The invention discloses a monolithic integration device for a tera-
hertz time domain spectral
system and a preparation method. Through a stripping transfer and bonding technique of a low-temperature GaAs film, the production and the reception of tera-
hertz are integrated into the same substrate, so that the monolithic integration device has the characteristics of being small in size, light in weight, low in cost and convenient to operate. The device structurally comprises a photoconduction antenna, a
metal waveguide and a base, wherein the photoconduction antenna consists of
metal electrodes and a low-temperature GaAs film; the
metal waveguide is a
microstrip line for transmitting the tera-
hertz; the base consists of BCB media, an Au metal backing plate and a
silicon base. Through the adoption of the monolithic integration device and the preparation method thereof disclosed by the invention, the problem of high space occupation of a conventional tera-hertz
time domain spectral
system is solved, and all parts of the
system are integrated to the same substrate; besides, in the measuring process, only a few number of samples are needed to obtain corresponding information; on the other hand, tera-hertz collimation adjustment before sample measurement is reduced, so that sample measuring steps are more succinct.