Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

33results about How to "Miniature size" patented technology

LED light bar assembly

An LED (light emitting diode) light bar assembly is comprised of an elongated casing having an elongated cavity of substantially U-shape cross-section. The casing has a base wall, opposed side walls and an elongated open end between the side walls. One or more elongated heat sink LED modules each having two or more LEDs and electrical component parts thereof are retained in each of the modules. The LEDs are exposed in a spaced-apart relationship in a common wall of the modules. The casing is configured to removably receive and retain one or more of the modules therein in end-to-end relationship. The casing defines in combination with the one or more modules, at least one internal channel for the passage of wiring which is non-visible exteriorly of the module. At least one end connector is detachably securable to an end of the casing for securing the casing to a support structure. The connector has an internal passage for receiving wiring from the modules retained in the casing.
Owner:BEAUCHAMP PIERRE J

Miniature wireless system for deep brain stimulation

An implantable system and method for deep brain stimulation (DBS) treatments. The implantable system is sufficiently small and self-contained to enable implantation of the entire system within the brain, or optionally within the brain and the surrounding tissue. The system comprises an implantable inductor on which a voltage is induced when subjected to an electromagnetic field, and an implantable device comprising a housing, stimulating elements at an exterior surface of the housing, and electronics within the housing and electrically connected to the implantable inductor. The electronics produces a brain-stimulating current from the voltage induced on the implantable inductor and then delivers the brain-stimulating current to the stimulating elements. Deep brain stimulation is performed by subjecting the inductor to an electromagnetic field to induce a voltage on the inductor that powers the electronics to produce and deliver the brain-stimulating current to the stimulating elements.
Owner:UIM PRESSURE IMPLANT INC

LED light bar assembly

An LED (light emitting diode) light bar assembly is comprised of an elongated casing having an elongated cavity of substantially U-shape cross-section. The casing has a base wall, opposed side walls and an elongated open end between the side walls. One or more elongated heat sink LED modules each having two or more LEDs and electrical component parts thereof are retained in each of the modules. The LEDs are exposed in a spaced-apart relationship in a common wall of the modules. The casing is configured to removably receive and retain one or more of the modules therein in end-to-end relationship. The casing defines in combination with the one or more modules, at least one internal channel for the passage of wiring which is non-visible exteriorly of the module. At least one end connector is detachably securable to an end of the casing for securing the casing to a support structure. The connector has an internal passage for receiving wiring from the modules retained in the casing.
Owner:BEAUCHAMP PIERRE J

Polyphase diode driver

A driver supplying a total current to a load has a plurality (n) of driver stages (ST1 . . . STn). One stage is a master stage. Each driver stage has a switching device (Q) and an inductor (L) connected in series between the switching device and the output of the driver stage. The switching devices are turned ON in sequence with one another, during a cycle time (Tc) which is determined by sensing current through the inductor (L1) in the master stage. When the switching device is turned ON current through the inductor rises, when the inductor current reaches the value of a demanded current the switch is turned OFF, and after the switch is turned OFF the inductor continues to supply (output) current to the load with a current which ramps down. A rectifying device (D) connected between the inductor and the supply line allows current to continue to flow in the inductor and be supplied to the load after the switch is turned OFF.
Owner:ANALOG MODULES

Mobile device

This invention discloses a mobile device, comprising a metal mechanism member and a feed-in structure. The metal mechanism member isroughly plane-structured, wherein a slotted hole is formed in the metal mechanism member. The feed-in structure is roughly positioned in the slotted hole and coupled to a signal source. The metal mechanism member, the slotted hole and the feed-in structure form an antenna structure. The metal mechanism member and the slotted hole are seemed as a slotted antenna which generates a low frequency band by excitation, and the feed-in structure is excitated to generate one or more than one high frequency bands. The mobile device can not only effectively reduce the overall size of the antenna structure, but also can maintain sound antenna radiation efficiency.
Owner:ACER INC

System and method for large microcoded programs

An improved architectural approach for implementation of a microarchitecture for a low power, small footprint microcoded processor for use in packet switched networks in software defined radio MANeTs. A plurality of on-board CPU caches and a system of virtual memory allows the microprocessor to employ a much larger program size, up to 64k words or more, given the size and power footprint of the microprocessor.
Owner:ROCKWELL COLLINS INC

