64results about How to "Hysteresis characteristic" patented technology

An electronic circuit includes a primary magnetoresistance element for providing a first output signal proportional to a magnetic field. The primary magnetoresistance element has a primary maximum response axis. The primary magnetoresistance element also has a hysteresis characteristic. The electronic circuit also includes a reset conductor disposed proximate to the magnetoresistance element. The electronic circuit also includes a secondary magnetic field sensing element for providing a second output signal proportional to a magnetic field. The secondary magnetic field sensing element has a secondary maximum response axis, which, in some embodiments, is substantially perpendicular to the primary maximum response axis. In operation, the primary magnetoresistance is reset in accordance with an excessive magnetic field sensed by the secondary magnetic field sensing element.

A semiconductor device includes: a ferroelectric capacitor that is provided above a base substrate and includes a first electrode, a ferroelectric film provided on the first electrode and a second electrode provided on the ferroelectric film; a stopper film that covers a top surface of the second electrode of the ferroelectric capacitor; a hydrogen barrier film that covers a top surface and a side surface of the stopper film and a side surface of the ferroelectric capacitor; an interlayer dielectric film that covers the hydrogen barrier film and the base substrate; a contact hole that penetrates the interlayer dielectric film, the hydrogen barrier film and the stopper film and exposes the second electrode; a barrier metal that covers the second electrode exposed in the contact hole and an inner wall surface of the contact hole and is composed of a conductive material having hydrogen barrier property; and a plug conductive section that is embedded in the contact hole and conductively connects to the barrier metal, wherein the stopper film is formed from a dielectric material having a smaller etching rate than an etching rate of the interlayer dielectric film.

A power-on reset circuit comprises a power supply voltage detection circuit that detects a rise of a power supply voltage and that changes a logic level of a first internal node; a capacitor charge / discharge circuit that charges and discharges a capacitor according to the first internal node level and that in an event that the power supply voltage is reduced, discharges the capacitor to follow the event; and a reset pulse generation circuit that before the power supply voltage rises higher than the predetermined voltage, outputs a first output voltage to an output node and that after the power supply voltage has risen higher than the predetermined voltage, outputs a second output voltage to the output node upon detecting that a charge level of the capacitor has become higher than a charge level detection voltage.

An electronic circuit includes a magnetoresistance element for providing an output signal proportional to a magnetic field. The magnetoresistance element also has a hysteresis characteristic. The electronic circuit also includes at least one of a reset conductor or a bias conductor disposed proximate to the magnetoresistance element. For embodiments having a reset conductor, the electronic circuit is configured to generate a reset current carried by the reset conductor in response to the comparison. In response to the reset current, the reset conductor is configured to generate a reset magnetic field at the magnetoresistance element to temporarily force the magnetoresistance element to a saturation region of the hysteresis characteristic.

A ferroelectric memory device includes first electrodes, second electrodes arranged in a direction which intersects the first electrodes, and ferroelectric films disposed in at least intersecting regions of the first electrodes and the second electrodes. Capacitors formed of the first electrodes, the ferroelectric films, and the second electrodes are disposed in a matrix. A ferroelectric phase and a paraelectric phase are mixed in each of the ferroelectric films.

The present invention provides a control device capable of improving hysteresis characteristics of a voice coil motor (31) and attaining a suitable lens position without complicating the structure of the control device. As solving means of the invention, a voice coil motor control device (30) includes a driving current control part (34) that controls a driving current supplied to the voice coil motor (31) in accordance with a driving pulse subjected to pulse width modulation, and a driving pulse control part (32) that divides a drive period of the voice coil motor (31) into a movement period and a holding period, and controls the driving pulse by changing the duty ratio of the driving pulse during the movement period in accordance with a duty setting value and fixing the duty ratio of the driving pulse during the holding period to the duty setting value.

A pressure sensor includes: a casing; a sensor chip with a gauge resistor; a boss disposed on the gauge resistor; a metallic diaphragm capable of distorting in accordance with a pressure; and a load transmission member disposed between the metallic diaphragm and the boss. The casing accommodates the sensor chip, the boss and the load transmission member. The casing is covered with the metallic diaphragm. The pressure applied to the diaphragm is detected such that the load corresponding to the pressure is applied to the gauge resistor through the metallic diaphragm, the load transmission member and the boss so that the pressure is measured on the basis of a resistance change of the gauge resistor. The gauge resistor is larger than the boss.

A hydraulic servovalve having two stages and feedback members in which the movable power distribution member has clamp means for clamping the feedback member, while allowing a clamped portion of the feedback member at least one freedom of movement relative to the movable distribution member.