8 results about "Graphical simulation" patented technology

The invention discloses a graphical simulation method, device and equipment for a signal flow and a storage medium. The method comprises the following steps: detecting a coupling relationship between to-be-simulated components, and when the coupling relationship between the to-be-simulated components is cross-domain coupling, generating an original signal flow based on the to-be-simulated components and a side structure object connected with the to-be-simulated components; carrying out compiling and redundancy elimination on the original signal flow by adopting a sparse Boolean matrix to obtain a preprocessed signal flow; loop detection is carried out on the preprocessed signal flow, when a loop is detected, loop breaking processing is carried out on the detected loop, and a target signal flow is generated; graphical simulation is completed on the basis of the target signal flow, the multi-field coupling relation in the simulation model is automatically analyzed on the premise of not depending on manual intervention, the execution sequence conforming to physical constraints is generated, and the efficiency and accuracy of simulation modeling are effectively improved.

The present invention provides a method for automatically constructing a mathematical simulation software framework for an aircraft, belonging to the technical field of system simulation, and comprising the following steps: S1: encapsulate each discipline model and store the information in a model library; S2: read a graphical simulation process description file; S3: perform DTD constraint verification on the file; if the file is invalid, execute S13; if it is valid, execute S4; S4: parse the file; S5: connect to the model library, if the connection fails, execute S13; if the connection is successful, execute S6; S6: obtain the information parsed in S3 from the model library; S7: check whether the input and output match; S8: if the connection rules are not met, execute S13; if they are met, execute S9; S9: determine the execution order of each model; S10: generate a basic simulation program framework; S11: add call codes for model initialization functions; S12: add call codes for model running functions to obtain a mathematical simulation software, solving the problem of slow framework construction speed in the prior art.

This invention relates to the field of photovoltaic cell technology, and discloses a graphical simulation method and related equipment for heterojunction cells. The method includes acquiring measurement data of the cell grid lines; constructing a simulation model of the heterojunction cell based on the acquired grid line measurement data; optimizing the number of front and back grid lines according to the simulation model, and determining the final grid line layout based on the optimization results. The simulation model, built based on accurate grid line measurement data, can accurately simulate the performance of the cell under different grid line layouts. By optimizing the number of front and back grid lines, the optimal grid line layout can be accurately found, thereby maximizing the photoelectric conversion efficiency and output power of the cell.

The present application relates to the field of power management, in particular to a voltage out-of-limit diagnosis and treatment method and system based on multi-level cooperation; the multi-source heterogeneous voltage data from multiple metering points in the power grid are standardized to obtain standardized voltage data; based on the standardized voltage data, the power supply path along the transformer substation, feeder, distribution transformer and user is judged step by step, and the voltage out-of-limit cause is output; based on the voltage out-of-limit cause, an optimized treatment scheme is generated; the optimized treatment scheme includes constructing a three-level problem list covering the bus, feeder and transformer area, and verifying at least one of the distribution transformer gear adjustment and bus voltage target value optimization based on the graphical simulation environment to output the optimized treatment scheme; the present application solves the problems of high misjudgment rate, low multi-level traceability efficiency, lack of cooperative optimization of treatment strategy and insufficient system compatibility caused by data heterogeneity in the prior art.

The present invention provides an optical proximity effect correction method and system and a mask, the method comprising: classifying the area of ​​the current layer in the original design graphic of the lithography according to the graphics of the previous layer of the current layer to obtain the category to which the area belongs, the category to which the area belongs includes the overlapping area in the current layer in the original design graphic that overlaps with the previous layer up and down and the non-overlapping area that does not overlap; setting priorities for areas of each category, wherein the priority of the overlapping area is higher than the priority of the non-overlapping area; setting multiple target points at the edge of the original design graphic, the density of the target points set at the edge of the overlapping area is greater than the density of the target points set in the non-overlapping area; obtaining a correction graphic of the original design graphic according to an OPC model, and simulating it to obtain a graphic simulation result; calculating the difference between the graphic simulation result at each target point and the original design graphic; and adjusting the correction graphic according to the difference and the weight of the target point.

The application discloses a kind of graphical simulation method of signal flow, device and equipment and storage medium.The method is by detecting the coupling relationship between the component to be simulated, when the coupling relationship between the component to be simulated is cross-domain coupling, then based on the component to be simulated and the edge structure object connected to the component to be simulated, generate original signal flow;Sparse boolean matrix is used to compile and eliminate redundancy to original signal flow, obtain preprocessed signal flow;Loop detection is carried out on preprocessed signal flow, and when loop is detected, the detected loop is broken, to generate target signal flow;Based on target signal flow, graphical simulation is completed, realizes that in the premise of not depending on manual intervention, automatically analyze the multi-domain coupling relationship in simulation model, generate the execution order in line with physical constraint, effectively improve the efficiency and accuracy of simulation modeling.

The invention relates to an optical proximity correction method and system, a layout, electronic equipment and a storage medium. The optical proximity correction method comprises the following steps: acquiring a target graph; performing optical proximity correction processing on the target graph to obtain a corrected graph; chamfering the corrected graph to obtain a simulation graph; the simulation graph is output when the simulation graph meets the output standard, and after the target graph is corrected to obtain the corrected graph, each corner of the corrected graph is chamfered to obtain the simulation graph, so that the chamfering precision of the output simulation graph is improved.

The application discloses a fluorine attack degree monitoring method and system, and belongs to the technical field of semiconductors. The fluorine attack degree monitoring method comprises the following steps: providing at least one monitoring wafer; forming a plurality of simulation patterns on the substrate of the monitoring wafer, wherein the thickness and / or the topography of different simulation patterns are different; obtaining initial values for measuring the surface roughness of each simulation pattern by using an optical measurement technology; performing a tungsten deposition process to be monitored by using a fluorine-containing gas; obtaining surface values for measuring the surface roughness of the tungsten layer on each simulation pattern by using the optical measurement technology; and evaluating the fluorine attack degree according to the initial values and the surface values of each simulation pattern. By forming simulation patterns with different topographies and / or thicknesses on the monitoring wafer, the actual situation of the surface film layer distribution of a product wafer, such as the distribution of film layer thickness and patterns in different regions, is simulated, and fast and non-destructive quantitative evaluation is realized by using the optical measurement technology.