Miniature wireless system for deep brain stimulation

An implantable system and method for deep brain stimulation (DBS) treatments. The implantable system is sufficiently small and self-contained to enable implantation of the entire system within the brain, or optionally within the brain and the surrounding tissue. The system comprises an implantable inductor on which a voltage is induced when subjected to an electromagnetic field, and an implantable device comprising a housing, stimulating elements at an exterior surface of the housing, and electronics within the housing and electrically connected to the implantable inductor. The electronics produces a brain-stimulating current from the voltage induced on the implantable inductor and then delivers the brain-stimulating current to the stimulating elements. Deep brain stimulation is performed by subjecting the inductor to an electromagnetic field to induce a voltage on the inductor that powers the electronics to produce and deliver the brain-stimulating current to the stimulating elements.
Owner:UIM PRESSURE IMPLANT INC

Energy efficient processing device

A network processor with a high performance in computing throughput, size and power density for use in applications such as Software Defined Radio (SDR) mesh topology. The network processor uses a core architecture comprised of a programmable microcoded sequencer to implement state management and control, a data manipulation subsystem controlled by fully decoded microinstructions. To save power, the core architecture employs a fully decoded microcoded control unit, multiplexer based register select / write logic, between 10000 to 20000 gates, a power consumption of less than 10 mW.
Owner:ROCKWELL COLLINS INC

Integrated circuit structure for test

The invention discloses an integrated circuit structure for testing, which is positioned in a cutting channel region and comprises a first / a second testing keys, a first / a second conducting electrical connectors, a first / a second testing welding pads and a protective layer, wherein the first / the second testing keys comprise a first / a second active circuit elements which are collocated in a substrate of the cutting channel region and a first / a second inner connecting wires which are electrically connected with the first / the second active circuit elements. The second testing key and the first testing key are basically arranged in parallel. The first / the second conducting electrical connectors are positioned on the first / the second inner connecting wires and are connected with the upmost metallic layer of the second inner connecting wire. The first / the second testing welding pads are collocated above the first and the second testing keys and are contacted with the first / the second conducting electrical connectors. The protective layer is provided with a first opening which exposes a part of the first / the second testing welding pads and a second opening which exposes a part of the second welding pad.
Owner:UNITED MICROELECTRONICS CORP

Pluggable module with coaxial connector interface

A pluggable module comprising a housing having a first end and second end, an edge connector disposed at the first end, an F-type coaxial connector at the second end and a release lever including a stamped body that is symmetrical about a centerline bisecting the length of the body. The pluggable module may comprise a miniature balun disposed within the module for converting between a single-ended input to a differential load
Owner:METHODE ELETRONICS INC

Patch pump systems and apparatus for managing diabetes, and methods thereof

Embodiments of the current disclosure are directed toward systems, devices and methods for diabetes management. In particular, the present disclosure relates to systems, devices and methods for dispensing insulin to a patient using a miniaturized and portable patch pump.
Owner:TRIPLE JUMP ISRAEL LTD

Miniature automatic shutoff nozzle tip

ActiveUS20120100245A1Prevent drooling and stringingMelt pressureFood shapingMolding machineEngineering
An improved automatic shutoff nozzle tip which is mounted on the downstream end of a nozzle body of an injection molding machine or the like who's purpose is to act as a passageway for molten plastic fluid allowing the fluid to flow in one direction when urged to open by the pressure created by the forward motion of the plasticizing screw of said molding machine and to close when said pressure is lower than the designed opening pressure. The nozzle, having an convex outwardly extended portion that mates up with a sprue bushing or mold having complimentary convex radii, said nozzle having a orifice on the distal end that mates with a complimentary orifice of said sprue bushing. A nozzle that has a means for attachment to a nozzle body or the like with a rear seat, poppet and spring or similar device who's poppet is normally in the closed position until pressure is applied urging the poppet to move in the downstream direction and providing for a passageway for molten plastic fluid.
Owner:DURINA MICHAEL F

Floating gate type split gate flash memory device structure and manufacturing method thereof

The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a floating gate type split gate flash memory device structure and a manufacturing method thereof. The method comprises the following steps of forming a floating gate oxide layer, a floating gate polycrystalline silicon layer, a polycrystalline silicon spacer layer and a control gate polycrystalline silicon layer which are stacked in sequence on a flash memory region of a first conductive type substrate; defining a flash memory cell region; forming a first conductive type anti-punch-through injection region at the position of the flash memory cell region; depositing a first dielectric layer; etching the first dielectric layer to form a first side wall; taking a mask layer and the first side wall as masks, and etching and removing the control gate polycrystalline silicon layer and the polycrystalline silicon spacer layer which do not cover the first side wall; performing first conductive type halo injection to form a first conductive type halo; depositing a second dielectric layer, and etching to form a second side wall; etching and removing the floating gate polycrystalline silicon layer and the floating gate oxide layer which do not cover the first side wall and the second side wall; and forming a second conductive type injection region by taking the second side wall and the first side wall as masks.
Owner:HUA HONG SEMICON WUXI LTD +1

