The invention discloses a detecting structure, a forming method and a detecting method. The detecting structure comprises a plurality of polygon active areas, a shallow
channel isolation structure, an
ion mixing area, a
gate oxide layer, a
polycrystalline silicon layer, a
dielectric layer, a first conducting plug, a second conducting plug, a first
metal layer and a second
metal layer, wherein the polygon active areas are positioned in a first area of a
semiconductor substrate; the shallow
channel isolation structure is positioned in the first area of the
semiconductor substrate and is formed surrounding the active areas; the
ion mixing area is positioned in a second area of the
semiconductor substrate; the
gate oxide layer covers the active area and the shallow
channel isolation structure; the
polycrystalline silicon layer is positioned on the surface of the
gate oxide layer; the
dielectric layer covers the semiconductor substrate and the
polycrystalline silicon layer; the first conducting plug is positioned on the surface of the polycrystalline
silicon layer; the second conducting plug is positioned on the surface of the
ion mixing layer, and the first
metal layer and the second metal layer are positioned on the surface of the
dielectric layer. According to the detecting structure disclosed by the invention, whether a corner of the active area of the detecting structure is damaged or not can be detected by measuring the puncture
voltage of the gate
oxide layer for one time, and thus whether a corner of an active area of a to-be-detected
semiconductor device is damaged or not can be judged.