The application provides a modeling method of SOI FinFET devices suitable for various reliability effect
coupling researches, a three-dimensional structure model of a FinFET device is obtained by using Sentaurus TCAD
software and structural parameters modeling;
simulation of
total dose effect and
simulation of
hot carrier effect are carried out on the three-dimensional structure model, and a second electrical characteristic parameter after
simulation coupling effect is obtained; the three-dimensional structure model is changed by using the second electrical characteristic parameter, so that the electrical characteristic parameter of the changed three-dimensional structure model is consistent with the second electrical characteristic parameter, thereby simulating the real working state of the SOI FinFET device under the condition of
total dose coupling hot carrier effect. The application can effectively reduce the
device simulation error, provide the accuracy of modeling, provide a model basis for more reliability effect coupling analysis of
device simulation; in addition, the application has better convergence, and is suitable for various
semiconductor devices with complex structures.