47results about How to "Formed easily and efficiently" patented technology

The present invention can provide a resist cover film-forming material which is suitably used for a resist cover film for liquid immersion exposure and can transmit ArF excimer laser lights and provide a process for forming a resist pattern using the resist cover film-forming material. The resist cover film-forming material contains a resin having an alicyclic skeleton at any of the main chain and the side chains; it is nonphotosensitive and is used in forming a resist cover film that covers a resist film during liquid immersion exposure. The process for forming of a resist pattern includes forming a resist film on a surface of a workpiece to be processed, forming a resist cover film on the resist film using the resist cover film-forming material of the present invention, irradiating the resist film with exposure light through the resist cover film by liquid immersion exposure, and developing the resist film.

Provided is a three-dimensional object formation method including: a first step of forming a film by delivering a first liquid containing at least water and a hydrogel precursor: and a second step of curing the film formed in the first step, wherein the first step and the second step are repeated a plurality of times.

A magnetic sensor includes a single substrate, a conventional GMR element formed of a spin-valve film including a single-layer-pinned fixed magnetization layer, and a SAF element formed of a synthetic spin-valve film including a plural-layer-pinned fixed magnetization layer. When the spin-valve film intended to act as the conventional GMR element and the synthetic spin-valve film intended to act as the SAF element are subjected to the application of a magnetic field oriented in a single direction at a high temperature, they become giant magnetoresistive elements whose magnetic-field-detecting directions are antiparallel to each other. Since films intended to act as the conventional GMR element and the SAF element can be disposed close to each other, the magnetic sensor which has giant magnetoresistive elements whose magnetic-field-detecting directions are antiparallel to each other can be small.

The invention provides a film forming method that improves throughput in a preliminary discharge. The film forming method according to the present invention can include a preliminary discharge step of preliminarily discharging liquid droplets from a head and a liquid droplet discharge step of relatively moving the head and the work to discharge the liquid droplets onto the surface of the work from the head. The preliminary discharge of the liquid droplets is carried out while the head and the work are moved relative to each other.

A probe tip section of an electrical test probe has a laminated structure consisting of a first deposition portion and a second deposition portion covering the first deposition portion, and by the laminated structure, a maximum cross-sectional area portion at which the cross-sectional area of the probe tip section is increased to a base portion is provided between a tip end of the probe tip section and the base portion in the probe tip section. At the maximum cross-sectional area portion, a dimension in the X direction as seen on a flat surface perpendicular to a protruding direction of the probe tip section is increased in a one-dimensional way, and in addition, a dimension in the Y direction perpendicular to the X direction is increased from the tip end toward the base portion, as a result of which the cross-sectional area of the probe tip section can be increased in a two-dimensional way. Thus, the cross-sectional area at the maximum cross-sectional area portion reaching the base portion of the probe tip section can be made to be larger than in the conventional case, and along with the increase of the cross-sectional area, the stress acting on the base portion can be lowered.

In the zinc oxide film forming apparatus (1), the deposit containing zinc oxide is formed on the conductive layer of the resin substrate (9) by electrodeposition in the deposition part (2), and the resin substrate (9) is carried to the applying part (4). Subsequently, the film forming material which is in liquid or paste form and contains particles of zinc oxide and solvent is applied onto the conductive layer, and then the solvent is removed from the film forming material on the conductive layer by volatilization. It is therefore possible to easily and efficiently form the porous zinc oxide film which has superior adhesion to the conductive layer of the resin substrate (9).

An interleukin 15 (IL-15) protein complex is provided. The IL-15 protein complex includes soluble fusion proteins (I) and (II), wherein the fusion protein (I) is an IL-15 polypeptide or a functional fragment thereof, and the soluble fusion protein (II) is an IL-15Rα polypeptide or a functional fragment thereof. The soluble fusion protein (I) has at least one amino acid residue mutated to a cysteine (Cys) residue, which pairs with a corresponding mutated Cys residue on the soluble fusion protein (II), or vice versa, to form one or more disulfide bonds. The IL-15 protein complex can be used for tumor therapy.

A steering wheel includes a ring-shaped rim is to be gripped by a driver (the rim includes a rim core and a rim molding portion covering the rim core), a boss disposed at the center of the rim, plural spokes connecting the rim with the boss, an arm whose base end portion is integrated with the rim core and that is extended toward the inside of the rim core in a cantilever manner, and a vibration generator attached to the arm for generating vibrations that are to be transmitted to the rim through the arm.

A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a member 11 to be etched, which is disposed within a chamber 1 and is formed of a material containing an element capable of forming a compound with Si, while keeping the member 11 at a relatively high temperature, to form a gas of a precursor 24, which is a compound of the material and the halogen; holding a substrate 3 accommodated within the chamber 1 at a relatively low temperature, with the Si interface of the substrate 3 being exposed, to adsorb the precursor 24 onto the Si interface of the substrate 3; and then allowing the radical of the halogen gas to act on the precursor 24 adsorbed onto the Si interface to reduce the precursor 24, thereby producing a compound of the material and Si.