The invention relates to an MEMS (micro-electromechanical system) chip and a wafer level encapsulation cover plate grounding method of the MEMS chip. The MEMS chip consists of a cover plate, a cover plate insulating layer, an MEMS structure layer, a conducting welding flux layer, a bottom plate insulating layer and a bottom plate, wherein a metal conducting wire is arranged on the cover plate, the cover plate is electrically connected with the MEMS structure layer through the metal conducting wire, a pressure welding block is arranged on the bottom plate insulating layer, and the pressure welding block is electrically connected with the MEMS structure layer through a grounding conducting wire. In the subsequent encapsulation process, the cover plate grounding goal can be realized only when the pressure welding block is connected onto an encapsulation carrier. The cover plate grounding method is characterized in that firstly, the maskless lithography is carried out, the MEMS structure layer is exposed, then, the metal conducting wire is sputtered on the cover plate and the MEMS structure layer, and the cover plate and the MEMS structure layer are electrically connected through the metal conducting wire. Therefore, the cover plate and the pressure welding block realize the electric connection through the metal conducting wire and the grounding conducting wire, and the goal of the cover plate grounding is reached. The method provided by the invention has the advantages that the total thickness of the chip is reduced, the miniaturization encapsulation is convenient, the metal conducting wire is formed through deposition by a sputtering method, the cost is low, and the wire loosing cannot easily occur.