The invention provides a method for rapidly growing metal single atoms on a carbon-based carrier by using microwave to induce metal to discharge and application of a metal monatomic carbon-based material prepared by the method. Firstly, the surface of an electric discharge carrying container is coated with a carrier coating containing a carbon-based material, and then metal wires to grow the metalsingle atoms are placed into the electric discharge carrying container; the electric discharge carrying container is placed in a microwave generation system and is subjected to microwave treatment inan inert gas such as argon for 10-120 seconds; in the process, the microwave induces the metal wires to discharge to emit electrons, the inert gas medium is stimulated to generate high-energy plasmato act on the surfaces of the metal wires, and the metal single atoms grow and deposit on the surface of the carrier coating after the metal single atoms are induced from the metal wires and sputter out; and finally, the carrier coating is scraped out, cleaned and dried to obtain the carbon-based material loaded with the metal atoms. According to the method for rapidly growing the metal single atoms on the carbon-based carrier by using the microwave to induce the metal to discharge and the application of the metal monatomic carbon-based material prepared by the method, the method is simple, rapid and low in cost, the loading capacity of the metal single atoms is high, the metal single atoms are not prone to agglomeration, and the prepared metal monatomic carbon-based material has perfect electro-catalytic property.