200 results about "Wavelength converters" patented technology

A method of manufacturing a light emitting device package and a method of manufacturing a display panel, the method of manufacturing a light emitting device package including forming a semiconductor laminate on a substrate such that the semiconductor laminate has a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; separating the semiconductor laminate into semiconductor light emitters, separated from each other, by forming a trench having a predetermined depth in the substrate by etching through the semiconductor laminate in a direction of the first surface of the substrate; forming a molding that fills the trench and insulates the semiconductor light emitters from each other by applying a flexible insulating material to cover the semiconductor light emitters; forming grooves separated from each other by the molding and overlying to the semiconductor light emitters, respectively, by removing the substrate; and forming wavelength converters in the grooves.

A bi-directional optical communication system employing a minimum number of single-mode high repetition rate pulsed optical signal sources to achieve cost efficiency while maintaining high data rates. The bi-directional optical communication system includes a first optical data processing unit and a second optical data processing unit. The first optical data processing unit modulates a pulsed optical source using a differential quadrature phase shift keying (DQPSK) modulation and two-level pulse amplitude (PAM-2) modulation and then demodulates it to achieve a pulse amplitude modulated signal. The second optical data processing unit reuses the same optical carrier by passing it through a regenerative wavelength converter to generate three pulsed optical carriers at different wavelengths and employs an On-off keying (OOK) modulation scheme. These carriers are employed to send uplink data at a same rate of as the downlink. As a result, large data is transmitted from one data center to another data center through a downlink and uplink free space optical link network.

A WXC device includes: input ports; output ports; a wavelength conversion unit including input-side WSSes, wavelength converters, and output-side WSSes; and a controller. The input-side WSSes each output an optical signal input from a corresponding one of the input ports to a selected one of the wavelength converters. The wavelength converters each convert a wavelength band of the optical signal input from each of the input-side WSSes into another wavelength band and output the converted optical signal to a respective one of the output-side WSSes. The output-side WSSes each perform route switching on the optical signal input from the respective one of the wavelength converters toward a selected one of the output ports. The controller manages, for each of the wavelength converters, whether the wavelength converter is unused and controls the input-side WSSes each to output the input optical signal to one of the unused wavelength converters.

An LED includes first / second doped layers with active region(s) therebetween emitting a first wavelength. A wavelength converter on a first LED surface absorbs the first wavelength and emits a second, longer wavelength. A second LED surface is against a substrate surface. A first electrical contact on the first LED surface extends along LED sidewalls, separated from the active region(s) and second doped layer by an insulating layer, connecting the first doped layer to a first contact pad. In some instances, contact pads are on the substrate surface; a second electrical contact extends onto LED sidewalls, connecting the second doped layer to a second contact pad. In some other instances contact pads are on laterally-extending portions of the second doped layer. The insulating layer separates the first contact pad from the second doped layer; a second contact pad is in direct electrical contact with the second doped layer.

A display apparatus includes a circuit substrate with driving circuits and first bonding electrodes, and a pixel array having LED cells, each of the LED cells including first and second conductivity-type semiconductor layers with an active layer therebetween, second bonding electrodes on the first bonding electrodes, wavelength converters on the LED cells, an upper semiconductor layer on the LED cells and having a partition structure surrounding side snakes of the wavelength converters and separating the wavelength converters, a first reflective electrode on the side surfaces of the LED cells, spaced from the LED cells by a passivation layer, and extending between the LED cells, second reflective electrodes on the lower surfaces of the LED cells and connected to the second conductivity-type semiconductor layers, a common electrode on at least one side of the LED cells, and a pad electrode outside the LED cells and electrically connected to the driving circuits.

A light-emitting device includes a transparent substrate less than 60 μm thick, a semiconductor diode structure on one surface of the substrate, and a wavelength-converting layer less than 50 μm thick on the other surface and the sidewalls of the substrate. The wavelength-converting layer includes luminescent particles having D50 less than 20 μm that are bound together or to the substrate by an inorganic coating medium less than 700 nm thick that is index-matched with the substrate. inorganic binder, optical sidewall coating, and an optical sidewall structure. The luminescent particles absorb light emitted by the semiconductor diode structure at a first wavelength and emit light at a second, longer wavelength.