Chip package module and circuit board structure comprising the same

The invention provides a chip package module and a circuit board structure comprising the same. The chip package module includes an encapsulation layer, a chip, a substrate and a plurality of blind-hole electrodes. The encapsulation layer includes a first surface and a second surface opposite to the first surface. The chip includes a third surface and a fourth surface opposite to the third surface. A metal bump is fabricated on the third surface of the chip. The chip is embedded into the encapsulation layer from the first surface of the encapsulation layer. The metal bump is exposed from the first surface of the encapsulation layer. The substrate includes a metal layer, wherein the metal layer of the substrate is bonded to the chip through the metal bump. The plurality of blind-hole electrodes pass through the second surface of the encapsulation layer and are electrically connected to the metal layer of the substrate.
Owner:IND TECH RES INST

Electrical devices with light source

An electronic device with a light source is provided. The electronic device includes a base substrate, one or more electrical components placed on the base substrate, and a light source placed on the base substrate. The electrical components and the light source are electrically connected in a pre-defined manner. A molding material is molded over the electrical components and the light source, wherein the light source is partially visible.
Owner:MOSER BAER INDIA

NAND memory and manufacturing method thereof

The invention provides an NAND memory and a manufacturing method thereof. The manufacturing method of the NAND memory comprises the steps that a substrate is provided, word lines and selection tubes which are arranged repeatedly are formed on the substrate, and first side walls are formed on the side walls of the word lines and the selection tubes; the first side walls between the adjacent selection tubes are etched to enable the upper surfaces of the first side walls between the adjacent selection tubes to be lower than the upper surfaces of the selection tubes; an interlayer dielectric layeris formed, wherein the interlayer dielectric layer covers the first side wall and the substrate between the adjacent selection tubes; the first side walls between the word lines and between the wordlines and the selection tubes are removed; and oxide layers are formed on the word lines, the selection tube and the interlayer dielectric layer so as to form air gaps among the word lines. The firstside walls between the adjacent selection tubes are partially etched before the interlayer dielectric layer is formed, so that the first side walls between the selection tubes are buried under the subsequently formed interlayer dielectric layer, the selection tubes are prevented from being removed in the process of forming the air gap, and holes are prevented from appearing in the interlayer dielectric layer.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Semiconductor device and preparation method thereof

The invention provides a semiconductor device and a preparation method thereof. A second trench extending along a second direction is formed in a semiconductor substrate. U-shaped fins are arranged onthe two sides of the second trench in a staggered mode. The U-shaped fin is provided with a first trench extending along a first direction. The first source / drain regions are formed in the fins at the tops of the two sides of the first trench; a second source / drain region is formed in the fin at the bottom of the first trench; a gate line is filled in the first trench and extends along the firstdirection; the embedded wire is filled in the second trench extending along the second direction, so that the two first source / drain regions in the U-shaped fin respectively form double vertical L-shaped channels with the second source / drain region, the effective channel length is favorably increased, the short channel effect is overcome, and the smaller feature size and the higher integration degree are further favorably realized; and the U-shaped fins on the two sides of the second trench are arranged in a staggered manner, so that the coupling effect between adjacent active regions can be improved, and the device performance can be improved.
Owner:CHANGXIN MEMORY TECH INC

Pluggable module with coaxial connector interface

A pluggable module comprising a housing having a first end and second end, an edge connector disposed at the first end, an F-type coaxial connector at the second end and a release lever including a stamped body that is symmetrical about a centerline bisecting the length of the body.
Owner:METHODE ELETRONICS INC

Semiconductor structure preparation method and semiconductor device

The invention discloses a semiconductor structure preparation method comprising the following steps that: step 1, a first substrate layer and a second substrate layer are formed, wherein the first substrate layer is composed of a first thin film layer and a second thin film layer which are alternately deposited, and the second substrate layer is composed of a first thin film layer and a third thinfilm layer which are alternately deposited on the first substrate layer; the first thin film layer is a silicon oxide or silicon nitride thin film, the second thin film layer is an intrinsic or P-type amorphous layer, the third thin film layer is an N-type amorphous layer, a first groove is etched in the second thin film layer, and a second groove is etched in the third thin film layer.
Owner:NANJING UNIV

