23 results about "Dielectric gas" patented technology

The present invention belongs to the field of atmospheric pressure glow discharge and relates to a low-temperature plasma processing device controlled by a transverse magnetic field. The device comprises a power supply unit, a discharge unit with a built-in high-voltage spike electrode, an annular ground electrode, and an electromagnetic coil, a gas unit, a gas control unit, a magnetostrictive unit, and a sample unit for holding a treatment liquid or collecting gaseous products processed in the discharge unit. The discharge end of the high-voltage spike electrode is a pointed tip, and the radially inner side of the annular ground electrode is prefabricated with an axially symmetrical cut angle. A magnetic core is provided on the inner surface of the outer cylinder, and the magnetic core includes a first annular magnetic core and a second annular magnetic core. The device improves the efficiency of generating high-energy active particles in the low-temperature plasma by significantly increasing the discharge area. It can either utilize the discharge process of a specific dielectric gas to generate high-energy active particles for subsequent liquid treatment, or directly mix the gas to be treated with the dielectric gas in a certain proportion in the gas unit and then complete the treatment directly in the discharge unit.

The utility model discloses a low-temperature butane storage tank which comprises an outer tank body and an inner tank body arranged in the outer tank body, and further comprises a partition mechanism arranged between the outer tank body and the inner tank body, and the partition mechanism divides the interval between the outer tank body and the inner tank body into an upper independent space and a lower independent space. The independent space located on the upper portion is provided with cold insulation glass wool, and the independent space located on the lower portion is provided with cold insulation expanded perlite. The partition mechanism is additionally arranged between the outer tank body and the inner tank body, an original gas free circulation space is divided into two parts in the vertical direction, evaporated gas is restrained on the upper portion of the partition mechanism, and the lower portion of the partition mechanism does not have the condition for generating condensate due to the fact that medium gas does not exist. Condensed accumulated liquid is prevented from flowing to the bottom of the inner tank body, and the potential damage risk of the bottom structure of the inner tank body is avoided.

Embodiments described herein relate to various structures, integrated assemblies, and memory devices. In some embodiments, an apparatus includes a first bit line structure and a hard mask structure that is directly on the first bit line structure. The apparatus includes a second bit line structure and an elongated, vertically-oriented contact structure that is directly on the second bit line structure. The apparatus includes an elongated, vertically-oriented dielectric gas region that is between the first bit line structure and the second bit line structure and that includes an upper end region that overlaps the hard mask structure and the elongated, vertically-oriented contact structure.

A tester apparatus is described of the kind having contact with terminals on a wafer for purposes of testing the wafer. A dielectric gas is used to reduce arcing between the contact. A stationary structure and a portable structure have complimentary gas interfaces that engage when the portable structure engages with the stationary structure. A gas box has a channeling block connected to a dielectric gas pressure regulator and a nitrogen gas pressure regulator and connected to a gas supply passage to selectably provide nitrogen or dielectric gas to the gas supply passage. A tray has a portion that is electrically conductive to make contact with a rear wafer terminal, vacuum passages, and each vacuum passage has an enlarged section to reduce.

The invention relates to an installation for distributing a gaseous electrically insulating mixture, comprising a first vessel (1) intended to contain an insulating fluid in the liquid state, first heating means (10) configured to heat the insulating fluid so that said first vessel (1) produces a gas phase of the insulating fluid, a second vessel (2) configured to produce a gas phase of a carrier fluid from the second vessel (2), a first transfer circuit (6), and second heating means (21, 22) configured to heat the gas phase of the insulating fluid.

A tester apparatus is described of the kind having contact with terminals on a wafer for purposes of testing the wafer. A dielectric gas is used to reduce arcing between the contact. A stationary structure and a portable structure have complimentary gas interfaces that engage when the portable structure engages with the stationary structure. A gas box has a channeling block connected to a dielectric gas pressure regulator and a nitrogen gas pressure regulator and connected to a gas supply passage to selectably provide nitrogen or dielectric gas to the gas supply passage. A tray has a portion that is electrically conductive to make contact with a rear wafer terminal, vacuum passages, and each vacuum passage has an enlarged section to reduce.

Some implementations described herein provide techniques and semiconductor devices in which a buffer region is formed under a source / drain region of a device. The buffer region is configured to reduce, prevent, and / or block migration of dopants from the source / drain region to other areas of the device, such a mesa region of an adjacent fin structure. In some implementations, a sidewall layer is between the buffer region and the mesa region. Additionally, or alternatively, a dielectric region including a dielectric gas may be between the buffer region and the source / drain region.

