3 results about "Graphical simulation" patented technology

This invention relates to the field of photovoltaic cell technology, and discloses a graphical simulation method and related equipment for heterojunction cells. The method includes acquiring measurement data of the cell grid lines; constructing a simulation model of the heterojunction cell based on the acquired grid line measurement data; optimizing the number of front and back grid lines according to the simulation model, and determining the final grid line layout based on the optimization results. The simulation model, built based on accurate grid line measurement data, can accurately simulate the performance of the cell under different grid line layouts. By optimizing the number of front and back grid lines, the optimal grid line layout can be accurately found, thereby maximizing the photoelectric conversion efficiency and output power of the cell.

The present application relates to the field of power management, in particular to a voltage out-of-limit diagnosis and treatment method and system based on multi-level cooperation; the multi-source heterogeneous voltage data from multiple metering points in the power grid are standardized to obtain standardized voltage data; based on the standardized voltage data, the power supply path along the transformer substation, feeder, distribution transformer and user is judged step by step, and the voltage out-of-limit cause is output; based on the voltage out-of-limit cause, an optimized treatment scheme is generated; the optimized treatment scheme includes constructing a three-level problem list covering the bus, feeder and transformer area, and verifying at least one of the distribution transformer gear adjustment and bus voltage target value optimization based on the graphical simulation environment to output the optimized treatment scheme; the present application solves the problems of high misjudgment rate, low multi-level traceability efficiency, lack of cooperative optimization of treatment strategy and insufficient system compatibility caused by data heterogeneity in the prior art.

The application discloses a fluorine attack degree monitoring method and system, and belongs to the technical field of semiconductors. The fluorine attack degree monitoring method comprises the following steps: providing at least one monitoring wafer; forming a plurality of simulation patterns on the substrate of the monitoring wafer, wherein the thickness and / or the topography of different simulation patterns are different; obtaining initial values for measuring the surface roughness of each simulation pattern by using an optical measurement technology; performing a tungsten deposition process to be monitored by using a fluorine-containing gas; obtaining surface values for measuring the surface roughness of the tungsten layer on each simulation pattern by using the optical measurement technology; and evaluating the fluorine attack degree according to the initial values and the surface values of each simulation pattern. By forming simulation patterns with different topographies and / or thicknesses on the monitoring wafer, the actual situation of the surface film layer distribution of a product wafer, such as the distribution of film layer thickness and patterns in different regions, is simulated, and fast and non-destructive quantitative evaluation is realized by using the optical measurement technology.