To provide a gate insulating material which has high
chemical resistance, is superior in coatability of a
resist and an
organic semiconductor coating liquid, and has small
hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an
epoxy group-containing
silane compound as a copolymerization component.A gate insulating material containing a polysiloxane having, as copolymerization components, at least a
silane compound represented by the general formula (1):R1mSi(OR2)4-m (1),wherein R1 represents
hydrogen, an
alkyl group, a cycloalkyl group, a heterocyclic group, an
aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R1s are present, R1s may be the same or different, R2 represents an
alkyl group or a cycloalkyl group and in the case where a plurality of R2s are present, R2s may be the same or different, and m represents an integer of 1 to 3,and an
epoxy group-containing
silane compound represented by the general formula (2):R3nR4lSi(OR5)4-n-1 (2),wherein R3 represents an
alkyl group or a cycloalkyl group having one or more
epoxy groups in a part of a chain and in the case where a plurality of R3s are present, R3s may be the same or different, R4 represents
hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an
aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R4s are present, R4s may be the same or different, R5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R5s are present, R5s may be the same or different, l represents an integer of 0 to 2, and n represents 1 or 2 (however, l+n≦3).