116 results about "Automatic process control" patented technology

Automatic process control of additive manufacturing. The system includes an additive manufacturing device for making an object and a local network computer controlling the device. At least one camera is provided with a view of a manufacturing volume of the device to generate network accessible images of the object. The computer is programmed to stop the manufacturing process when the object is defective based en the images of the object.

Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

A method by which a freeze-drying process may be developed from a single freeze-drying experiment. The method uses in-process manometric temperature measurement (MTM) data to optimize the primary drying conditions. Manometric temperature measurement is a procedure by which the product temperature at the sublimation interface and the resistance of the previously dried product to vapor flow may be determined. The inventive method can be used in an inventive freeze-drying system. The system comprises a freeze-dryer, a measurement system including hardware and software necessary for generation of MTM data and a control system including hardware and software for interpretation of the generated MTM data and control of the freeze-dryer. The measurement system and control system may be combined into a single device. The inventive freeze-drying system utilizes a microprocessor and software to define conditions for the freezing and secondary drying stages and to define chamber pressure and “target product temperature” for the primary drying stage based on MTM data and operator input data, thereby providing a near optimized freeze-drying process.

A method for filling a trench is provided. A wafer having at least a first layer formed thereon is provided. A trench is formed in the first layer. The depth of the trench is measured. A target thickness is determined based on the depth of the trench. A second layer of the target thickness is formed over the trench. A processing line includes a trench etch tool, a first metrology tool, a trench fill tool, and an automatic process controller. The trench etch tool is adapted to form a trench in a first layer on a wafer. The first metrology tool is adapted to measure the depth of the trench. The trench fill tool is adapted to form a second layer over the first layer based on an operating recipe. An automatic process controller is adapted to determine a target thickness based on the depth of the trench and modify the operating recipe of the trench fill tool based on the target thickness.

A method for controlling spacer width in a semiconductor device is provided. A substrate having a gate formed thereon is provided. An insulative layer is formed over at least a portion of the substrate. The insulative layer covers the gate. The thickness of the insulative layer is measured. A portion of the insulative layer to be removed is determined based on the measured thickness of the insulative layer. The portion of the insulative layer is removed to define a spacer on the gate. A processing line for forming a spacer on a gate disposed on a substrate includes a deposition tool, a thickness metrology tool, and automatic process controller, and a spacer etch tool. The deposition tool is adapted to form an insulative layer over at least a portion of the substrate. The insulative layer covers the gate. The thickness metrology tool is adapted to measure the thickness of the insulative layer. The automatic process controller is adapted to determine a portion of the insulative layer to be removed based on the measured thickness of the insulative layer. The spacer etch tool is adapted to remove the portion of the insulative layer to define a spacer on the gate.

An automated process control system configured for controlling a plasma processing system having a chamber, the chamber being configured for processing a substrate. The automatic process control system includes a first sensor disposed within the chamber, the first sensor being configured for making a first plurality of measurements pertaining to a first parameter associated with a structure disposed at least partially within the chamber. The performing the first plurality of measurements is performed during the processing of the substrate. The automatic process control system further includes first logic coupled to receive the first plurality of measurements from the first sensor. The first logic is configured for analyzing using SPC methodologies the first plurality of measurements during the processing. There is also included second logic coupled to receive a first signal from the first logic, the second logic being configured to stop the processing prior to completing the processing if the first signal indicates a fault with the processing.

A processing system includes a sensor, a processing tool, and an automatic process controller. The sensor has a plurality of sensing regions. The processing tool is adapted to process at least one process layer on a wafer. The process tool includes a process control device controllable by a process control variable. The sensor is adapted to measure a process layer characteristic of the process layer in a selected one of the sensing regions. The automatic process controller is adapted to receive the process layer characteristics measured by the sensor and adjust the process control variable in response to the process layer characteristic measured in one sensing region differing from the process layer characteristic measured in another sensing region. A method for controlling wafer uniformity includes processing a process layer on a wafer; measuring a characteristic of the layer in a plurality of sensing locations; and changing a process control variable of a process control device in response to the process layer characteristic measured in one sensing location differing from the process layer characteristic measured in another sensing location to affect the rate of processing the process layer in at least one of the sensing locations.

A process control system that automatically monitors processes and performs activities based on conditions detected during monitoring. The information needed to do the monitoring and perform activities is contained in tables in a database system. The process control system may be configured by configuring entries in the tables. An administrative query table has records that define administrative queries. Each administrative query has associated with it a query to be executed on a table of process records that indicate statuses of the processes being monitored, a scope that defines a subset of the process records upon which the query is to be executed, a schedule from which a time of next execution of the administrative query can be computed, and an activity. The activity is a set of one or more actions. When an administrative query is executed and the query associated with the administrative query is run on the table of process records and the result set is not empty, the activity is performed with regard to the process records of the result set. A plurality of activities may be associated with the administrative query, with the activity to be performed being selected on the basis of a state of a given process record with regard to the query.

