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34results about How to "Variation in sensitivity" patented technology

Bandgap voltage reference circuit and method for producing a temperature curvature corrected voltage reference

A bandgap voltage reference circuit (1) comprises a bandgap cell (7) comprising first and second transistor stacks (8,9) of first transistors (Q1,Q2) and second transistors (Q3,Q4), respectively, arranged for developing a correcting PTAT voltage (DeltaVbe) across a primary resistor (R1) proportional to the difference in the base-emitter voltages of the first and second transistor stacks (8,9). A first current mirror circuit (10) provides PTAT currents (12 to 15) to the emitters of the first and second transistors (Q1 to Q4), and an operational amplifier (A1) maintains the voltage on the emitter of the first transistor (Q2) of the first transistor stack (8) at the same level as the resistor (R1) and sinks a PTAT current from the first current mirror circuit (10) from which the other PTAT currents are mirrored. The correcting PTAT voltage (DeltaVbe) developed across the primary resistor (R1) is scaled onto a secondary resistor (R3) and summed with the uncorrected base-emitter CTAT voltage of the first transistor (Q1) of the first transistor stack (8) for providing the voltage reference between an output terminal (5) and ground (3). A CTAT correcting current (Icr) is summed with the PTAT current (13) and applied to the emitter of the second transistor (Q3) of the second transistor stack (9) so that the correcting PTAT voltage (DeltaVbe) developed across the primary resistor (R1) has a TlnT curvature complementary to the TlnT temperature curvature of the uncorrected base-emitter CTAT voltage of the first transistor (Q1). Thus the reference voltage developed between the output terminal (5) and the ground (3) is temperature stable and TlnT temperature curvature corrected. The CTAT correcting current is derived from the base-emitter CTAT voltage of the first transistor (Q1) in a CTAT current generating circuit (12) through a second current mirror circuit (15).
Owner:ANALOG DEVICES INC

Solid-state image-sensing device

In a solid-state image-sensing device of the invention, for acquisition of sensed-image data, a photoelectric converter disconnecting switch is turned on to make a forcible reset switch perform resetting, then the voltage at the end of a logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is so controlled that the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof, and then an output commensurate with the amount of light incident on the photoelectric converter is delivered; for acquisition of noise data, the photoelectric converter disconnecting switch is turned on to make the forcible reset switch perform resetting, then the photoelectric converter disconnecting switch is turned off, then the voltage at the end of the logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is so controlled that the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof, and then an output unrelated to the amount of light incident on the photoelectric converter is delivered. With this sequence of operations, variations in sensitivity among individual pixels can be corrected for without irradiation with uniform light.
Owner:KONICA MINOLTA INC +1
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