31results about How to "Manufacturing process is complex" patented technology

A method of forming an article from an alpha-beta titanium including, in weight percentages, from about 2.9 to about 5.0 aluminum, from about 2.0 to about 3.0 vanadium, from about 0.4 to about 2.0 iron, from about 0.2 to about 0.3 oxygen, from about 0.005 to about 0.3 carbon, from about 0.001 to about 0.02 nitrogen, and less than about 0.5 of other elements. The method comprises cold working the alpha-beta titanium alloy.

A semiconductor integrated circuit device includes: a switching current observer for observing a switching current; a leakage current observer for observing a leakage current; a comparator which compares the switching current and the leakage current with each other; a threshold voltage controller for controlling a substrate bias voltage in order to make a ratio of the switching current and the leakage current constant; a delay observer for observing a delay amount; and a power supply voltage controller for controlling a power supply voltage in order to keep the delay amount in a predetermined range. In the semiconductor integrated circuit device, a process which enables the minimization of an operation power is carried out by controlling the threshold voltage to make the ratio of the switching current and the leakage current constant at a given clock frequency and controlling the power supply voltage to guarantee the operating speed.

A semiconductor integrated circuit device includes: a switching current observer for observing a switching current; a leakage current observer for observing a leakage current; a comparator which compares the switching current and the leakage current with each other; a threshold voltage controller for controlling a substrate bias voltage in order to make a ratio of the switching current and the leakage current constant; a delay observer for observing a delay amount; and a power supply voltage controller for controlling a power supply voltage in order to keep the delay amount in a predetermined range. In the semiconductor integrated circuit device, a process which enables the minimization of an operation power is carried out by controlling the threshold voltage to make the ratio of the switching current and the leakage current constant at a given clock frequency and controlling the power supply voltage to guarantee the operating speed.

This invention provides an array substrate, a method for fabricating the same, and an OLED display device, which can solve the technical problem that the existing OLED display device has low luminous efficiency. Each pixel unit of the array substrate comprises: a TFT drive layer; an OLED further away from the substrate than the TFT drive layer and driven by it, the OLED sequentially comprises a first electrode, a light emitting layer, and a transparent second electrode, wherein the first electrode is a reflection layer, or the first electrode is transparent and has a reflection layer disposed thereunder; a transflective layer further away from the substrate than the OLED and forming a microcavity structure with the reflection layer; and a color filter film disposed between the OLED and the transflective layer and located in the microcavity structure. The present invention is particularly suitable for a WOLED display device.

A droplet ejecting head includes a first substrate, a nozzle plate, a second substrate, an annular symmetrically channel plate and an actuator device. The nozzle plate with a nozzle is disposed on a first surface of the first substrate. The second substrate with a liquid inlet is disposed over the first substrate. The annular symmetrically channel plate with a fluid channel is disposed between the first substrate and the second substrate so that a pressure chamber is formed between the second substrate and the annular symmetrically channel plate. The liquid to be ejected flows to the fluid channel from the liquid inlet and overflows to the pressure chamber from the fluid channel. The actuator device is disposed on the second substrate. The second substrate is deformed by the actuator device for changing volume of the pressure chamber, and then the liquid in the pressure chamber is ejected via the nozzle.

The method for fabricating the semiconductor device includes the steps of: forming an insulating film 20, a conductive film 22 and an insulating film 24 over a semiconductor substrate 10 having a first to a third region; removing an insulating film 24, the conductive film 22 and an insulating film 20 formed in the second region and the third region; forming an insulating film 38 in the second region and the third region; removing the insulating film 24 in the first region and the insulating film 38 in the third region; forming an insulating film 44 in the third region; after a conductive film 52 has been formed, patterning the conductive films 22, 52 in the first region to form a gate electrode 58; and patterning the conductive film 52 to form gate electrodes 62 in the second region and the third region while removing the conductive film 52 over the gate electrode 58.

This invention provides an array substrate, a method for fabricating the same, and an OLED display device, which can solve the technical problem that the existing OLED display device has low luminous efficiency. Each pixel unit of the array substrate comprises: a TFT drive layer; an OLED further away from the substrate than the TFT drive layer and driven by it, the OLED sequentially comprises a first electrode, a light emitting layer, and a transparent second electrode, wherein the first electrode is a reflection layer, or the first electrode is transparent and has a reflection layer disposed thereunder; a transflective layer further away from the substrate than the OLED and forming a microcavity structure with the reflection layer; and a color filter film disposed between the OLED and the transflective layer and located in the microcavity structure. The present invention is particularly suitable for a WOLED display device.

A carrying structure of electronic components is proposed. The carrying structure includes at least one supporting board with at least one cavity disposed thereon, at least one adhesive layer formed on the supporting board, and at least one electronic component having an active face and a non-active face located in the cavity. The gap between the cavity and the electronic component is filled with a portion of the adhesive layer, and thus the electronic component is fixed in the cavity of the supporting board.