A control system for use with a multi-layer molding device having an inspection device for measuring a characteristic of a product of a cavity of the molding device and a controller adapted to receive information corresponding to the at least one characteristic from the inspection device and to alter the molding device based on the information.

This application relates to an apparatus and method for providing snapshot action thermal infrared imaging within automated process control article inspection applications. More specifically, it pertains to the use of snapshot mode lead salt area-array imaging sensors (20) as the imaging front-end in high-speed machine vision inspection systems (12). the relatively low-cost, good measurement sensitivity at temperatures consistent with thermo-electric cooling means, and the ability to be operated in snapshot mode enables lead salt-based image acquisition sensors (20) to be used in a variety of automated process control and article inspection applications.

An optical metrology model for the structure is obtained. The optical metrology model comprising one or more profile parameters, one or more process parameters, and a dispersion. A dispersion function that relates the dispersion to at least one of the one or more process parameters is obtained. A simulated diffraction signal is generated using the optical metrology model and a value for the at least one of the process parameters and a value for the dispersion. The value for the dispersion is calculated using the value for the at least one of the process parameter and the dispersion function. A measured diffraction signal of the structure is obtained using an optical metrology tool. The measured diffraction signal is compared to the simulated diffraction signal to determine one or more profile parameters of the structure. The fabrication tool is controlled based on the determined one or more profile parameters of the structure.

A processing line includes a processing tool, a measurement tool, and an automatic process controller. The processing tool is adapted to process articles. The measurement tool is adapted to measure a characteristic of selected articles at a measurement frequency. The automatic process controller is adapted to change the measurement frequency based on a usage characteristic of the processing tool. A method for monitoring a processing tool includes processing a plurality of articles in the processing tool; measuring a characteristic of selected articles at a measurement frequency; and changing the measurement frequency based on a usage characteristic of the processing tool.

The invention relates to an automatic control bioreactor for breeding maggots and earthworms and a solid culture method. By controlling the temperature and humidity of the reactor, the growth of the maggots and the earthworms can be effectively promoted, and the growth period is shortened. Meanwhile, at the maturation period of the maggots and the earthworms, animals are promoted to move to a collector through illumination control and temperature adjustment so as to realize effective separation and reduce separation cost. The bioreactor comprises a reactor bottom, a reactor light transmission window, a reactor top, a charging part, a maggot and earthworm collector, a forced ventilation device, an automatic process controlling device and a heat exchanger. The method of the invention can realize automatic breeding of the maggots and the earthworms, and is applied to scale zooming; and the reactor has the characteristics of simple structure, convenient operation, low operating cost and environmental protection.

A method for automatic process control (APC) performance monitoring may include, but is not limited to: computing one or more APC performance indicators for one or more production lots of semiconductor devices; and displaying a mapping of the one or more APC performance indicators to the one or more production lots of semiconductor devices.

The invention relates to a process for removing copper slag and producing crude lead and lead copper matte by adopting melting treatment in a bottom-blowing melting bath and a device thereof. The process is characterized in that a bottom-blowing melting furnace for melting is utilized to remove copper slag, produce products, such as crude lead, lead copper matte, and the like, produce reasonable waste slag and manufacture iron calcium silicate slag in the melting process so that the furnace slag reaching the waste slag requirement is used as a raw material of a building material plant, and the lead copper matte can be used for producing products of crude copper, and the like. The process has high heat utilization rate, low energy consumption, high production efficiency, long service life, low product cost, good melting environmental protection and easy automatic process control.

The invention is an automatic debris separation process for effecting air separation of fragmented materials, such as size-reduced fiber feedstocks derived from textile wastes. The process uses high-velocity air within an elutriation assembly to efficiently remove ferrous and non-ferrous metal debris from recyclable polymer fibers. In particular, the process may employ automatic process control strategies to vary airflow within the elutriation assembly in process-controlled response to measured metal contamination, thereby ensuring that post-separation metal contamination is maintained at or below an upper contamination limit.

A method for detecting a degraded light source is provided. An exposure time associated with the light source is monitored. The exposure time is compared to at least one control limit. A degraded condition is identified based on the exposure time violating the control limit. A processing tool includes a stepper and an automatic process controller. The stepper has a light source and is adapted to illuminate a wafer for an exposure time. The automatic process controller is adapted to monitor the exposure time, compare the exposure time to at least one control limit, and identify a degraded condition based on the exposure time violating the control limit.