1results about How to "Improve gate reliability" patented technology

This application provides a semiconductor structure and a method for forming the same. The semiconductor structure includes: a semiconductor substrate with a first insulating layer formed on its surface; a gate signal conditioning circuit and a virtual circuit disposed on the surface of the first insulating layer, wherein the gate signal conditioning circuit and the virtual circuit have identical structures; one end of the gate signal conditioning circuit is connected to a gate signal source, and the other end is connected to the gate of a device cell, wherein the gate signal conditioning circuit is used to adjust the resistance between the gate signal source and the gate of the device cell; one end of the virtual circuit is connected to a virtual gate monitoring signal terminal, and the other end is connected to a virtual gate monitoring ground terminal, wherein the virtual circuit is used to simulate the operation of the gate signal conditioning circuit and is monitored.