The invention relates to a preparation method for a low-cost GaN-based 
light emitting diode. The preparation method for the low-cost GaN-based 
light emitting diode aims to solve the technical problems that existing 
light emitting diode preparation methods are high in cost, and substrates can hardly be utilized repeatedly. The preparation method for the low-cost GaN-based light emitting 
diode comprises the steps that a lamelliform TiC material with the surface covered with 
graphene serves as a substrate material, a light emitting 
diode epitaxial structure grows on the substrate material, and the epitaxial structure comprises an n-type 
doping layer, a multiple-
quantum-well light emitting layer and a p-type 
doping layer. According to the preparation method for the low-cost GaN-based light emitting 
diode, the lamelliform TiC material with the surface covered with 
graphene serves as the substrate material, separation of the substrate and the epitaxial structure is achieved through weak Van der Waals' force between the 
graphene and the epitaxial layer and mechanical tensile force, repeated using of the substrate is achieved, and the manufacturing cost of devices is lowered.