The application discloses a three-dimensional
waveguide cross structure, and relates to the technical field of
integrated optics and
silicon photonics, and comprises a buried
oxygen layer, a first material
waveguide layer, a first
silicon oxide cover layer, a second material
waveguide layer and a second
silicon oxide cover layer; the effective
coupling length of the projection overlapping area of the first material waveguide layer on the second material waveguide layer satisfies the formula: wherein, L represents the effective
coupling length, represents a
coupling wavelength, and the value range of n is 1 to 2n, wherein n is an integer, and the constant is less than 1. According to the application, the position of the first material waveguide layer relative to the second material waveguide layer is adjusted, so that the
power coupling of the cross port of the three-dimensional waveguide cross structure completes an integer multiple of the coupling period in propagation, thereby reducing the loss and
crosstalk caused by coupling enhancement.