A tester apparatus is described of the kind having contact with terminals on a wafer for purposes of testing the wafer. A dielectric gas is used to reduce arcing between the contact. A stationary structure and a portable structure have complimentary gas interfaces that engage when the portable structure engages with the stationary structure. A gas box has a channeling block connected to a dielectric gas pressure regulator and a nitrogen gas pressure regulator and connected to a gas supply passage to selectably provide nitrogen or dielectric gas to the gas supply passage. A tray has a portion that is electrically conductive to make contact with a rear wafer terminal, vacuum passages, and each vacuum passage has an enlarged section to reduce.

Disclosed is a test device that contacts a terminal on a wafer to test the wafer. The dielectric gas is used to reduce arcing between the contacts. The fixed structure and the movable structure have complementary gas interfaces that engage when the movable structure is engaged with the fixed structure. The gas cartridge has a channel block connected to the dielectric gas pressure regulator and the nitrogen pressure regulator and to the gas supply channel to selectively provide nitrogen or dielectric gas to the gas supply channel. The tray has a conductive portion to contact the rear wafer terminal, and vacuum channels, each having an enlarged portion to reduce arc.

A high-voltage solid-state switching assembly for use in an electric power transmission, subtransmission, or distribution network. The assembly includes a press-pack semiconductor switching stack including solid-state switching devices connected in series. The assembly further includes a pressure-distribution mechanism including a pressure cone, compression plate, and spring system configured to maintain substantially uniform contact pressure across the press-pack semiconductor switching stack during thermal and electrical cycling. The assembly further includes a dielectric insulation chamber containing an insulating medium selected from air, nitrogen, insulating oil, fluorinated dielectric gas, SF6-free insulating gas, and a combination thereof, the dielectric insulation chamber being dimensioned to provide required creepage and clearance distances for the intended system voltage. The assembly further includes a thermal-management arrangement including at least one of a heat sink, external fin, radiator plate, and convection-promoting channel configured to dissipate heat generated by the press-pack semiconductor switching stack during operation.

Disclosed is a test device that contacts a terminal on a wafer to test the wafer. The dielectric gas is used to reduce arcing between the contacts. The fixed structure and the movable structure have complementary gas interfaces that engage when the movable structure is engaged with the fixed structure. The gas cartridge has a channel block connected to the dielectric gas pressure regulator and the nitrogen pressure regulator and to the gas supply channel to selectively provide nitrogen or dielectric gas to the gas supply channel. The tray has a conductive portion to contact the rear wafer terminal, and vacuum channels, each having an enlarged portion to reduce arc.

Disclosed is a test device that contacts a terminal on a wafer to test the wafer. The dielectric gas is used to reduce arcing between the contacts. The fixed structure and the movable structure have complementary gas interfaces that engage when the movable structure is engaged with the fixed structure. The gas cartridge has a channel block connected to the dielectric gas pressure regulator and the nitrogen pressure regulator and to the gas supply channel to selectively provide nitrogen or dielectric gas to the gas supply channel. The tray has a conductive portion to contact the rear wafer terminal, and vacuum channels, each having an enlarged portion to reduce arc.

Disclosed is a test device that contacts a terminal on a wafer to test the wafer. The dielectric gas is used to reduce arcing between the contacts. The fixed structure and the movable structure have complementary gas interfaces that engage when the movable structure is engaged with the fixed structure. The gas cartridge has a channel block connected to the dielectric gas pressure regulator and the nitrogen pressure regulator and to the gas supply channel to selectively provide nitrogen or dielectric gas to the gas supply channel. The tray has a conductive portion to contact the rear wafer terminal, and vacuum channels, each having an enlarged portion to reduce arc.

A tester apparatus is described of the kind having contact with terminals on a wafer for purposes of testing the wafer. A dielectric gas is used to reduce arcing between the contact. A stationary structure and a portable structure have complimentary gas interfaces that engage when the portable structure engages with the stationary structure. A gas box has a channeling block connected to a dielectric gas pressure regulator and a nitrogen gas pressure regulator and connected to a gas supply passage to selectably provide nitrogen or dielectric gas to the gas supply passage. A tray has a portion that is electrically conductive to make contact with a rear wafer terminal, vacuum passages, and each vacuum passage has an enlarged section to reduce.