An LED includes first / second doped layers with active region(s) therebetween emitting a first wavelength, and is arranged in a vertical die geometry with a reflective first electrical contact on a first LED surface. A wavelength converter absorbs the first wavelength and emits a second, longer wavelength. Some examples include a transparent second electrical contact on a second LED surface or angled LED sidewalls, and the wavelength converter is on the LED surface and the angled LED sidewalls. Some other examples include a second electrode on LED side surfaces extending beyond a second LED surface to form a cavity, with the wavelength converter on the second LED surface at least partly filling the cavity.

The invention relates to a device for wavelength conversion of electromagnetic radiation, in particular light, UV and / or infrared radiation, comprising at least one conversion layer comprising a wavelength-converting material and at least one wavelength-selective optical component. The device is characterized in that the wavelength-selective optical component is adapted to the absorption spectrum of at least one semiconductor. The invention also relates to a solar cell comprising the aforementioned device.

A high-power light source based on laser remote fluorescence excitation is characterized by comprising a laser diode module used for generating laser, a light beam shaping module used for shaping laser beams and focusing the laser beams on a fluorescent film, and a fluorescence wavelength converter used for converting the laser into white light. The fluorescence wavelength device sequentially comprises a fluorescent film, a dielectric film, a transparent substrate and a grid type heat conduction membrane; the fluorescent film is located on one side of the transparent substrate, and the grid type heat conduction membrane is located on the other side of the transparent substrate. The heat dissipation performance of the fluorescence conversion module is improved, and the efficiency and reliability of the fluorescence converter are improved. The light source can be applied to the fields of illumination, display, machine vision and the like.

A wavelength converting apparatus includes a base made of one of copper and a copper alloy; a copper oxide layer formed at a first surface of the base; a joining reinforcing layer being a tin oxide layer which contains tin oxide and is layered at the copper oxide layer; a joining layer disposed at the joining reinforcing layer; and a wavelength converter disposed at the joining layer.

A light-emitting diode (LED) die, a wafer of LED dies, and methods of manufacturing at least one LED die are described. The LED die (1000) includes a semiconductor stack configured to emit a pump (blue) light when energized and a wavelength converter over the semiconductor stack. The wavelength converter converts some of the pump light to a converted light having a differing color. The LED die further includes a spatially inhomogeneous dichroic filter (blue DCF 1008) on the wavelength converter. Said filter is configured to at least one of: - increase reflection of the pump light in special regions of peak luminance, - increase reflection of the converted light in spatial regions of low luminance, - increase transmission in at least a portion of the converted light in spatial regions of peak luminance, or - increase transmission of the pump light in spatial regions of low luminance.

A display device is provided. The display device comprises: a first substrate having a first light-emitting region, a second light-emitting region, and a third light-emitting region defined therein, each emitting a first light; a first light-transmitting region facing the first substrate and overlapping with the first light-emitting region, a second light-transmitting region overlapping with the second light-emitting region, and a third light-transmitting region overlapping with the third light-emitting region, and a first surface facing the first substrate and a second surface opposite to the first surface; a first wavelength conversion pattern located on the first surface of the second substrate and overlapping with the first light-transmitting region; and a second wavelength conversion pattern located on the first surface of the second substrate and overlapping with the second light-transmitting region. and includes a light transmission pattern located on the first surface of the second substrate and overlapping with the third light-transmitting region, wherein the first wavelength conversion pattern includes a first base resin, a first wavelength shifter dispersed within the first base resin and converting the wavelength of the first light into the second light, and a first scatterer dispersed within the first base resin, wherein the second wavelength conversion pattern includes a second base resin, a second wavelength shifter dispersed within the second base resin and converting the wavelength of the first light into the third light, and a second scatterer dispersed within the second base resin, wherein the light transmission pattern includes a third base resin and a third scatterer dispersed within the third base resin, wherein the content (Wt(%)) of the second wavelength shifter within the second wavelength shifter measured by Inductively Coupled Plasma Mass Spectrometer (ICP-MS) is 40 to 45, and the first wavelength shifter within the first wavelength shifter The content (Wt(%)) is 35 to 40.

