The invention provides a technique that enables formation of minute patterns on an uneven substrate in volume production without reducing productivity. The method for fabricating a
semiconductor device includes: first patterning a
semiconductor film on a substrate to form element regions, each of which will be provided with a source / drain region and a channel region, second forming a gate insulating film covering segments of the patterned
semiconductor film in the respective element regions, third forming gate electrodes on the gate insulating film at predetermined positions, and fourth forming the source / drain region and the channel region in each element region. At least the gate electrodes are formed by a process including an
exposure step through a holographic
exposure mask in the third step, and by a process including an
exposure step through a projection exposure
mask, the element regions are formed in the first step, and the source / drain regions and the channel regions are formed in the fourth step.