33results about How to "Reliability issue" patented technology

An array of SRAM cells (e.g., 6T single-ended or 8T differential cells) and method is discussed having variable high and low voltage power supplies to provide to selected cells of the array a write bias condition during a write operation and a read bias condition to the array during a read operation, wherein the read bias condition is different from the write bias condition.

Systems and method for operating and monitoring refrigerators are described. Temperature cycles within the compartment are characterized using statistical, frequency and pattern analysis techniques to derive a steady-state characteristic of temperature within the compartment. A thermal sensor inside the conditioned area is monitored and temperature data sets can be analyzed to determine performance in comparison to a baseline, and energy consumption. Analysis of continuous temperature readings taken from individual or groups of freezers identifies patterns of variations in temperature cycles from which feedback on efficiency can be inferred. Electrical load can be determined by measuring or estimating current usage and identifying periods of time when compressors are active in the refrigerator.

A method and system is provided for splitting a print job into its preamble and at least one chunk. The splitter maintains a collection of RIP node addresses to which chunks of the job currently being split have already been sent. When a new chunk is about to be sent, the splitter checks whether each RIP node address has already received a chunk. If the RIP node has not already received a chunk, the splitter sends the preamble as well as the chunk to an available RIP associated with the RIP node. If, however, the RIP node address has already received a chunk, only the portion of the chunk after the preamble is sent to an available RIP associated with the RIP node and communicate the location of the preamble to the available RIP node. The preamble may contain common content for each job.

The present invention discloses a charge pump circuit suitable for a low-voltage process. The charge pump circuit is composed of stages of the voltage amplifying circuits connected each other, and the operation of two adjacent stages of voltage amplifying circuit is controlled by two opposite set of the timing signals. Each stage of the voltage amplifying circuit has a coupled pair of a first complementary MOS (CMOS) transistor and a second CMOS transistor switching in accordance with a timing signal and an inverse timing signal inputted into the first and second capacitors. Then, two diode devices guide charges to next stage, and a voltage higher than the integrated circuit voltage source is outputted. The present invention has advantage of high pumping gain, and the reliability issue of the gate oxide layer in the low-voltage process can be also solved.

A high-voltage tolerant power-rail ESD clamp circuit is proposed, in which circuit devices can safely operate under the high power supply voltage that is three times larger than their process limitation without gate-oxide reliability issue. Moreover, an ESD detection circuit is used to effectively improve the whole ESD protection function by substrate-triggered technique. Because only low voltage (1*VDD) devices are used to achieve the object of high voltage (3*VDD) tolerance, the proposed design provides a cost effective power-rail ESD protection solution to chips with mixed-voltage interfaces.

The invention relates to an electrostatic discharge protecting circuit with ultra-low standby leakage current for twice supply voltage tolerance. The electrostatic discharge protecting circuit of the invention includes a substrate driver, a third transistor, a start-up circuit, a RC circuit and a second resistor. The substrate driver has a first transistor and a second transistor in serious connection. The start-up circuit has a fourth transistor and a fifth transistor with diode-connected. The RC circuit has a first resistor, a sixth transistor and a seventh transistor in serious connection. Compared with the prior art, the electrostatic discharge protecting circuit with ultra-low standby leakage current for twice supply voltage tolerance of the invention with advantages of low standby leakage current, high ESD robustness, and no gate-oxide reliability issue is an excellent circuit solution for on-chip ESD protection design for mixed-voltage I/O buffers in nanometer CMOS technologies.

A semiconductor device structure has a semiconductor die that has a bond pad with a passivation layer surrounding a portion of the bond pad. A nickel layer, which is deposited, is on the inner portion. A space is between a sidewall of the nickel layer and the passivation layer and extends to the bond pad. A palladium layer is over the nickel layer and fills the space. The space is initially quite small but is widened by an isotropic etch so that when the palladium layer is deposited, the space is sufficiently large so that the deposition of palladium is able to fill the space. Filling the space results in a structure in which the palladium contacts the nickel layer, the passivation layer and the bond pad.

A system to reduce or eliminate brake actuator contamination by providing a clean air source for the actuator such that a volume of a void in the actuator can vary without introducing moisture and/or contaminants into the actuator. A movable wall moves in response to changes in the volume of the void of the actuator to compensate for the changes without drawing moisture or contaminants into the actuator housing. By reducing or eliminating actuator contamination the service life of the actuator can be extended.

A method and system of compensating for imbalance in a data storage disc stack during assembly of the data storage device. The method introduces an optical measurement system downstream of the disc clamp installation operation. The system measures multiple parameters of a most recent N incoming disc-stacks produced on the assembly line, where N is a suitable sample size, such as 30 disc stacks. The measured parameters can comprise disc clamp offset, clamp offset angle, and ring outer diameter. After measuring parameters for a suitable sample size N, the optical system calculates a dynamic or moving average of the most recent N disc stack component offsets and/or offset angles. The calculated averages are then utilized to determine a component configuration type that will compensate for the disc stack imbalance according to the offset trend. The system then feeds back the clamp configuration type to a clamp installation operation where the configuration type is installed during assembly of the next disc stack.

Disclosed is a technology for extracting issue information having high interests to users by recognizing contents of a sentence within media (including news, Tweet, and a blog), and automatically detecting and presenting an issue subject related to the issue information. A method of providing issue information according to the present invention includes: extracting an issue by extracting issue information according to a predetermined condition or a condition received from the outside by using data expressed with a text on media or meta data defining additional information on the data; and displaying an issue history or hotness of the extracted issue information which has been issued in the media to a user.

A composite material implements self-healing microcapsules in thermoplastic matrices, such as polyethylene. A microencapsulated dicyclopentadiene monomer and a solid phase Grubbs's catalyst is embedded in a polyethylene matrix to achieve self-healing properties. Nanofillers may be added to improve the properties of the polyethylene matrix incorporating a self-healing system.

A support connector for maintaining an end of a linear LED lamp in an operative state on a support. The support connector comprises a nonconductive housing comprising a first portion including a mounting base at one end of the first portion configured to couple the support connector to the support. A second portion extends from the opposite end of the first portion and is configured to be insertable within an opening of a first end cap assembly of the linear LED lamp. First and second power electrical terminals are disposed within first and second receptacles of the support connector, and a grounding electrical terminal is disposed within a third receptacle, and the grounding electrical terminal is electrically isolated from the first and second power terminals. The first and second power electrical terminals mate with first and second conductive power pins of the end cap assembly, and the grounding electrical terminal is configured to mate with a grounding pin of the end cap assembly as the first end cap assembly is moved relative to the support connector from a position fully separated from the support connector in a path that is transverse to the length of the body into an engaged position.

A new structure is disclosed for semiconductor devices in which contact regions are self-aligned to conductive lines. Openings to a gate oxide layer, in partially fabricated devices on a silicon substrate, have insulating sidewalls. First polysilicon lines disposed against the insulating sidewalls extend from below the top of the openings to the gate oxide layer. Oxide layers are grown over the top and exposed sides of the first polysilicon lines serving to insulate the first polysilicon lines. Polysilicon contact regions are disposed directly over and connect to silicon substrate regions through openings in the gate oxide layer and fill the available volume of the openings. Second polysilicon lines connect to the contact regions and are disposed over the oxide layers grown on the first polysilicon lines.