81results about How to "Prevent annealing" patented technology

Thin film transistors TFT2a and TFT2b for driving elements are formed in parallel between a power source line (16) and an organic EL element (60), and active layers (12) of the transistors TFT2a and TFT2b are spaced apart in a scanning direction of a laser used for annealing for polycrystallization. As a result, the annealing conditions for the transistors TFT2a and TFT2b will not be exactly the same, thereby reducing the chance of a same problem being caused in both transistors TFT2a and TFT2b.

The invention discloses a method for sealing vacuum glass and a vacuum glass product thereby. The method comprises the following specific steps: preparing a metallized layer solidified together with a glass plate by the sintering technology on a surface to be sealed at the edge of the glass plate; and hermetically welding and connecting a metal sealing sheet between the metallized layers of two glass plates to realize the hermetic seal of the edges of the two glass plates. In the method, the metallized layer is sintered on the surface of each glass plate, the metallized layers and the metal sealing sheet are used for hermetically sealing the edges of the glass plates, and the method provides a brand-new technical means for manufacturing vacuum glass. The method disclosed by the invention has the advantages of firm connection of sealing parts, high air tightness, good heat shock resistance and the like. In addition, because of the use of the metal sheet, the vacuum glass product can better adapt to temperature deformation generated by temperature difference between an inner glass plate and an outer glass plate in the vacuum glass, and the vacuum glass can be guaranteed to be used safely.

Thin film transistors TFT2a and TFT2b for driving elements are formed in parallel between a power source line and an organic EL element, and active layers of the transistors TFT2a and TFT2b are spaced apart in a scanning direction of a laser used for annealing for polycrystallization. As a result, the annealing conditions for the transistors TFT2a and TFT2b will not be exactly the same, thereby reducing the chance of a same problem being caused in both transistors TFT2a and TFT2b.

The present invention relates to wear-resistant mechanical parts.

Methods and kits for efficient amplification of nucleic acids are provided. The disclosure generally relates to methods and kits for nucleic acid amplification of target nucleic acids of interest. The methods described herein promote the synthesis of the target nucleic acid (i.e., template nucleic acid) by reducing the production of undesirable primer-dimer structures and chimeric nucleic acid products during the amplification process by using novel modified primers.