The invention discloses a
reaction chamber device with double-layer
airflow and a
quartz false
ogive that is used for a MOCVD
system, comprises a horizontal
quartz tube, metallic flanges that are arranged at two ends of the
quartz tube and used for sealing the two ends of the quartz tube, the rectangle quartz false
ogive and a substrate that are arranged inside the quartz tube, and an inclined plane lining that is placed on the substrate and arranged inside the quartz false
ogive, and the arrangement of the quartz false ogive and the inclined plane of the substrate satisfies the ideal hydrokinetic model of the chemical
gas phase reaction of the MOCVD. By utilizing the characteristics of simple design, good bearing pressure ability and convenient sealing and matching of the cylindrical quartz tube as well as the rectifying action of the
reaction chamber with the rectangle false ogive, and
combing with other MOCVD technical equipments, the invention forms the MOCVD
system with the
reaction chamber with the double-layer
airflow and the quartz false ogive, which has simple structure, low production cost and even
material growth; the quartz false ogive that has convenient disassembly and
assembly is convenient for cleaning the reaction chamber, and the
crystal growth
pollution is reduced, thus obtaining
crystal materials with high quality; the reaction chamber device with the double-layer
airflow and the quartz false ogive can further be used for the CVD and MOCVD of the growth of other
semiconductor materials such as Si, GaAs, InP and GaN, etc., as well as horizontal reaction systems of HVPE, etc.