In a single-
wafer heat treatment furnace, the lift speed is appropriately controlled to perform heat treatment on
semiconductor wafers, taking into consideration both quality standards and productivity. [Solution] The method for manufacturing a heat-treated
semiconductor wafer involves creating a
database of relationships between one or more
statistical quality parameters selected from the group consisting of flatness, light point defect, lift pin mark area, and lift pin mark height, and lift operation parameters; calculating
process capability parameters for lift operation parameter combinations based on the standard information of one or more quality parameters selected from the group and the
database; determining whether multiple lift operation parameter combinations pass or fail based on the calculation results; selecting lift operation parameter combinations from among those determined to pass, selecting lift operation parameter combinations whose total lift
operation time is less than or equal to a threshold; setting the lift speed in a single-
wafer heat treatment furnace with variable settings; and heat-treating the
semiconductor wafer in the furnace.