A single-material-double-process parametric laser-wavelength converter includes a pump-laser source, a nonlinear optical material, a first optical reflective element, and a second optical reflective element. The pump-laser source is configured to emit a pump-laser pulse light. The nonlinear optical material receives the pump-laser pulse and generates a signal-laser pulse and a partially depleted pump-laser pulse through optical parametric amplification. The first optical reflective element is configured to reflect the signal-laser pulse back to the same nonlinear optical material. The second optical reflective element is configured to reflect the partially depleted pump-laser pulse back to the same nonlinear optical material. With an appropriate adjustment on the reflecting path lengths, the nonlinear optical material is configured to receive the temporally synchronized signal-laser pulse and the partially depleted pump-laser pulse to generate an idler output through difference frequency generation. Both optical parametric amplification and difference frequency generation occur in the same nonlinear optical material.

Disclosed is a light emitting device. The light emitting device includes: a substrate; a light emitting unit disposed on the substrate; a wavelength converter disposed on the light emitting unit; an optical unit disposed on the wavelength converter; and a barrier disposed on the substrate and covering side surfaces of the light emitting unit, the wavelength converter, and the optical unit. The optical unit includes an optical base and an optical pattern composed of recess-protrusion structures formed on at least one surface of the optical base.

A lighting apparatus is disclosed. The lighting apparatus according to one embodiment of the present disclosure includes: a white light emitting device including at least one first light emitting diode and a wavelength converter to implement white light; and at least one second light emitting diode emitting light suitable for producing a cell activating substance, wherein the first light emitting diode emits light having a central wavelength in a range of about 300 nm to about 420 nm, the second light emitting diode emits light having a central wavelength in a range of about 605 nm to about 935 nm, the wavelength converter includes a plurality of wavelength conversion substances to convert light of the first light emitting diode into white light, the lighting apparatus emits the white light implemented in the white light emitting device and light generated by the second light emitting diode to the outside, and, in irradiance spectrum of the white light implemented in the white light emitting device, irradiance of the central wavelength of light emitted from the first light emitting diode is smaller than that of a peak wavelength of blue light emitted from the wavelength conversion substance.

A light emitting module including a substrate, a first light emitter and a second light emitter disposed on the substrate and spaced apart from each other, an isolation layer disposed between the first and second light emitters, and a light diffusion layer and a wavelength converter disposed on the first and second light emitters, in which the first and second light emitters include first and second light emitting regions spaced apart from each other, respectively, the wavelength converter includes a first wavelength conversion layer covering the second light emitting region, and a second wavelength conversion layer covering the first light emitting region, the light diffusion layer covers an upper surface of the first and second wavelength conversion layers, and a region between the first and second wavelength conversion layers has an area vertically overlapped with the isolation layer.

A wavelength converter material doped with one or more rare earth elements may provide improved temperature sensing precision and / or improved mechanical stability due to reduced structural anisotropy. The converter material may be powder phosphor or ceramic phosphor. The converter material may comprise GdAlO3:Cr in addition to the one or more rare earth elements.

The present application discloses a photodetector and a method for manufacturing the same. The photodetector includes: a first transmission waveguide, a second transmission waveguide, a first coupler, a second coupler, a wavelength converter, and a light detection structure. The first coupler is disposed between the first transmission waveguide and the wavelength converter, and the first coupler can enable optical communication between the first transmission waveguide and the wavelength converter. The wavelength converter is used to convert the wavelength of an optical signal output by the first coupler. The second coupler is disposed between the second transmission waveguide and the wavelength converter, and the second coupler can enable optical communication between the second transmission waveguide and the wavelength converter. The light detection structure is used to detect the optical signal output by the second coupler. The photodetector prepared in the present application converts light in a transparent band for silicon material into light in an opaque band, and then detects the light, thereby improving detection accuracy, avoiding the need to integrate other materials to prepare the detector, reducing the difficulty of the preparation process, and lowering production costs.