Disclosed is a touch window including a substrate, and an electrode part provided on the substrate to detect a position. The electrode part includes a base including an electrode.

A NAND flash memory includes a plurality of NAND flash memory structures separated by an insulating layer. In one embodiment of the present disclosure, the NAND flash memory structure includes a first bitline extending along a first direction, a first charge-trapping region positioned over the first bitline, a wordline positioned over the first charge-trapping region and extending along a second direction, a second charge-trapping region positioned over the wordline, and a second bitline positioned over the second charge-trapping region, wherein the first charge-trapping region and the second charge-trapping region are stacked along a third direction substantially perpendicular to the first direction and the second direction.

This invention provides an array substrate, a method for fabricating the same, and an OLED display device. Each pixel unit of the array substrate comprises: a TFT drive layer; an OLED further away from the substrate than the TFT drive layer and driven by it, the OLED sequentially comprises a first electrode, a light emitting layer, a second electrode, wherein the first electrode is transparent, and the second electrode is a transflective layer, or the second electrode is transparent and has a transflective layer disposed thereon; a reflection layer disposed between the TFT drive layer and the OLED and forming a microcavity structure with the transflective layer, and a reflective surface of the reflection layer has a concave-convex or corrugated structure disposed thereon for causing diffuse reflection of light; and a color filter film disposed between the reflection layer and the OLED and located in the microcavity structure.

A high-speed wavelength channel selector has properties of relatively easy manufacturing and easy extension to multi-channel integration, and a high-speed space and wavelength multiplexed channel selector uses the high-speed wavelength channel selector. The high-speed wavelength channel selector is integrated with electro-optic waveguide switches of non-crystalline materials, such as electro-optic polymers or glasses, in the middle of a pair of wavelength multiplexer and demultiplexer and the high-speed space and wavelength multiplexed channel selector has the photonic integrated circuit-type composition of a space multiplexed channel selector containing M electro-optic waveguide switches and an M×1 channel combiner, the high-speed wavelength channel selector, optical amplifier and a high-speed wavelength converter.

A motor includes a base plate, a stator, a rotor, a circuit board and a Hall element. The stator is disposed on the base plate. The rotor is disposed around the stator, and includes a rotating shaft and a magnetic assembly. The rotating shaft is extended to a center part of the stator. The magnetic assembly includes plural magnets. The circuit board is arranged between the stator and the base plate and comprises a Hall element. A first gap and a second gap are arranged between every two adjacent magnets. The first gap is in the vicinity of the Hall element, and opposed to the second gap. The distance of a vacant portion of the first gap is shorter than the distance of the second gap, thereby facilitating continuous and steady magnetic induction between the Hall element and the magnetic assembly.

An organic light-emitting diode includes an anode on a substrate; a first hole transporting layer on the anode; a second hole transporting layer on the first hole transporting layer and corresponding to the red and green pixel areas; a first emitting material pattern of a first thickness on the second hole transporting layer and corresponding to the red pixel area; a second emitting material pattern of a second thickness on the second hole transporting layer and corresponding to the green pixel area; a third emitting material pattern of a third thickness on the first hole transporting layer and corresponding to the blue pixel area; an electron transporting layer on the first, second and third emitting material patterns; and a cathode on the electron transporting layer, wherein the second thickness is less than the first thickness and greater than the third thickness.

A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.

A droplet ejecting head includes a first substrate, a nozzle plate, a second substrate, an annular symmetrically channel plate and an actuator device. The nozzle plate with a nozzle is disposed on a first surface of the first substrate. The second substrate with a liquid inlet is disposed over the first substrate. The annular symmetrically channel plate with a fluid channel is disposed between the first substrate and the second substrate so that a pressure chamber is formed between the second substrate and the annular symmetrically channel plate. The liquid to be ejected flows to the fluid channel from the liquid inlet and overflows to the pressure chamber from the fluid channel. The actuator device is disposed on the second substrate. The second substrate is deformed by the actuator device for changing volume of the pressure chamber, and then the liquid in the pressure chamber is ejected via the nozzle.

A facial expression control device is provided. The facial expression control device of the present invention provides multiple structures and links, wherein the links are connected to the linking assembly; therefore varies facial expressions are expressed according to the combination of the structures and links. In this way, the facial expression is changed by means of the least actuators under the condition of maintaining the number of facial expression and imitation.

An integrated optical transducer for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die having a MEMS diaphragm with a first side exposed to the dynamic pressure changes and a second side. The transducer further comprises an application specific integrated circuit, ASIC, die having an evaluation circuit configured to detect a deflection of the MEMS diaphragm, in particular of the second side of the MEMS diaphragm. The MEMS die is arranged with respect to the ASIC die such that a gap with a gap height is formed between the second side of the diaphragm and a first surface of the ASIC die and the MEMS diaphragm, the ASIC die and a suspension structure of the MEMS die delineate a back volume of the integrated optical transducer.

