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351 results about "Mount used" patented technology

Zero force heat sink

A heat sink in a heat transfer relationship with a substrate such as an integrated chip, chip carrier, or other electronic package. The heat sink is connected to a frame which is connected to a printed circuit board or other suitable support on which the substrate is positioned. The heat sink, which extends through an aperture in the frame is coupled to a surface of the substrate. The heat sink is mechanically decoupled from the substrate. Large heat sinks may be thermally connected to surface mount substrates mounted using technologies such as ceramic ball or column grid arrays, plastic ball or column grid arrays, or solder balls or columns. The heat sink is attached coaxially through the aperture to the substrate. After assembly and lead/tin or other metallic surface mount interconnects are relaxed such that the substrate and is completely supported by the frame and the heat sink imparts zero or nearly zero downward force. Because the heat sink moves freely within the aperture during assembly, the heat sink package is useful for a variety of different substrates. Preferably, the frame is a plate and a plurality of studs. The plate material are selected to match the thermal expansion of the underlying support, and the stud material matched the thermal expansion of the substrate. Thus, the frame construction allows matching expansion and contraction of the assembly to the underlying substrate and support.
Owner:IBM CORP

Semiconductor light- emitting element, semiconductor light- emitting device, method for producing semiconductor light- emitting element, method for producing semiconductor light- emitting device, illumination device using semiconductor light-emitting device, and electronic apparatus

ActiveUS20120138999A1Large light emission outputLow forward voltage VfSolid-state devicesSemiconductor/solid-state device manufacturingReflective layerLight emitting device
The disclosed semiconductor light-emitting element is configured from layering an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (160); and a first electrode (200), which is the cathode, is formed on the p-type semiconductor layer (160). Also, between the p-type semiconductor layer (160) and a reflecting layer (220b), the first electrode (200) is provided with a crystalline first transparent electrode layer (210) and a non-crystalline second transparent electrode layer (220a). The crystalline first transparent electrode layer (210) increases adhesion with the p-type semiconductor layer (160), and the non-crystalline second transparent electrode layer (220a) suppresses delamination of the reflecting layer (220b). Also, the first transparent electrode layer (210) and the second transparent electrode layer (220a) transmit light emitted from the light-emitting layer and suppress degradation of reflective characteristics. In this way, delamination of the reflecting layer and degradation of reflective characteristics are suppressed in a semiconductor light-emitting element mounted using flip-chip (FC) mounting.
Owner:TOYODA GOSEI CO LTD
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