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91 results about "Atops" patented technology

Atops is an extinct genus from a well-known class of fossil marine arthropods, the trilobites. It lived during the late Atdabanian stage, which lasted from 530 to 524 million years ago during the early part of the Cambrian Period.

Rock joint ultrasonic experimental apparatus under complex stress and control system thereof

The invention discloses a rock joint ultrasonic experimental apparatus under complex stress and a control system thereof; the apparatus comprises a rigid frame, an experimental space is provided in the rigid frame, a horizontal sliding bearing plate is slidably disposed at the bottom of the rigid frame, a dynamometer, an axial ultrasonic vibration transducer, a tangential ultrasonic vibration transducer and an axial loading block are rigidly connected in sequence on the horizontal sliding bearing plate, an axial hydraulic driver is mounted atop of the rigid frame, the piston end of the axial hydraulic driver is in sequential rigid connection to the dynamometer, the axial ultrasonic vibration transducer, the tangential ultrasonic vibration transducer and the axial loading block, four tangential hydraulic drivers are horizontally mounted at the front, back, front and left of the rigid frame respectively, the piston ends of the tangential hydraulic drivers are each connected to a tangential loading piston, and the other ends of the tangential loading pistons are in sequential rigid connection to the dynamometer and the tangential loading block. The rock joint ultrasonic experimental apparatus under complex stress and the control system thereof allow stress field state of a joint face in underground rock to be simulated for ultrasonic dynamic experiment.
Owner:INST OF MOUNTAIN HAZARDS & ENVIRONMENT CHINESE ACADEMY OF SCI

P-type gate enhanced transistor based on oxidation self-stop technology and preparation method thereof

The invention discloses a p-type gate enhanced transistor based on the oxidation self-stop technology and a preparation method thereof. The preparation method comprises the steps that a heterojunctionincluding a first semiconductor and a second semiconductor is provided, and two-dimensional electron gas is formed in the heterojunction; a third semiconductor and a fourth semiconductor are grown and formed on the heterojunction in turn; a mask film is arranged on the fourth semiconductor and the fourth semiconductor exposed out of the mask film is oxidized to form the oxide, and the oxidation reaction is enabled to self-atop when reaching the third semiconductor through the advantage that the oxidation rate of the fourth semiconductor is far greater than that of the third semiconductor under the same condition; and a source electrode, a drain electrode and a gate electrode are manufactured so that the gate electrode and the fourth semiconductor reserved in the area under the gate are enabled to be connected, wherein the fourth semiconductor reserved in the area under the gate is used for enabling the two-dimensional electron gas distributed in the area below the gate to be exhausted. The interface state produced by secondary epitaxy can be avoided, quasi-in-situ passivation is realized through formation of the oxide, the current collapse can be suppressed and the device performance can be enhanced.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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