Light-emitting device package comprising: a plurality of light-emitting structures (130) spaced apart from one another, each of the plurality of light-emitting structures comprising a first conductivity-type semiconductor layer (131), an active layer (132), a second conductivity-type semiconductor layer (133), a first surface provided by the first conductivity-type semiconductor layer (131), and a second surface provided by the second conductivity-type semiconductor layer (133), wherein the first surface is opposite the second surface; a common first electrode (170N) extending parallel to the first and second surfaces of the plurality of light-emitting structures (130) on a plane distinct from the planes of the first and second surfaces, wherein the common first electrode (170N) connects respective first conductivity-type semiconductor layers (131) of the plurality of light-emitting structures (130) and comprises at least one of tungsten and tungsten silicide; a plurality of second electrodes (141) arranged on the second surfaces of the plurality of light-emitting structures (130) and connected to respective second conductivity-type semiconductor layers (133) of the plurality of light-emitting structures (130); a plurality of wavelength converters (190R, 190G, 190B) arranged on the first surfaces and spaced apart from each other to correspond to the plurality of light-emitting structures (130); and a shaped section (160) covering side surfaces of the plurality of light-emitting structures (130) and side surfaces of the plurality of wavelength transducers (190R, 190G, 190B), wherein the shaped section (160) has a partition structure separating the plurality of wavelength transducers (190R, 190G, 190B) from one another, and having a material having an elastic modulus lower than that of the plurality of light-emitting structures (130), wherein the common first electrode (170N) is aligned on a surface arranged parallel between the first surfaces and the second surfaces, characterized by the fact that the common first electrode has (170N): a plurality of individual electrode sections (170NA) arranged in an area overlapping the plurality of light-emitting structures and connected to the respective first conductivity-type semiconductor layers (131); at least one pad section (170NC) arranged in an area that does not overlap the majority of light-emitting structures (130); and a connecting section (170NB) that connects the majority of individual electrode sections (170NA) together and connects at least one of the majority of individual electrode sections (170NA) to the at least one pad section (170NC), wherein each of the plurality of individual electrode sections (170NA) is arranged to surround a perimeter of an area of ​​a corresponding light-emitting structure (130).

A light-emitting member includes an optical fiber that receives first excitation light and first mixed light. The optical fiber includes a first wavelength converter that emits first fluorescence in response to the first excitation light, and emits second mixed light being a mixture of the first mixed light and the first fluorescence through a side surface. The light-emitting member includes a light-emitting portion that emits the second mixed light outside the light-emitting member. A plurality of component light beams of the first mixed light includes first component light with a first peak wavelength and second component light with a second peak wavelength longer than the first peak wavelength. An absolute value of a difference between a first fluorescence peak wavelength of the first fluorescence and the first peak wavelength is less than an absolute value of a difference between the first fluorescence peak wavelength and the second peak wavelength.

A wavelength converting apparatus includes a base having a first surface; a rotator configured to rotate the base; a wavelength converter disposed at a side facing the first surface of the base and configured to convert incident first light having a first wavelength band into second light having a second wavelength band different from the first wavelength band; and a phase changing medium to which heat of the wavelength converter is transmitted. The base has a recess provided at the first surface of the base at a position corresponding to the wavelength converter. The phase changing medium is encapsulated in the recess, and a phase state of the phase changing medium is a liquid-solid two-phase state at least during a period for which the first light is incident on the wavelength converter.

A light device including a cover, a light emitter including a first end, a second end, and an intermediate region, and a power board, in which the light emitter includes light sources including first and second light sources adjacent to the first end and the second end, respectively, 5 each of the light sources including first and second contact electrodes, first and second electrode pads electrically connected to at least one of the first and second contact electrodes, respectively, a wavelength converter, and a connection line disposed on an insulation layer and electrically connected to the first or second electrode pad that is electrically connected to the light sources, in which a first distance between the first light source and a first region of the cover is different 10 from a second distance between the second light source and a second region of the cover.

