The present application provides a three-dimensional memory, a manufacturing method, and a storage
system. The memory includes: a stacked structure including a plurality of stepped levels, each stepped level including an insulating layer and a gate layer disposed on the insulating layer. The gate layer includes a gate conductor layer and a
gate dielectric layer that are adjacent to each other in a plane perpendicular to a first direction, and the first direction is the stacking direction of the stacked structure; a connection structure covers a partial surface of the
gate dielectric layer of a corresponding stepped level and is electrically connected to a portion of the gate conductor layer that is outside the
gate dielectric layer in a second direction, and the second direction is perpendicular to the first direction; a word line contact extends at least along the first direction to a connection conduction layer of the connection structure and is electrically connected to the corresponding gate conductor layer through the connection structure. The word line contact is located on a partial surface of the gate
dielectric layer and is electrically connected to the corresponding gate conductor layer through the connection structure of the corresponding stepped level, which can avoid word line bridging between different gate
layers and improve the reliability of the three-dimensional memory.