A method of manufacturing a semiconductor device includes: forming a transistor with first and second ends 3a and 3b of a main current path, and a control electrode 5, covering the transistor with a first insulating film 6, forming first through third openings that expose the first and second ends 3a and 3b and the control electrode 5, and burying or filling first to third conductive materials 7a-7c in the first to third openings respectively, forming the ferroelectric capacitor by laminating the first electrode 8, the ferroelectric film 9, and the second electrode 10, laminating the second insulating film 11 and the moisture diffusion protective film 12, forming the fourth opening 13c to expose the third conductive material 7c through the second insulating film 11 and the moisture diffusion protective film 12, and forming a first wiring layer 14c, which has electrical connection with the control electrode 5.