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62results about How to "Accurate profile" patented technology

Methods and apparatus for dual source calibration for distributed temperature systems

Systems and methods for calibrating a temperature sensing system are disclosed. In one respect, a dual light source configuration may be provided. A first light source may illuminate a sensing fiber and an anti-Stokes band may be detected. A second light source may illuminate a sensing fiber and a Stokes band may be detected, where the Stokes band is substantially similar to the anti-Stokes band of the first light source. A ratio between the anti-Stokes and Stokes band may be used to calibrate a temperature sensing system.
Owner:SENSORTRAN

Infrared detection unit using a semiconductor optical lens

An infrared detection unit includes a base carrying an infrared sensor element, and a cap configured to be fitted on the base to surround the infrared sensor element. The cap has a top wall with a window in which a semiconductor lens is fitted to collect an infrared radiation onto the infrared sensor element. The semiconductor optical lens is formed from a semiconductor substrate to have a convex lens and a flange which surround said convex lens. An infrared barrier is formed on the semiconductor lens to block the infrared radiation from passing through the boundary between the circumference of the convex lens and the window. Accordingly, the infrared sensor element can receive only the infrared radiation originating from a detection area intended by the convex lens.
Owner:MATSUSHITA ELECTRIC WORKS LTD

Method of forming a semiconductor device using a sacrificial uniform vertical thickness spacer structure

Disclosed is a method of forming planar and non-planar semiconductor devices using a sacrificial gate sidewall spacer with a uniform vertical thickness. The method forms such spacers by selectively growing an epitaxial film on the vertical sidewalls of a gate structure. The use of an epitaxial growth process, as opposed to a deposition and etch process, ensures that the resulting spacers will have a uniform vertical thickness. Then, any process steps (e.g., implant and / or etch process steps) requiring the use of the gate sidewall spacers (e.g., as a mask or shield) are performed. Precise implant and / or etch profiles can be achieved, during these process steps, as a function of the uniformity of the gate sidewall spacers. Once such process steps are completed, the sidewall spacers are selectively removed. Optionally, before removing the sidewall spacers, they can be oxidized in order to enhance the selective removal process.
Owner:TAIWAN SEMICON MFG CO LTD

Process Of Making An Optical Lens

A semiconductor substrate is anodized to be shaped into an optical lens. Prior to being anodized, the substrate is finished with an anode pattern on its bottom surface so as to be consolidated into a unitary structure in which the anode pattern is precisely reproduced on the substrate. The anodization utilizes an electrolytic solution which etches out oxidized portion as soon as it is formed as a result of the anodization, to thereby develop a porous layer in a pattern in match with the anode pattern. The anode pattern brings about an in-plane distribution of varying electric field intensity by which the porous layer develops into a shape complementary to a desired lens profile. Upon completion of the anodization, the semiconductor substrate is shaped into the lens by etching out the porous layer and the anode pattern from the substrate.
Owner:PANASONIC CORP
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