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59 results about "Edge function" patented technology

Frequency domain self-adaptive non-linear earthquake imaging filtering method

A frequency domain self-adaptive non-linear earthquake imaging filtering method comprises the steps as follows: firstly, earthquake data are input for calculation and analysis of frequency amplitude spectrum, original earthquake data are subjected to wavelet transformation scale component decomposition with a wavelet basis, components of the earthquake data on different scales are obtained, frequency domain transformation of the earthquake data is performed according to the corresponding relation between the scales and the frequency, single-frequency component earthquake data are extracted from the frequency domain earthquake data subjected to wavelet transformation, the single-frequency component earthquake data in which noise are mainly distributed are subjected to edge function solution of an improved self-adaptive non-linear diffusion equation, finally, all frequency component data can meet the requirement of the maximum signal-to-noise ratio, signal-to-noise ratio quality monitoring is performed on the iterative process of repeated self-adaptive non-linear diffusion filtering, so that the optimal iteration times of filtering is determined, all frequency component earthquake data after repeated iteration filtering are subjected to wavelet reconstruction synthesis, and the final earthquake data after imaging filtering are obtained.
Owner:SOUTHWEST PETROLEUM UNIV

Magic cube type eight-foot metamorphic robot

ActiveCN108583718ADegrees of freedom achievedAchieve freedomVehiclesMetamorphic robotsRelative motion
The invention belongs to the technical field of robots, and relates to a magic cube type eight-foot metamorphic robot. The magic cube type eight-foot metamorphic robot comprises a spherical outer body, a center inner body and walking execution supporting legs. The spherical outer body comprises six axis driving assemblies, twelve seamed edge function assemblies and eight vertex angle branch assemblies, the axis driving assemblies, the seamed edge function assemblies and the vertex angle branch assemblies are interlocked to form a space six-circle orthogonal bearing inside the spherical outer body in an inlay mode, and the spherical outer body realizes own relative motion reconstruction by means of the space six-circle orthogonal bearing. Visual devices are arrange on the outer surfaces ofthe axis driving assemblies, motors are arranged in the axis driving assemblies, control devices and communication devices are arranged on the outer surfaces of the seamed edge function assemblies, and supporting leg connecting ends used for connecting the walking execution supporting legs are arranged on the outer surfaces of the vertex angle branch assemblies. The spherical outer body covers theexterior of the center inner body, the spherical outer body can be rotatably connected with the center inner body through the axis driving assemblies, and a battery is arranged in the center inner body.
Owner:YANSHAN UNIV

Ga2O3 material-based cap layer composite double-gate P-type metal-oxide-semiconductor field-effect transistor (PMOSFET) and preparation method thereof

The invention relates to a Ga2O3 material-based cap layer composite double-gate P-type metal-oxide-semiconductor field-effect transistor (PMOSFET) and a preparation method thereof. The method comprises the steps of selecting an N-type semi-insulation substrate, growing an N-type Beta-Ga2O3 layer by molecular beam epitaxy, and forming a table surface by dry etching; forming a source region and a drain region at two side positions of the table surface by an ion injection process; forming a source electrode and a drain electrode at two side positions near to the source region and the drain region; forming a first gate dielectric layer and a second gate dielectric layer at inclined surface positions of the other two sides, near to a source region side, of the table surface by a magnetron sputtering process; forming cap layers on surfaces of the first gate dielectric layer and the second gate dielectric layer; and forming gate electrodes on surfaces of the cap layers. Two materials with different dielectric constants are used as composite gate oxide layers to transmit holes and block electrons so as to improve the transmission efficiency; and the relatively thin cap layers are used, a dipole layer is formed at a gate oxide layer/Ga2O3 interface by a high-temperature process, thus, the adjustment of a band edge function is achieved, and the device reliability is improved.
Owner:XIDIAN UNIV

Lateral load action-considered longitudinal multi-span instability load-end shrink curve determination method.

The invention relates to the field of ship structure design, and discloses a lateral load action-considered longitudinal multi-span unstable load-end shrink curve determination method. The method comprises the following steps of: establishing a theoretical model which considers the influences of lateral migration, of a crossbeam or ribbed plate (hereinafter uniformly referred to as crossbeam), caused by overall deformation of a grillage, and longitudinal multi-span instability due to actions of bearing longitudinal axial force and lateral pressure; obtaining longitudinal additional eccentricity caused by lateral migration of the crossbeam through solving a differential equation; giving an extreme load calculation formula which considers longitudinal multi-span instability caused by lateral load action; and obtaining a longitudinal multi-span instability load-end shrink curve formula which considers the lateral load action through an edge function and plastically-corrected extreme load of longitudinal multi-span instability. The method can be used for expanding the existing Smith method for ship beam extreme load calculation, determining the double-bottom effect of ship beam extreme load and improving the precision and speed of ship beam ultimate bending moment calculation.
Owner:708TH RES INST OF CSSC
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