To provide a light source device and a projector excellent in light utilization efficiency.SOLUTION: The light source device according to the present disclosure includes the first light source configured to emit the first light beam, the first wavelength conversion element configured to convert the first light beam into the second light beam, the first optical layer configured to transmit the first light beam and reflect the second light beam, the light guide section configured to guide the second light beam, the second wavelength conversion element configured to convert the first light beam into the third light beam, the second optical layer configured to reflect the second light beam and the third light beam, and the first reflecting member. The first wavelength converter has the first surface on which the first light is incident via the first optical layer and the second and third surfaces that intersect the first surface and face away from each other, the first reflection member is disposed in a region of the light guide section that is the region facing the second surface, and the second light and the third light travel through the light guide section and exit via a region of the light guide section that is the region facing the third surface.SELECTED DRAWING: Figure 2

A wavelength converter material doped with one or more rare earth elements may provide improved temperature sensing precision and / or improved mechanical stability due to reduced structural anisotropy. The converter material may be powder phosphor or ceramic phosphor. The converter material may comprise GdAlO3:Cr in addition to the one or more rare earth elements.

The present invention relates to a phosphor powder, which contains a phosphor represented by the following general formula (I). In the general formula (I), M1 contains at least La, and may further contain one or more elements selected from lanthanide elements other than Y and La, M2 contains at least Ba, and may further contain one or more elements selected from Mg, Ca and Sr, x is 0.005 to 0.2, y is 0 to 0.1, and z is greater than 0.44 and less than 0.99. (Eu (1－x)(1－z) M1 x M2 (1－x)z )2(Si 1－y Al y )5N8···(I).

A light-emitting module according to an embodiment comprises: a substrate; a plurality of light-emitting diode chips which are disposed on the substrate; a plurality of wavelength converters which are disposed on the plurality of light-emitting diode chips respectively; and a white wall which surrounds the plurality of light-emitting diode chips and the plurality of wavelength converters, wherein each of the plurality of wavelength converters includes a side surface which is inclined at an inclination angle of 80 degrees or less to the upper surface of the wavelength converter.

A light source apparatus according to the present disclosure includes: a light source configured to output first light; a diffuser that the first light output; an optical element that the first light passing through the diffuser enters; a light collection system that the first light passing through the optical element enters; a wavelength converter configured to convert part of the first light into second light; and a reflection system configured to reflect another part of the first light, wherein the optical element includes a first reflection film configured to reflect the second light, the wavelength converter includes a light incident surface on which the first light is incident, and a second reflection film provided at the light incident surface and configured to separate the first light into the part and the other part, and the other part of the first light separated by the second reflection film enters the diffuser.

Wavelength converter including: a phosphor layer; and a filter layer where the filter layer is attached directly to the phosphor layer, wherein the wavelength converter has a total thickness between 20 µm and 80 µm, wherein the filter layer comprises at least two different metal oxides selected from the group consisting of SiO2, Al2O3, TiO2, Nb2O5, Ta2O5, HfO2 and Y2O3.

A wavelength conversion device includes a base member having a first surface, a wavelength conversion layer disposed at an incident side of first light in a first wavelength band with respect to the base member and configured to convert the first light incident thereon into second light in a second wavelength band different from the first wavelength band, a reflective film disposed between the wavelength conversion layer and the first surface and configured to reflect light incident thereon from the wavelength conversion layer, and a bonding portion disposed between the reflective film and the first surface and configured to bond the reflective film and the base member to each other, wherein the bonding portion contains silver and a movement suppressing substance configured to suppress movement of silver.

A first light source device emits first light having a first wavelength. A second light source device emits second light having a second wavelength longer than the first wavelength. A splitting unit is configured to split the first light into third light having a third wavelength same as the first wavelength and fourth light having a fourth wavelength same as the first wavelength. A wavelength converter is configured to be excited by the third light to emit fifth light having a luminescence peak at a fifth wavelength between the third wavelength and the second wavelength. A combining optical system is configured to combine the second light, the fourth light, and the fifth light together. A control device is configured to control a light output of the second light source device and a split ratio between the third light and the fourth light in the splitting unit.