An optical disc of a thicker supporting section and a thinner recording section is characterized by: a reinforcement section of a predetermined width which overlaps a supporting section and a recording section. With the reinforcement section, the structure of the optical disc is strengthened, and the resonant frequency of the optical disc is raised, so that the vibration of the optical disc is suppressed and the disc is suitable for high speed (16× up) reading / writing. The optical disc comprises: a circular opening disposed in the center of the optical disc; an annular recording section; an annular supporting section disposed between the annular recording section and the circular opening, wherein the annular supporting section is thicker than the annular recording section; and an annular reinforcement section which is disposed on one of the two sides of the optical disc and overlaps the annular supporting section and the annular recording section.

The disclosed subject matter provides a Fin-FET with a thinned-down InP layer and thinning-down method thereof. In a Fin-FET, the fin structure is made of InGaAs and an InP layer is formed to cover the fin structure. The InP layer is obtained from an initial InP layer formed on the fin structure through a thinning down process including converting a surface portion of the InP layer into a Phosphorus-rich layer and removing the Phosphorus-rich layer. The thickness of the ultimately-formed InP layer is less than or equal to 1 nm. According to the disclosed method, the InP layer in the Fin-FET may be easily thinned down, and during the thinning-down process, contamination may be avoided.

An optical disc of a thicker supporting section and a thinner recording section is characterized by: a reinforcement section of a predetermined width which overlaps a supporting section and a recording section. With the reinforcement section, the structure of the optical disc is strengthened, and the resonant frequency of the optical disc is raised, so that the vibration of the optical disc is suppressed and the disc is suitable for high speed (16× up) reading / writing. The optical disc comprises: a circular opening disposed in the center of the optical disc; an annular recording section; an annular supporting section disposed between the annular recording section and the circular opening, wherein the annular supporting section is thicker than the annular recording section; and an annular reinforcement section which is disposed on one of the two sides of the optical disc and overlaps the annular supporting section and the annular recording section.

The present invention provides a semiconductor structure and a method for manufacturing the same. The method comprises the following steps: providing a substrate and forming a sacrificial gate, sidewall spacers and source / drain regions located on both sides of the sacrificial gate; forming an interlayer dielectric layer that covers the device; removing the sacrificial gate to form a cavity within the sidewall spacers; forming first oxygen absorbing layers in the cavity; forming a second oxygen absorbing layer in the remaining of the space of the cavity; and performing an annealing step to make the surface of the substrate form an interfacial layer. The present invention further provides a semiconductor structure. By forming a symmetrical interfacial layer in a channel region, the present invention has reduced processing difficulty while effectively mitigating short-channel effects and preserving carrier mobility.

An integrated optical transducer for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die having a MEMS diaphragm with a first side exposed to the dynamic pressure changes and a second side. The transducer further comprises an application specific integrated circuit, ASIC, die having an evaluation circuit configured to detect a deflection of the MEMS diaphragm, in particular of the second side of the MEMS diaphragm. The MEMS die is arranged with respect to the ASIC die such that a gap with a gap height is formed between the second side of the diaphragm and a first surface of the ASIC die and the MEMS diaphragm, the ASIC die and a suspension structure of the MEMS die delineate a back volume of the integrated optical transducer.

A non-volatile memory device includes first wiring structures elongated in a first direction and separated by a first gap region in a second direction, the first gap region comprising first dielectric material formed in a first process, second wiring structures elongated in a second direction and separated by a second gap region in a first direction, the second gap region comprising second dielectric material formed in a second process, and a resistive switching devices comprising active conductive material, resistive switching material, and a junction material, wherein resistive switching devices are formed at intersections of the first wiring structures and the second wiring structures, wherein the junction material comprising p+ polysilicon material overlying the first wiring material, wherein some resistive switching devices are separated by the first gap region and some resistive switching devices separated by the second gap region.

A motor includes a base plate, a stator, a rotor, a circuit board and a Hall element. The stator is disposed on the base plate. The rotor is disposed around the stator, and includes a rotating shaft and a magnetic assembly. The rotating shaft is extended to a center part of the stator. The magnetic assembly includes plural magnets. The circuit board is arranged between the stator and the base plate and comprises a Hall element. A first gap and a second gap are arranged between every two adjacent magnets. The first gap is in the vicinity of the Hall element, and opposed to the second gap. The distance of a vacant portion of the first gap is shorter than the distance of the second gap, thereby facilitating continuous and steady magnetic induction between the Hall element and the magnetic assembly.

A non-volatile memory device includes first wiring structures elongated in a first direction and separated by a first gap region in a second direction, the first gap region comprising first dielectric material formed in a first process, second wiring structures elongated in a second direction and separated by a second gap region in a first direction, the second gap region comprising second dielectric material formed in a second process, and a resistive switching devices comprising active conductive material, resistive switching material, and a junction material, wherein resistive switching devices are formed at intersections of the first wiring structures and the second wiring structures, wherein the junction material comprising p+ polysilicon material overlying the first wiring material, wherein some resistive switching devices are separated by the first gap region and some resistive switching devices separated by the second gap region.