The invention provides a gate drive circuit capable of enhancing circuit drive ability. The gate drive circuit capable of enhancing the circuit drive ability comprises nine transistors from a first one to a ninth one, wherein a control end of the first transistor is connected with an n-1th level gate drive signal, a second end of the first transistor is electrically connected with first control voltage, a control end of the second transistor is connected with an n+1th level gate drive signal, a first end of the second transistor is connected with second control voltage, a control end of the third transistor is connected with a first clock pulse signal, a second end of the third transistor is connected with a first direct current source, a control end of the forth transistor is connected with a second clock pulse signal, and a first end of the forth transistor is coupled with a second direct current source. Compared with the prior art, the forth transistor is arranged on the gate drive circuit capable of enhancing the circuit drive ability so as to avoid voltage reduction caused by stray capacitance, and furthermore the second direct current source can restrain leakage currents in the transistors, and duration of high potential of nodes is prolonged. Accordingly, large capacitance in the gate drive circuit capable of enhancing the circuit drive ability can be omitted, and the size of a board arrangement space occupied by the gate drive circuit capable of enhancing the circuit drive ability is reduced.