feeding radiating part has a feeding point, wherein the feeding radiating part is arranged between the first parasitic radiating part and the second parasitic radiating part; the medium The substrate is adjacent to the metal mechanical component, and the feed-in radiation part, the first parasitic radiation part and the second parasitic radiation part are arranged on the dielectric substrate; the feed-in radiation part, the first parasitic radiation part, the second parasitic radiation part and the metal mechanical component The slots together form an antenna structure; the antenna structure covers at least one first frequency band, and the length of the slots is less than 0.48 times the wavelength of the first frequency band. The invention has the advantages of small size, wide frequency band and beautifying the appearance of mobile devices, and is suitable for various mobile communication devices.
Owner:WISTRON NEWEB
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