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64results about How to "Accurate profile" patented technology

Methods and apparatus for dual source calibration for distributed temperature systems

Systems and methods for calibrating a temperature sensing system are disclosed. In one respect, a dual light source configuration may be provided. A first light source may illuminate a sensing fiber and an anti-Stokes band may be detected. A second light source may illuminate a sensing fiber and a Stokes band may be detected, where the Stokes band is substantially similar to the anti-Stokes band of the first light source. A ratio between the anti-Stokes and Stokes band may be used to calibrate a temperature sensing system.
Owner:SENSORTRAN

Method and system for monitoring and profiling an integrated circuit die temperature

InactiveUS6996491B2Avoid unnecessary responseAccurate temperature profileThermometer detailsDigital data processing detailsIntegrated circuitThermal sensors
A system and method are provided for sensing a physical stimulus of an integrated circuit. The system and method operate with one or more active thermal sensors embedded in the die of an integrated circuit to provide highly accurate die temperature measurements. The system and method are able to monitor and control the die temperature of the integrated circuit to avoid an integrated circuit malfunction due to an undesirable temperature condition.
Owner:ORACLE INT CORP

Heating device for plastic blanks

The invention relates to a method and a device for heating preforms of a thermoplastic material, the preforms, after having been heated, being subjected to a reshaping operation, and microwaves being applied to the preforms, at least during a portion of the period of heating, in a resonator.
Owner:KRONES AG

Bevel and hypoid gear and method of manufacture

Bevel and hypoid gears are used in power transmissions including automotive applications. Provided is a net shaped bevel or hypoid gear having a generally annular gear body including a plurality of radially outwardly extending gear teeth formed from a generally annular blank made of powdered metal. Also provided is a method for manufacturing a net shaped bevel or hypoid gear including the steps of providing and optionally heat treating a generally ring-shaped or annular blank made of metal powder, then incrementally deforming the blank by orbitally forming or roll forming to produce a net shaped gear member with a plurality of outwardly extending gear teeth, which may be of a bevel or hypoid type.
Owner:GM GLOBAL TECH OPERATIONS LLC

Infrared detection unit using a semiconductor optical lens

An infrared detection unit includes a base carrying an infrared sensor element, and a cap configured to be fitted on the base to surround the infrared sensor element. The cap has a top wall with a window in which a semiconductor lens is fitted to collect an infrared radiation onto the infrared sensor element. The semiconductor optical lens is formed from a semiconductor substrate to have a convex lens and a flange which surround said convex lens. An infrared barrier is formed on the semiconductor lens to block the infrared radiation from passing through the boundary between the circumference of the convex lens and the window. Accordingly, the infrared sensor element can receive only the infrared radiation originating from a detection area intended by the convex lens.
Owner:MATSUSHITA ELECTRIC WORKS LTD

Method and apparatus for manufacturing semiconductor devices

InactiveUS20050028837A1Precise lateral profileLarge deviation rangeSemiconductor/solid-state device manufacturingCleaning using liquidsRoom temperatureEngineering
A method and an apparatus for cleaning (e.g., removing etch by-products from) an etched target are disclosed. The method comprises providing a cleaning solution at a predetermined temperature lower than room temperature and cleaning the etched target with the cleaning solution. The apparatus for cleaning semiconductor devices comprises a chuck on which a semiconductor substrate is mounted; a solution storage part for storing a cleaning solution; a solution supply part for supplying the semiconductor substrate with the cleaning solution; a heat exchange part for maintaining the cleaning solution at a temperature lower than room temperature; and a control part for controlling the chuck rotation for a predetermined time and the cleaning solution delivery from the heat exchange part to the semiconductor substrate via the solution supply part. Accordingly, the present invention provides a more precise lateral profile of an etched pattern from the etch by-product cleaning process.
Owner:DONGBU ELECTRONICS CO LTD

Smart appliances, systems and methods

A smart inductive heating appliance includes an interface for interacting with a package intelligence and communication module on a smart package. The smart heating appliance may also detect and charge chargeable devices inductively. A number of data sets may be utilized to enhance control of heating / cooking and to enhance safety. A thermodynamic load profile of the package may include detailed data correlations established in a package testing step and utilized to control heating of the package as well as to validate and authenticate the package.
Owner:HOLLYMATIC

Device, program and method for generating a profile

A profile generation device obtains image data including information on pixel locations each indicating a location of a pixel, and extracts a location as an extraction point from the image data, the location being correlated with a predetermined color value to be used for generating a profile. The profile generation device performs a color measurement on an output image, and detects a location in the output image and a colorimetric value of the location, then generates data to be used for generating the profile from a pair of the color value correlated with the extraction point and the colorimetric value correlated with the location in the output image, wherein the location corresponds to the extraction point. Consequently, the profile generation device generates the profile by using the generated data.
Owner:DAINIPPON SCREEN MTG CO LTD

Method of forming a semiconductor device using a sacrificial uniform vertical thickness spacer structure

Disclosed is a method of forming planar and non-planar semiconductor devices using a sacrificial gate sidewall spacer with a uniform vertical thickness. The method forms such spacers by selectively growing an epitaxial film on the vertical sidewalls of a gate structure. The use of an epitaxial growth process, as opposed to a deposition and etch process, ensures that the resulting spacers will have a uniform vertical thickness. Then, any process steps (e.g., implant and / or etch process steps) requiring the use of the gate sidewall spacers (e.g., as a mask or shield) are performed. Precise implant and / or etch profiles can be achieved, during these process steps, as a function of the uniformity of the gate sidewall spacers. Once such process steps are completed, the sidewall spacers are selectively removed. Optionally, before removing the sidewall spacers, they can be oxidized in order to enhance the selective removal process.
Owner:TAIWAN SEMICON MFG CO LTD

Method for Manufacturing a Multimode Optical Fibre

The invention relates to a multimode optical fibre having a refractive index profile, comprising a light-guiding core surrounded by one or more cladding layers. The present invention furthermore relates to an optical communication system comprising a transmitter, a receiver and a multimode optical fibre.
Owner:DRAKA COMTEQ BV

Reflow apparatus

The present invention provides a reflow apparatus capable of precisely adjusting the heating temperature and heating time when heating a work for reflow. A work transfer conveyor for transferring a work into a furnace body is disposed, wherein a plurality of preheating zones through for preheating the work, a plurality of reflow zones for heating the work for reflow, and a plurality of cooling zones for cooling the work are successively arranged along the work transfer conveyor in the furnace body. The individual reflow zones are formed shorter than the individual preheating zones in the work transfer direction. It is preferable that the sizes of the individual reflow zones in the transfer direction are shortened to approximately 65% to 85% with respect to the individual preheating zones or the conventional individual reflow zones.
Owner:TAMURA KK +1

Process Of Making An Optical Lens

A semiconductor substrate is anodized to be shaped into an optical lens. Prior to being anodized, the substrate is finished with an anode pattern on its bottom surface so as to be consolidated into a unitary structure in which the anode pattern is precisely reproduced on the substrate. The anodization utilizes an electrolytic solution which etches out oxidized portion as soon as it is formed as a result of the anodization, to thereby develop a porous layer in a pattern in match with the anode pattern. The anode pattern brings about an in-plane distribution of varying electric field intensity by which the porous layer develops into a shape complementary to a desired lens profile. Upon completion of the anodization, the semiconductor substrate is shaped into the lens by etching out the porous layer and the anode pattern from the substrate.
Owner:PANASONIC CORP
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