The invention discloses a preparation process of a high-strength integrally-formed micro
inductor, and relates to the technical field of
microelectronics. When the high-strength integrally-formed micro-
inductor is prepared, firstly, a coil is manufactured to obtain a hollow-core rectangular coil with protruding external pins, then primary protection is conducted, the external pins are made to protrude to form a single-layer planar micro-
inductor, a semi-finished micro-inductor is manufactured through assembling, and 3, 4, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5 the modified organic
silica gel forms porous protection columns at the two ends of an external pin through secondary protection, and the high-strength integrally-formed micro inductor is manufactured. The prepared aluminum
nitride has good
stress protection performance and oxidation
corrosion resistance, and is easy to install and use.