The invention is suitable for the technical field of semiconductors, and provides a GaN HEMT accelerated
life test method. The method comprises the following steps: selecting a plurality of GaN HEMT devices prepared in a same process, randomly grouping the plurality of GaN HEMT devices, and forming at least four service
life test groups, wherein each service
life test group comprises a variation temperature
test group and at least three fixed temperature test groups; applying the same test DC power to the GaN HEMT device in each fixed temperature
test group, testing electric parameters, and obtaining first
failure data; applying the same test DC power with the fixed temperature
test group to the GaN HEMT device in the variation temperature test group, testing the electric parameters, and obtaining second
failure data; and obtaining a temperature-service life curve according to the test temperature, the first
failure data and the second failure data. By adopting the GaN HEMT acceleratedlife test method, the consistence of the GaN HEMT accelerated life test can be verified, and the test credibility is improved.