Mobile device and antenna structure

The invention provides a mobile device and an antenna structure. The mobile device comprises a metal machine component, a dielectric substrate, a support element, a feed-in radiation part, a ground plane, a short circuit part, a circuit element, a first parasitic radiation part, a second parasitic radiation part and an additional radiation part. The metal machine component is provided with a slotted hole comprising a first closed end and a second closed end; the dielectric substrate is provided with a first surface and a second surface which are opposite; the support element is arranged on themetal machine component and supports the dielectric substrate; the ground plane and the short circuit part are respectively coupled to the metal machine component; the circuit element is coupled between the short circuit part and the first grounding point of the ground plane; the first parasitic radiation part and the second parasitic radiation part are respectively coupled to the ground plane; the additional radiation part is adjacent to or coupled to the feed-in radiation part, the first parasitic radiation part and the second parasitic radiation part, and the additional radiation part is arranged on the first surface of the dielectric substrate; and the feed-in radiation part, the circuit element, the first parasitic radiation part, the second parasitic radiation part, the additional radiation part and the slotted hole of the metal mechanism component form an antenna structure together. The mobile device has the advantages of small size, wide frequency band, beautiful appearance and the like.
Owner:WISTRON NEWEB

A kind of semiconductor structure preparation method and semiconductor device

The invention discloses a method for preparing a semiconductor structure, which includes the following steps: the first step is to form a first base material layer and a second base material layer, and the first base material layer is composed of alternately deposited first film layers and second film layers Layer composition, the second substrate layer is composed of the first film layer and the third film layer deposited alternately on the first substrate layer, the first film layer is a silicon oxide or silicon nitride film, the The second thin film layer is an intrinsic or P-type amorphous layer, the third thin film layer is an N-type amorphous layer, the first groove is etched on the second thin film layer, and the second groove is etched on the third thin film layer groove.
Owner:NANJING UNIV

Floating-gate split-gate flash memory device structure and manufacturing method thereof

The present application relates to the technical field of semiconductor integrated circuit manufacturing, and in particular, to a floating gate type split-gate flash memory device structure and a manufacturing method thereof. The method includes: forming a floating gate oxide layer, a floating gate polysilicon layer, a polysilicon spacer layer, and a control gate polysilicon layer in sequence on a flash memory region of a substrate of a first conductivity type; defining a flash memory cell region; forming a first conductive type anti-penetration injection region; depositing a first dielectric layer; etching the first dielectric layer to form a first spacer; using the mask layer and the first spacer as a mask, not covering the first spacer The control gate polysilicon layer and the polysilicon spacer layer are removed by etching; the first conductivity type halo implantation is performed to form the first conductivity type halo; the second dielectric layer is deposited, and the second sidewall spacer is formed by etching; The floating gate polysilicon layer and the floating gate oxide layer of the sidewall spacer and the second sidewall spacer are removed by etching; the second sidewall spacer and the first sidewall spacer are used as masks to form a second conductive type implantation region.
Owner:HUA HONG SEMICON WUXI LTD +1

Mobile devices and antenna structures

Mobile device and antenna structure. The mobile device includes a metal mechanical component, a ground plane, first and second parasitic radiation parts, a feeding radiation part and a dielectric substrate; the metal mechanical component has a slot, wherein the slot has a first and a second closed end; the first and the second The two parasitic radiating parts are both coupled to the metal mechanism and extend across the slot; the feeding radiating part has a feeding point, wherein the feeding radiating part is arranged between the first parasitic radiating part and the second parasitic radiating part; the medium The substrate is adjacent to the metal mechanical component, and the feed-in radiation part, the first parasitic radiation part and the second parasitic radiation part are arranged on the dielectric substrate; the feed-in radiation part, the first parasitic radiation part, the second parasitic radiation part and the metal mechanical component The slots together form an antenna structure; the antenna structure covers at least one first frequency band, and the length of the slots is less than 0.48 times the wavelength of the first frequency band. The invention has the advantages of small size, wide frequency band and beautifying the appearance of mobile devices, and is suitable for various mobile communication devices.
Owner:WISTRON NEWEB

Miniaturized lens assembly

A miniaturized lens assembly includes a front lens portion, a rear lens portion, a large diaphragm plate mounted between the front and rear lens portions, a small diaphragm plate rotatable relative to the large diaphragm plate, a shutter plate rotatable relative to the large diaphragm plate, first and second actuating elements mounted on the rear lens portion, and two pivot axles mounted between the front and rear lens portions. The miniaturized lens assembly is miniature in size, is simple in structure, and is easy to assemble.
Owner:ASIA OPTICAL CO INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products