Disclosed is a test device that contacts a terminal on a wafer to test the wafer. The dielectric gas is used to reduce arcing between the contacts. The fixed structure and the movable structure have complementary gas interfaces that engage when the movable structure is engaged with the fixed structure. The gas cartridge has a channel block connected to the dielectric gas pressure regulator and the nitrogen pressure regulator and to the gas supply channel to selectively provide nitrogen or dielectric gas to the gas supply channel. The tray has a conductive portion to contact the rear wafer terminal, and vacuum channels, each having an enlarged portion to reduce arc.

A high-voltage solid-state switching assembly for use in an electric power transmission, subtransmission, or distribution network. The assembly includes a press-pack semiconductor switching stack including solid-state switching devices connected in series. The assembly further includes a pressure-distribution mechanism including a pressure cone, compression plate, and spring system configured to maintain substantially uniform contact pressure across the press-pack semiconductor switching stack during thermal and electrical cycling. The assembly further includes a dielectric insulation chamber containing an insulating medium selected from air, nitrogen, insulating oil, fluorinated dielectric gas, SF₆-free insulating gas, and a combination thereof, the dielectric insulation chamber being dimensioned to provide required creepage and clearance distances for the intended system voltage. The assembly further includes a thermal-management arrangement including at least one of a heat sink, external fin, radiator plate, and convection-promoting channel configured to dissipate heat generated by the press-pack semiconductor switching stack during operation.

A type of tester apparatus is described that tests wafers by contacting terminals on the wafer. A dielectric gas is used to reduce arcing between the contacts. The stationary and portable structures have complementary gas connection portions that engage when the portable structure engages the stationary structure. The gas box has a channeling block connected to a dielectric gas pressure regulator and a nitrogen gas pressure regulator and to gas supply passages to selectively supply nitrogen or dielectric gas to the gas supply passages. The tray is conductive and has a portion that contacts the back wafer terminals and a vacuum passage, each vacuum passage having an enlarged section to reduce arcing.

Disclosed is a test device that contacts a terminal on a wafer to test the wafer. The dielectric gas is used to reduce arcing between the contacts. The fixed structure and the movable structure have complementary gas interfaces that engage when the movable structure is engaged with the fixed structure. The gas cartridge has a channel block connected to the dielectric gas pressure regulator and the nitrogen pressure regulator and to the gas supply channel to selectively provide nitrogen or dielectric gas to the gas supply channel. The tray has a conductive portion to contact the rear wafer terminal, and vacuum channels, each having an enlarged portion to reduce arc.

Embodiments of the present disclosure relate to switchgear. A gas-insulated, air-blown switchgear is provided for operation within a sealed, airtight enclosure of power distribution switchgear. The sealed, airtight enclosure is filled with a dielectric gas having a lower global warming potential than SF6. The switchgear offers at least one of the advantages of improved compactness, minimized electrical stress, maximized heat dissipation, and reduced environmental impact.

A halogen-free, in particular fluorine-free, dielectric gas (10) for use in high-voltage applications, in particular for preventing electric discharges, is proposed, the dielectric gas comprising: a first mass fraction (w1) of nitrogen gas (N2); and a second mass fraction (w2) of oxygen gas (O2), the first mass fraction (w1) being below 80 wt%.

A tester apparatus is described of the kind having contact with terminals on a wafer for purposes of testing the wafer. A dielectric gas is used to reduce arcing between the contact. A stationary structure and a portable structure have complimentary gas interfaces that engage when the portable structure engages with the stationary structure. A gas box has a channeling block connected to a dielectric gas pressure regulator and a nitrogen gas pressure regulator and connected to a gas supply passage to selectably provide nitrogen or dielectric gas to the gas supply passage. A tray has a portion that is electrically conductive to make contact with a rear wafer terminal, vacuum passages, and each vacuum passage has an enlarged section to reduce.

Embodiments described herein relate to various structures, integrated assemblies, and memory devices. In some embodiments, a memory device includes a memory block region having a pillar structure, a first word line structure that extends away from the pillar structure along a first level, a second word line structure that extends away from the pillar structure along a second level, and a dielectric gas region along a third level that is between facing surfaces of the first word line structure and the second word line structure. The memory device includes a periphery region proximate the memory block region. The periphery region includes a tiered structure that includes a first nitride layer formed along the first level, a second nitride layer formed along the second level, and a semiconductor layer formed along the third level.