The embodiment of the invention relates to the technical field of packaging
interconnection reliability analysis, and provides a construction method and device for an electro-thermal migration effect circuit model of an
interconnection line, and the method comprises the steps: converting an electro-thermal migration effect into a circuit parameter change based on a Korhonen
control equation and boundary conditions, capturing the significant influence of temperature and
temperature gradient on atom migration, and carrying out the analysis of the reliability of the
interconnection line. According to the method, an
equivalent circuit model of the interconnection line under the electro-thermal migration effect is deduced, a circuit matrix equation corresponding to the
equivalent circuit model is determined by using an improved node
analysis method, dimension reduction
processing is performed on the circuit matrix equation, and an electro-thermal migration effect circuit model of the interconnection line is obtained, so that the
system dimension is effectively compressed; therefore, the calculation complexity is effectively reduced, the solving efficiency is remarkably improved, the stress evolution in the complex multi-
branch interconnection line can be rapidly analyzed, meanwhile, the cavity length evolution is dynamically simulated, and the precision requirement and the efficiency requirement are both considered.