The present invention discloses a method for controlling the risk of over-
etching of the back hole during double-sided
overlay accuracy alignment and protection, and the present invention relates to the technical field of
lithography overlay. The method includes the following steps: First, form the first layer of
overlay pattern and alignment marks on the front side of the
wafer, and establish a front-side coordinate
system; calculate the local and global offset errors by overlaying the coordinate information of the two
layers of front-side overlay patterns, determine the comprehensive front-side overlay error, and correct the front-side alignment
system. Subsequently, flip the
wafer, process the back-side overlay pattern in the same way as the front-side alignment, correct the back-side alignment
system, and complete the double-sided error correction. Finally, by extracting surface characteristic parameters including the
photoresist thickness distribution factor and the edge
roughness factor, correct the
lithography depth to obtain an accurate value, realize the precise control of the
lithography depth, reduce the risk of over-
etching of the back hole of the
wafer, and significantly improve the yield of the equipment and the performance stability of the product.