Light-emitting device
package comprising: a plurality of light-emitting structures (130) spaced apart from one another, each of the plurality of light-emitting structures comprising a first
conductivity-type
semiconductor layer (131), an
active layer (132), a second
conductivity-type
semiconductor layer (133), a first surface provided by the first
conductivity-type
semiconductor layer (131), and a second surface provided by the second conductivity-type semiconductor layer (133), wherein the first surface is opposite the second surface; a common first
electrode (170N) extending parallel to the first and second surfaces of the plurality of light-emitting structures (130) on a plane distinct from the planes of the first and second surfaces, wherein the common first
electrode (170N) connects respective first conductivity-type semiconductor
layers (131) of the plurality of light-emitting structures (130) and comprises at least one of
tungsten and
tungsten silicide; a plurality of second electrodes (141) arranged on the second surfaces of the plurality of light-emitting structures (130) and connected to respective second conductivity-type semiconductor
layers (133) of the plurality of light-emitting structures (130); a plurality of
wavelength converters (190R, 190G, 190B) arranged on the first surfaces and spaced apart from each other to correspond to the plurality of light-emitting structures (130); and a shaped section (160) covering side surfaces of the plurality of light-emitting structures (130) and side surfaces of the plurality of
wavelength transducers (190R, 190G, 190B), wherein the shaped section (160) has a partition structure separating the plurality of
wavelength transducers (190R, 190G, 190B) from one another, and having a material having an
elastic modulus lower than that of the plurality of light-emitting structures (130), wherein the common first
electrode (170N) is aligned on a surface arranged parallel between the first surfaces and the second surfaces, characterized by the fact that the common first electrode has (170N): a plurality of individual electrode sections (170NA) arranged in an area overlapping the plurality of light-emitting structures and connected to the respective first conductivity-type semiconductor
layers (131); at least one pad section (170NC) arranged in an area that does not overlap the majority of light-emitting structures (130); and a connecting section (170NB) that connects the majority of individual electrode sections (170NA) together and connects at least one of the majority of individual electrode sections (170NA) to the at least one pad section (170NC), wherein each of the plurality of individual electrode sections (170NA) is arranged to surround a perimeter of an area of a corresponding light-emitting structure (130).